TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
    32.
    发明申请
    TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
    晶体管结构及其制造方法

    公开(公告)号:US20120068268A1

    公开(公告)日:2012-03-22

    申请号:US12888351

    申请日:2010-09-22

    IPC分类号: H01L27/088 H01L21/336

    摘要: A method of fabricating a transistor structure includes the step of providing a substrate having a gate thereon. Then, a first spacer is formed at two sides of the gate. After that, an LDD region is formed in the substrate at two sides of the gate. Later, a second spacer comprising a carbon-containing spacer and a sacrificing spacer is formed on the first spacer. Subsequently, a source/drain region is formed in the substrate at two sides of the gate. Finally, the sacrificing spacer is removed entirely, and part of the carbon-containing spacer is also removed. The remaining carbon-containing spacer has an L shape. The carbon-containing spacer has a first carbon concentration, and the sacrificing spacer has a second carbon concentration. The first carbon concentration is greater than the second carbon concentration.

    摘要翻译: 制造晶体管结构的方法包括提供其上具有栅极的衬底的步骤。 然后,在栅极的两侧形成第一间隔物。 之后,在栅极两侧的基板上形成LDD区域。 之后,在第一间隔物上形成包含含碳间隔物和牺牲间隔物的第二间隔物。 随后,在栅极两侧的基板中形成源/漏区。 最后,完全除去牺牲间隔物,并且还除去部分含碳间隔物。 剩余的含碳隔离物具有L形。 含碳隔离物具有第一碳浓度,牺牲间隔物具有第二碳浓度。 第一个碳浓度大于第二个碳浓度。

    Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device
    33.
    发明授权
    Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device 有权
    制造含氮栅极电介质层和半导体器件的方法

    公开(公告)号:US07312139B2

    公开(公告)日:2007-12-25

    申请号:US11028717

    申请日:2005-01-03

    IPC分类号: H01L21/4763 H01L21/3205

    摘要: A method of fabricating a nitrogen-containing gate dielectric layer is described. First, a gate dielectric layer is formed on a substrate by performing a dilute wet oxidation process. Then, a nitridation step is performed for doping nitrogen into the gate dielectric layer. After that, a re-oxidation step is performed for repairing the nitrogen-doped gate dielectric layer. The above steps are carried out inside the same reaction chamber. Moreover, two or more wafers can be treated inside the reaction chamber at the same time.

    摘要翻译: 描述了制造含氮栅介质层的方法。 首先,通过进行稀薄的湿式氧化处理,在基板上形成栅极电介质层。 然后,进行氮化步骤以将氮掺杂到栅极介电层中。 之后,进行再氧化步骤,以修复氮掺杂栅介电层。 上述步骤在相同的反应室内进行。 此外,可以同时在反应室内处理两个或更多个晶片。

    Method of cleaning a semiconductor substrate and cleaning recipes
    34.
    发明申请
    Method of cleaning a semiconductor substrate and cleaning recipes 有权
    清洗半导体衬底和清洁配方的方法

    公开(公告)号:US20050252525A1

    公开(公告)日:2005-11-17

    申请号:US10843444

    申请日:2004-05-12

    摘要: A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.

    摘要翻译: 公开了一种清洁方法和清洁配方。 本发明涉及一种清洗半导体衬底和清洁配方的方法。 本发明利用包含稀释氢氟酸的第一清洗溶液和包含氯化氢和过氧化氢(H 2 O 2 O 2)的第二清洗溶液来清洁半导体衬底而不使用 包括氢氧化铵的碱性溶液。 因此,在选择性外延生长(SEG)工艺中提供半导体衬底的干净的表面以生长具有光滑表面的外延层。