IMAGE SENSOR STRUCTURE FOR REDUCED PIXEL PITCH AND METHODS THEREOF

    公开(公告)号:US20240055463A1

    公开(公告)日:2024-02-15

    申请号:US17886945

    申请日:2022-08-12

    Inventor: Takayuki Goto

    Abstract: A pixel cell for an image sensor including a first semiconductor substrate, a photodiode, and a transfer gate is described. The first semiconductor substrate includes a first side and a second side. The first side is opposite the second side. The photodiode is disposed within the first semiconductor substrate between the first and the second side. The transfer gate is disposed proximate to the first side of the first semiconductor substrate. The transfer gate includes a planar region. The first side of the semiconductor substrate is disposed between the planar region and the photodiode. A lateral area of the photodiode is less than or equal to a lateral area of the planar region of the transfer gate.

    Image sensor with elevated floating diffusion

    公开(公告)号:US11869906B2

    公开(公告)日:2024-01-09

    申请号:US16946743

    申请日:2020-07-02

    CPC classification number: H01L27/1461 H01L27/14643 H01L27/14689

    Abstract: A pixel cell with an elevated floating diffusion region is formed to reduce diffusion leakage (e.g., gate induced drain leakage, junction leakage, etc.). The floating diffusion region can be elevated by separating a doped floating diffusion region from the semiconductor substrate by disposing an intervening layer (e.g., undoped, lightly doped, etc.) on the semiconductor substrate and beneath the doped floating diffusion region. For instance, the elevated floating diffusion region can be formed by stacked material layers composed of a lightly or undoped base or intervening layer and a heavy doped (e.g., As doped) “elevated” layer. In some examples, the stacked material layers can be formed by first and second epitaxial growth layers.

    HIGH DYNAMIC RANGE CMOS IMAGE SENSOR PIXEL WITH REDUCED METAL-INSULATOR-METAL LATERAL OVERFLOW INTEGRATION CAPACITOR LAG

    公开(公告)号:US20230421921A1

    公开(公告)日:2023-12-28

    申请号:US17849325

    申请日:2022-06-24

    Inventor: Woon Il Choi

    CPC classification number: H04N5/378 H04N5/3559 H01L27/14643 H01L27/14612

    Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a bias voltage source and the floating diffusion. The reset transistor is configured to be switched in response to a reset control signal. A lateral overflow integration capacitor (LOFIC) including an insulating region disposed between a first metal electrode and a second metal electrode is also included. The first metal electrode is coupled to a bias voltage source. The second metal electrode is coupled to the reset transistor and selectively coupled to the floating diffusion.

    Pixel-array substrate and associated method

    公开(公告)号:US11784206B2

    公开(公告)日:2023-10-10

    申请号:US17080780

    申请日:2020-10-26

    Inventor: Hui Zang Gang Chen

    Abstract: A pixel-array substrate includes a floating diffusion region and a first photodiode formed in a semiconductor substrate. A top surface of the semiconductor substrate defines a trench 1A and a trench 1B each (i) extending into the semiconductor substrate away from a planar region of the top surface between the trench 1A and the trench 1B and (ii) having a respective distal end, with respect to the floating diffusion region, located between the floating diffusion region and the first photodiode. In a horizontal plane parallel to the top surface and along an inter-trench direction between the trench 1A and the trench 1B, a first spatial separation between the trench 1A and the trench 1B increases with increasing distance from the floating diffusion region.

    Pixel Cell Having Anti-Blooming Structure and Image Sensor

    公开(公告)号:US20230307484A1

    公开(公告)日:2023-09-28

    申请号:US17701632

    申请日:2022-03-22

    CPC classification number: H01L27/14656

    Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

    OPTICAL FINGERPRINT SENSOR WITH HIGH ASPECT-RATIO METAL APERTURE STRUCTURES

    公开(公告)号:US20230306778A1

    公开(公告)日:2023-09-28

    申请号:US17702675

    申请日:2022-03-23

    CPC classification number: G06V40/1318 G02B1/11 G02B5/208 G02B3/0075

    Abstract: An under-display optical fingerprint sensors employing microlens arrays (MLAs) and an opaque aperture layer includes high aspect-ratio metal aperture structures for efficient angular signal filtering and stray light control. Instead of relying on one or more opaque aperture baffle-layers, embodiments disclosed herein utilize an image sensor's inherent metal layers for filtering signals originated from unwanted angular ranges and blocking undesired stray light could achieve similar or better performance with simplified process flow and lower cost. Layers from the sensors' inherent metal layers are brought into the sensing area on purpose to form the high aspect-ratio metal aperture structure. The metal layers in the sensing area may include apertures aligned to apertures in the opaque layer, and may also be grounded.

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