ESD PROTECTION CIRCUIT WITH HIGH IMMUNITY TO VOLTAGE SLEW
    31.
    发明申请
    ESD PROTECTION CIRCUIT WITH HIGH IMMUNITY TO VOLTAGE SLEW 审中-公开
    具有高电压ESD保护电路

    公开(公告)号:US20140036398A1

    公开(公告)日:2014-02-06

    申请号:US13567239

    申请日:2012-08-06

    CPC classification number: H01L27/0285 H02H9/046

    Abstract: A protection circuit (FIG. 2) for an integrated circuit is disclosed. The protection circuit comprises a protection transistor (MN0) having a current path coupled between a first terminal (VDD) and a second terminal (GND). A current mirror (MP1, MP0, MN2, MN1) has an output terminal coupled to a control terminal of the protection transistor. A delay circuit (R1, C0) is connected between the first and second terminals and has a delay output terminal connected to a first input terminal (MN1) of the current mirror.

    Abstract translation: 公开了一种用于集成电路的保护电路(图2)。 保护电路包括具有耦合在第一端子(VDD)和第二端子(GND)之间的电流通路的保护晶体管(MN0)。 电流镜(MP1,MP0,MN2,MN1)具有耦合到保护晶体管的控制端的输出端。 延迟电路(R1,C0)连接在第一和第二端子之间,并且具有连接到电流镜的第一输入端子(MN1)的延迟输出端子。

    MEDIA EXPOSURE AND VERIFICATION UTILIZING INDUCTIVE COUPLING
    33.
    发明申请
    MEDIA EXPOSURE AND VERIFICATION UTILIZING INDUCTIVE COUPLING 有权
    媒体曝光和验证利用电感耦合

    公开(公告)号:US20130157563A1

    公开(公告)日:2013-06-20

    申请号:US13327993

    申请日:2011-12-16

    Abstract: A computer-implemented system and method for establishing media data exposure, where a media device, such as a computer, radio, television and the like, receive media data and produces research data from it. The research data may be based on computer-based or computer network-based characteristics, ancillary codes or audio signatures. As the research data is being produced, an inductive coupling is sought for nearby portable computer devices. Once a portable computing device inductively couples to the media device, information is transferred, allowing a system to determine and/or verify that specific users were exposed to particular media data.

    Abstract translation: 用于建立媒体数据曝光的计算机实现的系统和方法,其中诸如计算机,无线电,电视等媒体设备从其接收媒体数据并产生研究数据。 研究数据可以基于基于计算机或计算机网络的特征,辅助代码或音频签名。 随着研究数据的制作,寻找附近便携式计算机设备的电感耦合。 一旦便携式计算设备感应地耦合到媒体设备,则传送信息,允许系统确定和/或验证特定用户被暴露于特定媒体数据。

    SEMICONDUCTOR PROCESSING PARTS HAVING APERTURES WITH DEPOSITED COATINGS AND METHODS FOR FORMING THE SAME
    34.
    发明申请
    SEMICONDUCTOR PROCESSING PARTS HAVING APERTURES WITH DEPOSITED COATINGS AND METHODS FOR FORMING THE SAME 有权
    具有沉积涂层的孔的半导体加工部件及其形成方法

    公开(公告)号:US20100326355A1

    公开(公告)日:2010-12-30

    申请号:US12881634

    申请日:2010-09-14

    Abstract: Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

    Abstract translation: 半导体处理反应器部件中的孔的尺寸适于促进保护涂层的沉积,例如通过大气压下的化学气相沉积。 在一些实施例中,孔各自具有流动收缩部,其使一部分中的孔变窄,并且还将孔分成一个或多个其它部分。 在一些实施例中,一个或多个其它部分的长宽比为约15:1或更小,或约7:1或更小,并且具有圆柱形或圆锥形横截面形状。 通过化学气相沉积(包括大气压下的化学气相沉积),用诸如碳化硅涂层的保护涂层涂覆孔。

    ESD protection device with controllable triggering characteristics using driver circuit related to power supply
    35.
    发明授权
    ESD protection device with controllable triggering characteristics using driver circuit related to power supply 有权
    具有可控触发特性的ESD保护器件使用与电源相关的驱动电路

    公开(公告)号:US07800127B1

    公开(公告)日:2010-09-21

    申请号:US11503593

    申请日:2006-08-14

    CPC classification number: H01L29/7436 H01L27/0262 H01L29/87

    Abstract: In an ESD device for fast switching applications based on a BSCR or NLDMOS-SCR, an anode junction control electrode is provided by not connecting the anode electrode to the collector of the BSCR or to the drain of the NLDMOS-SCR, and a cathode junction control electrode is provided by forming an additional n+ region in the BSCR or an additional p+ region in the p-well of the NLDMOS-SCR. The triggering voltage of the ESD device is adjusted after a time delay by controlling one or both of the control electrodes using an RC-timer-driver circuit.

