Abstract:
The present invention provides for a method for memory array verification. Initialization commands are received and memory array initialization settings are generated based on received initialization commands. The memory array initialization settings are stored in a memory array. A deterministic read output function for the memory array is identified and a logic built-in self test scan on the memory array is performed based on the identified deterministic read output function.
Abstract:
Systems and methods for reducing the power consumption associated with the capacitance of sections of a multiplexer are disclosed. At each cycle, a timing signal is selectively sent only to sections of the multiplexer that include active logic. A plurality of control signals is received for processing by a corresponding plurality of input selection circuits. A plurality of additional inputs corresponding to the plurality of input selection circuits may also be received. In one embodiment, each input selection circuit is configured to output a corresponding input signal if a corresponding control signal is asserted and a timing signal is made available to the input selection circuit. To avoid unnecessary power consumption associated with the capacitance of various portions of the multiplexer, the timing signal is only asserted to a portion of the multiplexer at any given clock cycle according to the values of the control signals.
Abstract:
Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.
Abstract:
Systems and methods for reducing the power consumption of some combinations of logic gates by reducing the number of unnecessary transitions that are made by logic gates that do not affect the output of the logic. In one embodiment, a modified exclusive-OR (XOR) gate is coupled to a modified multiplexer. The XOR gate has two inputs, Ain and Bin, and an output, XORout, which is provided as an input to the multiplexer. Another input to the multiplexer is Cin. A select signal is input to the multiplexer to select either Cin or XORout to be provided at the output of the multiplexer. If XORout is selected, the XOR gate operates in a first mode in which it functions as a normal XOR gate. If Cin is selected, the XOR gate operates in a second mode in which the XOR gate uses less power than when the XOR gate operates normally.
Abstract:
In a generator 120 in an electronic-controlled mechanical timepiece, the winding core 133b of a coil 134 arranged nearer to the perimeter of a base plate 2 is made shorter than the winding core 123b of a coil 124 arranged more inside. Accordingly, it is possible to make the area of an opening 2c can be made smaller in comparison with the prior art, and make the timepiece more small-sized by making smaller the outer diameter of the base plate 2 as keeping the distance D1 between the corner part of the opening 2c and the perimeter of the base plate 2 to the same degree as the prior art and thereby securing the strength of the base plate 2.
Abstract:
Systems and methods for pre-charging opposing nodes in a sense amplifier to substantially the same voltage in order to reduce or eliminate malfunctions arising from differences in threshold voltages of transistors coupled to the opposing nodes. One embodiment is a method including providing a silicon-on-insulator (SOI) sense amplifier having intermediate nodes between the transistors coupling each output data line to the corresponding input bit line and pre-charging each intermediate node to a predetermined voltage while the sense amplifier is not enabled. In one embodiment, the intermediate nodes are pre-charged by coupling them to a voltage source through pre-charge paths that do not include the data line pull-down transistors. In one embodiment, the method also includes decoupling the pre-charge paths after pre-charging the intermediate nodes and then enabling the sense amplifier.
Abstract:
To provide an ink composition that when printed using a nozzle, does not cause clogging at the chip of the nozzle, is free from paper dependency, and when printed on an arbitrarily chosen paper, exhibits superior properties in water resistance, scratch resistance, lightfastness and ozone resistance and an inkjet recording method using it. The ink composition contains colored fine particles containing an oil-soluble polymer and an oil-soluble dye having an oxidation potential higher than 1.0 V (vs SCE), in an aqueous medium.
Abstract:
The speaker has a diaphragm main body 30 supported resiliently on a frame 23 via an edge portion 31 around its outer circumference, and the groove ribs 35 integrally formed in the edge portion 31, wherein a regulation member 37 for partially improving a flexural strength of the edge portion 31 is provided on a part of the front or back face of the edge portion 31.
Abstract:
Provided is a fabrication method of a semiconductor integrated circuit device, which comprises disposing, in a ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, the present invention makes it possible to prevent run-off of ionized amine into the ultrapure water.
Abstract:
Disclosed is an apparatus for and a method of overcoming signal delay problems in a read-out path occurring in connection with pipelined memory circuits. A latch type sense amplifier (SA) is used to receive the memory cell logic levels during a pre-charge state in a cycle prior to read-out. Thus, the SA may quickly provide an output signal during a read latch clock cycle. The SA output is passed through a dynamically enabled logic circuit to a latch circuit for holding the receiving logic value for use in the next clock cycle.