公开(公告)号：US20090316475A1

公开(公告)日：2009-12-24

申请号：US12232660

申请日：2008-09-22

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-Jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-Jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: Provided are an information storage device and a method of operating the same. The information storage device includes: a magnetic layer having a plurality of magnetic domain regions and a magnetic domain wall interposed between the magnetic domain regions; a first unit disposed on a first region which is one of the plurality of magnetic domain regions for recording information to the first region; a second unit connected to the first unit for inducing a magnetic field so as to record information to the first region.

Abstract translation: 提供了一种信息存储装置及其操作方法。 信息存储装置包括：具有多个磁畴区域的磁性层和介于磁畴区域之间的磁畴壁; 第一单元，设置在作为用于将信息记录到第一区域的多个磁畴区域中的一个的第一区域上; 连接到第一单元的第二单元，用于感应磁场，以便将信息记录到第一区域。

公开(公告)号：US20060131574A1

公开(公告)日：2006-06-22

申请号：US11182572

申请日：2005-07-15

Applicant: Han Young Yu ,  Ung Hwan Pi ,  Chan Woo Park ,  Sung Yool Choi

Inventor： Han Young Yu ,  Ung Hwan Pi ,  Chan Woo Park ,  Sung Yool Choi

IPC: H01L21/66 ,  H01L23/58

CPC classification number: G01L21/12

Abstract: Provided are a nanowire sensor and a method of manufacturing the same. The nanowire sensor includes: a sensing target system comprising a target element to be detected; two electrodes separated from each other contained in the sensing target system; vanadium oxide (V2O5) nanowires incorporated in the sensing target system and attached to the two electrodes; and a measuring unit for measuring a change in resistance of the nanowires as the nanowires detect the target element.

Abstract translation: 提供一种纳米线传感器及其制造方法。 纳米线传感器包括：感测目标系统，包括要检测的目标元件; 包含在感测目标系统中的彼此分开的两个电极; 氧化钒（V 2 O 5 O）纳米线并入感测目标系统并连接到两个电极上; 以及测量单元，用于当纳米线检测到目标元件时测量纳米线的电阻变化。

公开(公告)号：US09570675B2

公开(公告)日：2017-02-14

申请号：US14167553

申请日：2014-01-29

Applicant: Kee-won Kim ,  Kwang-seok Kim ,  Sung-chul Lee ,  Young-man Jang ,  Ung-hwan Pi

Inventor： Kee-won Kim ,  Kwang-seok Kim ,  Sung-chul Lee ,  Young-man Jang ,  Ung-hwan Pi

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.

Abstract translation: 磁阻结构，包括该磁阻结构的磁性随机存取存储器以及制造磁阻结构的方法包括具有固定的磁化方向的第一磁性层，与第一磁性层对应的第二磁性层， 第二磁性层是可变的，以及在第一磁性层和第二磁性层之间的磁阻（MR）增强层和中间层。

公开(公告)号：US20160079518A1

公开(公告)日：2016-03-17

申请号：US14816410

申请日：2015-08-03

Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

IPC: H01L43/04 ,  H01L43/08 ,  H01L43/10 ,  H01L43/06

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/222 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。

公开(公告)号：US09236105B2

公开(公告)日：2016-01-12

申请号：US14184043

申请日：2014-02-19

Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

公开(公告)号：US08427247B2

公开(公告)日：2013-04-23

申请号：US12801710

申请日：2010-06-22

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

IPC: H03B5/18

CPC classification number: H03B15/006

Abstract: An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

Abstract translation: 振荡器包括：多个自由层和设置在多个自由层之间的非磁性层。 多个自由层中的每一个具有垂直的磁各向异性或面内磁各向异性。 定期切换自由层的磁化方向，使给定频带内的信号振荡。

公开(公告)号：US08254164B2

公开(公告)日：2012-08-28

申请号：US12289484

申请日：2008-10-29

Applicant: Sung-chul Lee ,  Kwang-seok Kim ,  Ung-hwan Pi ,  Ji-young Bae ,  Sun-ae Seo

Inventor： Sung-chul Lee ,  Kwang-seok Kim ,  Ung-hwan Pi ,  Ji-young Bae ,  Sun-ae Seo

IPC: G11C11/14 ,  H01L43/02

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

Abstract: Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.

Abstract translation: 提供可以是使用磁畴壁运动的半导体器件。 半导体器件可以包括具有多个磁畴的磁道和被配置为接触磁道的导热绝缘层。 导热绝缘层可以防止或减少由于提供给磁道的电流而导致的磁道被加热。

公开(公告)号：US20120126904A1

公开(公告)日：2012-05-24

申请号：US13208061

申请日：2011-08-11

Applicant: Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H03K3/03 ,  B32B38/08 ,  H03B1/00 ,  B05D5/12

CPC classification number: H03B15/006 ,  H01L27/22

Abstract: Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.

Abstract translation: 提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。 振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和 固定层元素。 多个振荡单元可以布置在基底自由层上。

公开(公告)号：US08130530B2

公开(公告)日：2012-03-06

申请号：US12591774

申请日：2009-12-01

Applicant: Ung-hwan Pi ,  Young-soo Park ,  Sun-ae Seo ,  Young-jin Cho ,  Sung-chul Lee ,  Ji-young Bae

Inventor： Ung-hwan Pi ,  Young-soo Park ,  Sun-ae Seo ,  Young-jin Cho ,  Sung-chul Lee ,  Ji-young Bae

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: Provided are information storage devices using movement of magnetic domain walls and methods of operating information storage devices. An information storage device includes a magnetic track and an operating unit. The magnetic track includes a plurality of magnetic domains separated by magnetic domain walls. The size of the operating unit is sufficient to cover at least two adjacent magnetic domains. And, the operating unit may be configured to write/read information to/from a single magnetic domain as well as a plurality of magnetic domains of the magnetic track.

Abstract translation: 提供了使用磁畴壁移动的信息存储装置和操作信息存储装置的方法。 信息存储装置包括磁道和操作单元。 磁道包括由磁畴壁分开的多个磁畴。 操作单元的尺寸足以覆盖至少两个相邻的磁畴。 并且，操作单元可以被配置为向/从单个磁畴以及磁道的多个磁畴写入/读取信息。

公开(公告)号：US20120049966A1

公开(公告)日：2012-03-01

申请号：US13174932

申请日：2011-07-01

Applicant: Ung-hwan Pi ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Kwang-seok Kim ,  Sung-chul Lee

Inventor： Ung-hwan Pi ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Kwang-seok Kim ,  Sung-chul Lee

IPC: H01S1/02

CPC classification number: H03B15/006

Abstract: Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.

Abstract translation: 提供了振荡器及其操作方法，所述振荡器包括磁性层和构造成固定磁性层的磁化方向的磁化固定元件。 振荡器通过使用磁性层的磁矩的进动来产生信号。