    Abstract translation: 在用于基于BSCR或NLDMOS-SCR的快速切换应用的ESD装置中,阳极结控制电极通过不将阳极电极连接到BSCR的集电极或NLDMOS-SCR的漏极而提供,并且阴极结 通过在BSCR中的附加n +区域或NLDMOS-SCR的p阱中的附加p +区域形成控制电极。 通过使用RC定时器驱动器电路控制一个或两个控制电极,在延迟之后调整ESD装置的触发电压。

    ESD high frequency diodes
    36.
    发明授权
    ESD high frequency diodes 有权
    ESD高频二极管

    公开(公告)号:US07795102B1

    公开(公告)日:2010-09-14

    申请号:US11654735

    申请日:2007-01-17

    CPC classification number: H01L29/8611 H01L27/0255 H01L29/161 H01L29/66128

    Abstract: In a SiGe BJT process, a diode is formed by defining a p-n junction between the BJT collector and BJT internal base, blocking the external gate regions of the BJT and doping the emitter poly of the BJT with the same dopant type as the internal base thereby using the emitter contact to define the contact to the internal base. Electrical contact to the collector is established through a sub-collector or by means of a second emitter poly and internal base both doped with the same dopant type as the collector.

    Abstract translation: 在SiGe BJT工艺中,通过限定BJT集电极和BJT内部基极之间的pn结,形成二极管,阻挡BJT的外部栅极区域,并以与内部基底相同的掺杂剂类型掺杂BJT的发射极多晶, 使用发射极接触来定义与内部基座的接触。 通过子集电极或通过掺杂与收集器相同的掺杂剂类型的第二发射极多晶硅和内部基极建立与集电极的电接触。

    Method and System for Distributed Computing Interface
    37.
    发明申请
    Method and System for Distributed Computing Interface 有权
    分布式计算接口的方法和系统

    公开(公告)号:US20100122184A1

    公开(公告)日:2010-05-13

    申请号:US12564010

    申请日:2009-09-21

    CPC classification number: G06F3/0486 H04L12/1827

    Abstract: A method and system for distributed computing interface are disclosed. According to one embodiment, a computer implemented method comprises accessing a collaborative interface, wherein the collaborative interface comprises persistent shared space, wherein visual representation of the collaborative interface is identical for each client accessing the collaborative interface. In a single action, an object is dragged into the collaborative interface and the object is displayed in real time in the collaborative interface. The object is accessible to other clients in the collaborative interface and the state of the object is continuously synchronized. The object is manipulated in the collaborative interface and other clients accessing the collaborative interface are viewed.

    Abstract translation: 公开了一种用于分布式计算接口的方法和系统。 根据一个实施例,计算机实现的方法包括访问协作界面,其中协作接口包括持久共享空间,其中协作接口的视觉表示对于访问协作界面的每个客户端是相同的。 在单个动作中,将对象拖入协作界面,并在对象在协作界面中实时显示。 对象可以在协作界面中访问其他客户端,并且对象的状态是持续同步的。 在协作界面中操纵该对象,并查看访问协作界面的其他客户端。

    SEMICONDUCTOR PROCESSING PARTS HAVING APERTURES WITH DEPOSITED COATINGS AND METHODS FOR FORMING THE SAME
    38.
    发明申请
    SEMICONDUCTOR PROCESSING PARTS HAVING APERTURES WITH DEPOSITED COATINGS AND METHODS FOR FORMING THE SAME 有权
    具有沉积涂层的孔的半导体加工部件及其形成方法

    公开(公告)号:US20090071407A1

    公开(公告)日:2009-03-19

    申请号:US11856418

    申请日:2007-09-17

    Abstract: Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

    Abstract translation: 半导体处理反应器部件中的孔的尺寸适于促进保护涂层的沉积,这种化学气相沉积在大气压下。 在一些实施例中,孔各自具有流动收缩部,其使一部分中的孔变窄,并且还将孔分成一个或多个其它部分。 在一些实施例中,一个或多个其它部分的长宽比为约15:1或更小,或约7:1或更小,并且具有圆柱形或圆锥形横截面形状。 通过化学气相沉积(包括大气压下的化学气相沉积),用诸如碳化硅涂层的保护涂层涂覆孔。

    PROTECTIVE INSERTS TO LINE HOLES IN PARTS FOR SEMICONDUCTOR PROCESS EQUIPMENT
    39.
    发明申请
    PROTECTIVE INSERTS TO LINE HOLES IN PARTS FOR SEMICONDUCTOR PROCESS EQUIPMENT 有权
    用于半导体工艺设备的部件中的保护插件

    公开(公告)号:US20090023302A1

    公开(公告)日:2009-01-22

    申请号:US11779033

    申请日:2007-07-17

    CPC classification number: C23C16/4404

    Abstract: Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openings in the reactor parts and the inserts are placed in the openings. The inserts are provided with a hole, which can accept another reactor part such as a thermocouple. The insert protects the walls of the opening from abrasion caused by insertion of the other reactor part into the opening.

    Abstract translation: 插入件用于在形成半导体处理反应器的部分中对开口进行排列。 在一些实施方案中,反应器部分限定反应室。 反应器部件可以由石墨形成。 在反应器部件的开口的表面上沉积一层碳化硅,并且将插入件放置在开口中。 插入件设置有孔,其可接受另一个反应器部件,例如热电偶。 插入物保护开口的壁免受另一反应器部件插入开口所引起的磨损。

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