Abstract:
The invention provides a rubber composition that can enhance fuel economy, wet-grip performance, abrasion resistance, and handling stability in a balanced manner, and a pneumatic tire using this composition. The invention relates to a rubber composition containing a rubber component, silica (1) having a nitrogen adsorption specific surface area of not more than 100 m2/g, and silica (2) having a nitrogen adsorption specific surface area of at least 180 m2/g, wherein the rubber component contains, based on 100% by mass of the rubber component, at least 5% by mass of a conjugated diene polymer containing a constituent unit based on a conjugated diene and a constituent unit represented by formula (I) below, at least one terminal of the polymer being modified with a specific compound; and a total amount of silica (1) and silica (2) is 30-150 parts by mass per 100 parts by mass of the rubber component,
Abstract:
The present invention relates to a pneumatic tire having an inner liner formed from a rubber composition that includes a butyl rubber in which the Mooney viscosity measured at 130° C. of an unvulcanized rubber of the rubber composition is at least 45, wherein the average value and standard deviation of the butyl rubber gauge of shoulder portion of a finished tire satisfy: (Standard deviation of butyl rubber gauge)/(Average value of butyl rubber gauge)≦0.060. The rubber gauge of the tire exhibits improved uniformity and is superior in air permeability resistance.
Abstract:
The present invention provides a rubber composition for a tread which enables improvement in fuel economy, breaking performance, and abrasion resistance in a balanced manner; a method for producing the rubber composition; and a heavy-load tire. The present invention relates to a rubber composition for a tread of a heavy-load tire, including a modified natural rubber having a phosphorus content of 200 ppm or less, and carbon black.
Abstract:
A method of manufacturing a semiconductor device, which forms a pattern by performing pattern transformation steps multiple times, comprises setting finished pattern sizes for patterns to be formed in each consecutive two pattern transformation steps among the plurality of pattern transformation steps based on a possible total amount of in-plane size variation of the patterns to be formed in the consecutive two pattern transformation steps.
Abstract:
The present invention provides a rubber composition that can enhance the fuel economy, wet-grip performance, abrasion resistance, and processability in a balanced manner, and also provides a pneumatic tire using this rubber composition. The present invention relates to a rubber composition that contains a rubber component, silica, and a compound represented by formula (1) below, wherein the rubber component contains, based on 100% by mass of the rubber component, not less than 5% by mass of a conjugated diene polymer containing a constituent unit based on a conjugated diene and a constituent unit represented by formula (I) below, at least one terminal of the polymer being modified with a specific compound; and an amount of the silica is 5 to 150 parts by mass per 100 parts by mass of the rubber component.
Abstract:
A mask inspection method according to the embodiments, original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate is created. After that, original production simulation which mocks an original production process is performed on the original data to derive information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original. After that, whether or not the information relating to an original pattern shape satisfies a predetermined value decided based on the original production process is determined.
Abstract:
A pattern generating method includes: extracting, from a shape of a pattern generated on a substrate, a contour of the pattern shape; setting evaluation points as verification points for the pattern shape on the contour; calculating curvatures on the contour in the evaluation points; and verifying the pattern shape based on whether the curvatures satisfy a predetermined threshold set in advance.
Abstract:
According to one embodiment, a semiconductor device includes a plurality of first interconnects, a second interconnect, a third interconnect, and a plurality of conductive members. The plurality of first interconnects are arranged periodically to extend in one direction. The second interconnect is disposed outside a group of the plurality of first interconnects to extend in the one direction. The third interconnect is provided between the group and the second interconnect. The plurality of conductive members are disposed on a side opposite to the group as viewed from the second interconnect. A shortest distance between the first interconnect and the third interconnect, a shortest distance between the third interconnect and the second interconnect, and a shortest distance between the first interconnects are equal. A shortest distance between the second interconnect and the conductive member is longer than the shortest distance between the first interconnects.
Abstract:
A pattern dimension calculation method according to one embodiment calculates a taper shape of a mask member used as a mask when a circuit pattern is processed in an upper layer of the circuit pattern formed on a substrate. The method calculates an opening angle facing the mask member from a shape prediction position on the circuit pattern on the basis of the taper shape. The method calculates a dimension of the circuit pattern according to the opening angle formed at the shape prediction position.
Abstract:
A method of manufacturing a semiconductor device according to an embodiment includes determining a second exposure parameter including exposure parameters except for an exposure amount from a dimension distribution information so that a resist pattern of a first resist pattern formed based on a second pattern has a desired dimension in a plurality of regions to be shot within a surface of a wafer.