公开(公告)号：US06373870B1

公开(公告)日：2002-04-16

申请号：US09141763

申请日：1998-08-27

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Naoto Kusumoto

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Naoto Kusumoto

IPC分类号： H01S310

CPC分类号： H01L21/02686 ,  B23K26/0738 ,  C30B13/24 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L29/66757

摘要： Laser annealing is performed by irradiating, while scanning, a semiconductor thin-film with laser light. The laser light that is linear on the irradiation surface is moved in its line-width direction and applied non-continuously. The laser light has, in its line-width direction, an energy density profile that assumes a step-like form in which the energy density varies in a step-like manner. In particular, the scanning pitch D and the step widths Ln are so set as to satisfy a relationship Ln≧D.

公开(公告)号：US06335213B1

公开(公告)日：2002-01-01

申请号：US09291279

申请日：1999-04-14

申请人： Hongyong Zhang ,  Naoto Kusumoto

发明人： Hongyong Zhang ,  Naoto Kusumoto

IPC分类号： H01L2100

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1274 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.

公开(公告)号：US06242291B1

公开(公告)日：2001-06-05

申请号：US08987573

申请日：1997-12-11

申请人： Naoto Kusumoto ,  Shunpei Yamazaki ,  Koichiro Tanaka

发明人： Naoto Kusumoto ,  Shunpei Yamazaki ,  Koichiro Tanaka

IPC分类号： H01L2100

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/67115

摘要： In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.

摘要翻译： 为了促进半导体膜的激光退火的效果，在向半导体膜照射激光的气氛中有意地包含水分，在该半导体膜中，在半导体膜的表面上形成有包含水蒸气的温度保持层 可以有效地进行激光照射和激光退火操作。

公开(公告)号：US6166399A

公开(公告)日：2000-12-26

申请号：US233143

申请日：1999-01-19

申请人： Hongyong Zhang ,  Naoto Kusumoto

发明人： Hongyong Zhang ,  Naoto Kusumoto

IPC分类号： H01L21/265 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/148

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1274 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.

摘要翻译： 公开了一种制造硅TFT（薄膜晶体管）的方法。 该方法包括在器件结构完成之后进行的激光照射的结晶步骤。 首先，制造非晶硅TFT。 在每个TFT中，沟道形成区域，源极和漏极区域暴露于从衬底上方或下方照射的激光辐射。 然后，照射激光辐射以结晶并激活沟道形成区域，以及源极和漏极区域。 在器件结构完成之后，控制TFT的各种电气特性。 此外，非晶TFT可以变成多晶硅TFT。

公开(公告)号：US6149984A

公开(公告)日：2000-11-21

申请号：US304808

申请日：1999-05-03

申请人： Shunpei Yamazaki ,  Naoto Kusumoto

发明人： Shunpei Yamazaki ,  Naoto Kusumoto

IPC分类号： C23C16/44 ,  C30B1/02 ,  C30B13/24 ,  C30B31/20 ,  C23C14/04 ,  H01L21/31 ,  H01L21/42

CPC分类号： C30B31/20 ,  C23C16/4405 ,  C30B1/023 ,  C30B13/24 ,  C30B29/06

摘要： In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.

摘要翻译： 在通过用激光照射物体来处理物体时，将激光照射室抽真空到适合于预期的激光处理的压力值，并且在室内的压力保持恒定在上述值的情况下进行激光处理。 此外，在激光照射室中设置电极，并且通过在激光照射期间或紧接其后的激光照射期间将蚀刻气体引入室内，并使蚀刻气体活性化，从而对室内进行清洗。

公开(公告)号：US6124155A

公开(公告)日：2000-09-26

申请号：US45696

申请日：1998-03-23

申请人： Hongyong Zhang ,  Naoto Kusumoto

发明人： Hongyong Zhang ,  Naoto Kusumoto

IPC分类号： H01L21/265 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/2026 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66765 ,  G02F1/13454 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.

公开(公告)号：US5937282A

公开(公告)日：1999-08-10

申请号：US893550

申请日：1997-07-11

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L21/423 ,  H01L21/00

CPC分类号： H01L21/2026 ,  H01L21/423 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S148/093

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

公开(公告)号：US5925421A

公开(公告)日：1999-07-20

申请号：US728409

申请日：1996-10-09

申请人： Shunpei Yamazaki ,  Naoto Kusumoto

发明人： Shunpei Yamazaki ,  Naoto Kusumoto

IPC分类号： C23C16/44 ,  C30B1/02 ,  C30B13/24 ,  C30B31/20 ,  C23C14/02

CPC分类号： C30B31/20 ,  C23C16/4405 ,  C30B1/023 ,  C30B13/24 ,  C30B29/06

摘要： In processing an object by irradiating it with laser light, a laser irradiation chamber is evacuated to a pressure value suitable for the intended laser light processing and the laser light processing is performed with the pressure in the chamber kept constant at the above value. Further, electrodes are provided in the laser irradiation chamber, and the inside of the chamber is cleaned by introducing an etching gas into the chamber during or immediately before the laser light irradiation and rendering the etching gas active.

公开(公告)号：US5900980A

公开(公告)日：1999-05-04

申请号：US797965

申请日：1997-02-06

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Koichiro Tanaka

IPC分类号： H01L21/20 ,  B23K26/073 ,  G02B27/09 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01S3/00 ,  G02B27/10

CPC分类号： G02B19/0057 ,  B23K26/0613 ,  B23K26/067 ,  B23K26/0738 ,  G02B19/0014 ,  G02B19/0095 ,  G02B27/09 ,  G02B27/0905 ,  G02B27/0927 ,  G02B27/0961 ,  G02B27/0966 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L27/1296

摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.

公开(公告)号：US5567967A

公开(公告)日：1996-10-22

申请号：US265750

申请日：1994-06-27

申请人： Naoto Kusumoto

发明人： Naoto Kusumoto

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L27/12 ,  G02F1/13454 ,  H01L29/66757 ,  G02F1/133512

摘要： A semiconductor device comprises a transparent insulating substrate, a first insulating layer, a semiconductor layer, a second insulating layer, and an island-like semiconductor layer in order from the side of the substrate. When the laser light is irradiated from the upper side of the semiconductor device the laser light irradiated to the portions having no island-like semiconductor layer thereon is absorbed by the semiconductor layer after being transmitted through the second insulating layer and the heat generates in the semiconductor layer. Heat diffusion occurs thereafter. At the same time, the energy of laser light by laser radiation from the upper side of the semiconductor device is absorbed in the island-like semiconductor layer. The energy is accumulated as the heat in the island-like semiconductor layer and the second insulating layer to suppress the heat diffusion into the substrate.

摘要翻译： 半导体器件从衬底的侧面依次包括透明绝缘衬底，第一绝缘层，半导体层，第二绝缘层和岛状半导体层。 当从半导体器件的上侧照射激光时，照射到其上没有岛状半导体层的部分的激光被透射通过第二绝缘层后被半导体层吸收，并且在半导体中产生热量 层。 此后发生热扩散。 同时，从半导体器件的上侧通过激光辐射的激光的能量被岛状半导体层吸收。 能量作为岛状半导体层和第二绝缘层中的热量积聚以抑制热扩散到基板中。