摘要:
A gate structure and a method for fabricating the same are described. A substrate is provided, and a gate dielectric layer is formed on the substrate. The formation of the gate dielectric layer includes depositing a silicon nitride layer on the substrate by simultaneously introducing a nitrogen-containing gas and a silicon-containing gas. A gate is formed on the gate dielectric layer, so as to form the gate structure.
摘要:
A method of fabricating a transistor structure includes the step of providing a substrate having a gate thereon. Then, a first spacer is formed at two sides of the gate. After that, an LDD region is formed in the substrate at two sides of the gate. Later, a second spacer comprising a carbon-containing spacer and a sacrificing spacer is formed on the first spacer. Subsequently, a source/drain region is formed in the substrate at two sides of the gate. Finally, the sacrificing spacer is removed entirely, and part of the carbon-containing spacer is also removed. The remaining carbon-containing spacer has an L shape. The carbon-containing spacer has a first carbon concentration, and the sacrificing spacer has a second carbon concentration. The first carbon concentration is greater than the second carbon concentration.
摘要:
A method of fabricating a nitrogen-containing gate dielectric layer is described. First, a gate dielectric layer is formed on a substrate by performing a dilute wet oxidation process. Then, a nitridation step is performed for doping nitrogen into the gate dielectric layer. After that, a re-oxidation step is performed for repairing the nitrogen-doped gate dielectric layer. The above steps are carried out inside the same reaction chamber. Moreover, two or more wafers can be treated inside the reaction chamber at the same time.
摘要:
A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.
摘要翻译:公开了一种清洁方法和清洁配方。 本发明涉及一种清洗半导体衬底和清洁配方的方法。 本发明利用包含稀释氢氟酸的第一清洗溶液和包含氯化氢和过氧化氢(H 2 O 2 O 2)的第二清洗溶液来清洁半导体衬底而不使用 包括氢氧化铵的碱性溶液。 因此,在选择性外延生长(SEG)工艺中提供半导体衬底的干净的表面以生长具有光滑表面的外延层。
摘要:
The present invention provides a method of forming an isolation structure. A substrate is provided, and a trench is formed in the substrate. Next, a semiconductor layer is formed on a surface of the trench. A nitridation is carried out to form a nitridation layer in the semiconductor layer. Lastly, an insulation layer is filled into the trench.
摘要:
A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.
摘要:
A semiconductor process includes the following steps. A gate structure is formed on a substrate. An oxide layer is formed and covers the gate structure and the substrate. A plasma process without oxygen is performed to densify the oxide layer. A material layer is formed and covers the oxide layer. The material layer and the oxide layer are etched to form a dual spacer.
摘要:
A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.
摘要:
A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.
摘要:
A fabricating method of a MOS transistor includes the following steps. A substrate is provided. A gate dielectric layer is formed on the substrate. A nitridation process containing nitrogen plasma and helium gas is performed to nitride the gate dielectric layer. A fin field-effect transistor and fabrication method thereof are also provided.