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公开(公告)号：US20100330498A1
公开(公告)日：2010-12-30
申请号：US12825117
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
Abstract: Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
Abstract translation: 提供了自对准间隔物多图案化方法。 所述方法包括对光致抗蚀剂图案进行碱处理并允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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公开(公告)号：US20100297851A1
公开(公告)日：2010-11-25
申请号：US12781486
申请日：2010-05-17
Applicant: Young Cheol BAE , Yi Liu , Thomas Cardolaccia , Peter Trefonas, III
Inventor： Young Cheol BAE , Yi Liu , Thomas Cardolaccia , Peter Trefonas, III
IPC: H01L21/306 , G03F7/004
CPC classification number: H01L21/0273 , G03F7/0035 , G03F7/0382 , G03F7/0392 , G03F7/2041 , G03F7/40
Abstract: Compositions for use in multiple exposure photolithography and methods of forming electronic devices using a multiple exposure lithographic process are provided. The compositions find particular applicability in semiconductor device manufacture for making high-density lithographic patterns.
Abstract translation: 提供了用于多次曝光光刻的组合物和使用多次曝光光刻工艺形成电子器件的方法。 该组合物在用于制造高密度光刻图案的半导体器件制造中具有特别的适用性。
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33.发明授权Polymers, photoresist compositions and methods of forming photolithographic patterns 有权聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US09298093B2
公开(公告)日：2016-03-29
申请号：US13341939
申请日：2011-12-31
Applicant: Young Cheol Bae , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
Inventor： Young Cheol Bae , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
CPC classification number: G03F7/2041 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/325
Abstract: Polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 含有具有特定缩醛部分的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 用光致抗蚀剂组合物涂覆的基材和形成光刻图案的方法。 聚合物，光致抗蚀剂组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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34.发明授权Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns 有权单体，聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US08771917B2
公开(公告)日：2014-07-08
申请号：US13341931
申请日：2011-12-31
Applicant: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
Inventor： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
CPC classification number: G03F7/0397 , C07D307/93 , C07D317/24 , C08F24/00 , C08F220/28 , G03F7/0382 , G06F7/38 , Y10S430/111
Abstract: Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供含有缩醛部分的（甲基）丙烯酸酯单体，含有由这种单体形成的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 单体，聚合物和光致抗蚀剂组合物可用于形成光刻图案。 还提供了涂覆有光致抗蚀剂组合物的基材，形成光刻图案的方法和电子装置。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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公开(公告)号：US08609891B2
公开(公告)日：2013-12-17
申请号：US13095533
申请日：2011-04-27
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
IPC: G03F7/004 , G03F7/028 , G03F7/26 , C07C309/04 , C07C309/06 , C07C309/13
CPC classification number: G03F7/0045 , C07C309/10 , C07C309/12 , C07C309/17 , C07C381/12 , C07D207/27 , G03F7/0046
Abstract: New photoacid generator compounds are provided that comprise a nitrogen-base functional component of the structure —C(═O)N
Abstract translation: 提供了新的光酸产生剂化合物，其包含结构-C（= O）N'的氮 - 碱官能组分。 还提供了包含本发明的一种或多种PAG的光致抗蚀剂组合物。
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Patent Agency Ranking
36.发明申请POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAHIC PATTERNS 有权聚合物，光电组合物和形成光刻胶图案的方法公开(公告)号：US20120308927A1
公开(公告)日：2012-12-06
申请号：US13309843
申请日：2011-12-02
Applicant: Young Cheol Bae , David Richard Wilson , Jibin Sun
Inventor： Young Cheol Bae , David Richard Wilson , Jibin Sun
CPC classification number: G03F7/0392 , C08F220/28 , C08F2220/283 , C08F2220/285 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/325
Abstract: Provided are polymers and photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了可用于形成光刻图案的聚合物和光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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37.发明申请公开(公告)号：US20120219902A1
公开(公告)日：2012-08-30
申请号：US13407529
申请日：2012-02-28
Applicant: Young Cheol Bae , Jong Keun Park , Seung-Hyun Lee , Yi Liu , Thomas Cardolaccia , Rosemary Bell
Inventor： Young Cheol Bae , Jong Keun Park , Seung-Hyun Lee , Yi Liu , Thomas Cardolaccia , Rosemary Bell
CPC classification number: G03F7/2041 , G03F7/0397 , G03F7/091 , G03F7/11 , G03F7/325
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了可用于形成光刻图案的光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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公开(公告)号：US20120219901A1
公开(公告)日：2012-08-30
申请号：US13407508
申请日：2012-02-28
Applicant: Young Cheol BAE , Rosemary BELL , Thomas CARDOLACCIA , Seung-Hyun LEE , Yi LIU , Jong Keun PARK
Inventor： Young Cheol BAE , Rosemary BELL , Thomas CARDOLACCIA , Seung-Hyun LEE , Yi LIU , Jong Keun PARK
CPC classification number: G03F7/0397 , G03F7/091 , G03F7/2041 , G03F7/325
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
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39.发明申请公开(公告)号：US20120219755A1
公开(公告)日：2012-08-30
申请号：US13407467
申请日：2012-02-28
Applicant: Young Cheol Bae , Seung-Hyun Lee
Inventor： Young Cheol Bae , Seung-Hyun Lee
CPC classification number: G03F7/325 , G03F7/094 , G03F7/2041 , Y10T428/24355
Abstract: Provided are photoresist developer compositions that include a mixture of organic solvents. Also provided are methods of forming photolithographic patterns using negative tone development, coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.
Abstract translation: 提供了包括有机溶剂的混合物的光致抗蚀剂显影剂组合物。 还提供了使用负色调显影，涂布基板和通过该方法形成的电子器件形成光刻图案的方法。 该方法在电子设备的制造中具有特别的适用性。
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40.发明申请POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS 有权聚合物，光电组合物和形成光刻图案的方法公开(公告)号：US20120171617A1
公开(公告)日：2012-07-05
申请号：US13341935
申请日：2011-12-31
Applicant: Young Cheol BAE , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
Inventor： Young Cheol BAE , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
IPC: G03F7/20 , G03F7/004 , C08F224/00
CPC classification number: G03F7/0397 , C08F220/28 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
Abstract: Provided are polymers that include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety. Also provided are photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供的是包括包含特定缩醛部分的单元和包含内酯部分的单元的聚合物。 还提供含有这种聚合物的光致抗蚀剂组合物，用光致抗蚀剂组合物涂覆的基材和形成光刻图案的方法。 聚合物，组合物，方法和涂覆的基底在半导体器件的制造中具有特别的适用性。
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