公开(公告)号：US20080210925A1

公开(公告)日：2008-09-04

申请号：US12122969

申请日：2008-05-19

申请人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

发明人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

IPC分类号： H01L45/00

CPC分类号： H01L45/1226 ,  H01L27/24 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148

摘要： A switching circuit configured for controlling static power consumption in integrated circuits includes a plurality of three-terminal, phase change material (PCM) switching devices connected between a voltage supply terminal and a corresponding sub-block of integrated circuit logic. Each of the PCM switching devices further includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.

摘要翻译： 配置成用于控制集成电路中的静态功耗的开关电路包括连接在电压源端子和集成电路逻辑的对应子块之间的多个三端子相变材料（PCM）开关器件。 每个PCM开关装置还包括设置在第一端子和第二端子之间接触的PCM，在第二端子和第三端子之间接触地设置的加热装置，加热装置位于PCM附近，并且被配置为将 PCM的可变形部分的电导率在较低电阻结晶状态和较高电阻无定形状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。 第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。

公开(公告)号：US07411818B1

公开(公告)日：2008-08-12

申请号：US11672110

申请日：2007-02-07

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

公开(公告)号：US20080142775A1

公开(公告)日：2008-06-19

申请号：US11612631

申请日：2006-12-19

申请人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

发明人： Kuan-Neng Chen ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Albert M. Young

IPC分类号： H01L45/00

CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material.

摘要翻译： 提供了可编程通孔结构以及其制造方法。 本发明可编程通过半导体衬底。 诸如热氧化物的氧化物层位于半导体衬底的表面上。 图案化的加热材料位于氧化物层的表面上。 本发明的结构还包括具有填充有相变材料（PCM）的至少一个通孔的图案化电介质材料。 包括PCM填充通孔的图案化电介质材料位于图案化加热材料的表面上。 图案化扩散阻挡层位于所述至少一个充满相变材料的通孔的暴露表面上。 本发明的结构还包括延伸通过图案化电介质材料的接触孔。 接触通孔填充有也延伸到图案化电介质材料的上表面上的导电材料。 用作器件输入的导电材料位于图案化的扩散阻挡层的顶部，其位于通过相变材料填充的正上方。

公开(公告)号：US20080048169A1

公开(公告)日：2008-02-28

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00 ,  H01L21/76

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US20060249724A1

公开(公告)日：2006-11-09

申请号：US11123086

申请日：2005-05-06

申请人： Lia Krusin-Elbaum ,  Dennis Newns

发明人： Lia Krusin-Elbaum ,  Dennis Newns

IPC分类号： H01L29/02

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148

摘要： A memory cell includes a phase change material (PCM) element that stores an information bit. A heating element external to the PCM element changes the information bit. A cooling element increases the speed of the information bit change.

摘要翻译： 存储单元包括存储信息位的相变材料（PCM）元件。 PCM元件外部的加热元件会更改信息位。 冷却元件增加了信息位变化的速度。

公开(公告)号：US5801444A

公开(公告)日：1998-09-01

申请号：US756829

申请日：1996-11-20

申请人： Mohamed Osama Aboelfotoh ,  Lia Krusin-Elbaum ,  Yuan-Chen Sun

发明人： Mohamed Osama Aboelfotoh ,  Lia Krusin-Elbaum ,  Yuan-Chen Sun

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L23/48

CPC分类号： H01L21/76877 ,  H01L21/2807 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/7685 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/53228 ,  H01L23/53238 ,  H01L29/456 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/4975 ,  H01L2924/0002

摘要： A low temperature annealed Cu silicide or germanide layer on the surface of a single crystalline semiconductor substrate of Si or Ge is used in interconnection metallization for integrated circuits. The Cu silicide or germanide layer is preferably formed by heating Cu deposited on a Si or Ge substrate up to about 200.degree. C. for about 30 minutes. The layer demonstrates superior (near ideal) current/voltage characteristics and can be used as a high temperature (600-800.degree. C.) stable Ohmic/Schottky contact to Si or as a Cu diffusion barrier. Additional embodiments involve a Cu layer on a Ge layer on Si substrate, a Cu layer on a Si.sub.x Ge.sub.1-x layer on a substrate, and the use of an intermediate layer of a refractory metal such as W.

摘要翻译： 在Si或Ge的单晶半导体衬底的表面上的低温退火的Cu硅化物或锗化物层用于集成电路的互连金属化。 Cu硅化物或锗化锗层优选通过将沉积在Si或Ge衬底上的Cu加热至约200℃形成约30分钟。 该层表现出优异的（接近理想的）电流/电压特性，并且可以用作与Si或作为Cu扩散阻挡层的高温（600-800℃）稳定的欧姆/肖特基接触。 另外的实施方案涉及Si衬底上Ge层上的Cu层，衬底上六Ge1-x层上的Cu层，以及使用难熔金属如W的中间层。

公开(公告)号：US5330592A

公开(公告)日：1994-07-19

申请号：US148593

申请日：1993-11-08

申请人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

发明人： Mohamed O. Aboelfotoh ,  Michael J. Brady ,  Lia Krusin-Elbaum

IPC分类号： C22C1/00 ,  C22C9/00 ,  C23C14/06

CPC分类号： C22C9/00 ,  H01L23/53233 ,  H01L2924/0002

摘要： The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

摘要翻译： 本发明涉及在室温下表现出非常低的电阻率的新型化合物。 更具体地，已经发现，将至少1至15原子％的镓和/或至少1至15原子％的金掺入化学计量的锗化锗（Cu 3 Ge）化合物中导致与元素铜相当的室温电阻率， 但在高温下暴露于空气或氧气时具有优异的化学和电子稳定性。 此外，本发明的化合物没有与铜扩散到元素和化合物半导体中的任何问题，这常常导致半导体器件特性的劣化。 另外，本发明涉及一种制备上述前述新颖化合物的方法。

公开(公告)号：US08405279B2

公开(公告)日：2013-03-26

申请号：US13532991

申请日：2012-06-26

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

IPC分类号： H01L21/02

CPC分类号： H01L49/00 ,  H01C10/103

摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

公开(公告)号：US08247947B2

公开(公告)日：2012-08-21

申请号：US12632154

申请日：2009-12-07

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

IPC分类号： H01L41/00

CPC分类号： H01L49/00 ,  H01C10/103

摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

公开(公告)号：US20120153248A1

公开(公告)日：2012-06-21

申请号：US13406096

申请日：2012-02-27

申请人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

发明人： Lia Krusin-Elbaum ,  Dennis M. Newns ,  Matthew R. Wordeman

IPC分类号： H01L45/00

CPC分类号： H01L45/1226 ,  H01L27/24 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148

摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.

摘要翻译： 开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。 每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。 第一个PCM开关器件的第三个端子耦合到一个设置/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到相邻PCM开关器件的第二个端子。