公开(公告)号：US20230116058A1

公开(公告)日：2023-04-13

申请号：US17902987

申请日：2022-09-05

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Kevin Fairbairn ,  Denis Shaw ,  Victor Brouk

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US11610761B2

公开(公告)日：2023-03-21

申请号：US17150633

申请日：2021-01-15

Applicant: Advanced Energy Industries, Inc.

Inventor： Kevin Fairbairn ,  Denis Shaw ,  Daniel Carter

IPC: H01J37/32 ,  C23C14/48

Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

公开(公告)号：US11437221B2

公开(公告)日：2022-09-06

申请号：US17171164

申请日：2021-02-09

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Kevin Fairbairn ,  Denis Shaw ,  Victor Brouk

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber comprising a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20210134562A1

公开(公告)日：2021-05-06

申请号：US17150633

申请日：2021-01-15

Applicant: Advanced Energy Industries, Inc.

Inventor： Kevin Fairbairn ,  Denis Shaw ,  Daniel Carter

IPC: H01J37/32 ,  C23C14/48

Abstract: Systems and methods for plasma processing are disclosed. A method includes applying pulsed power to a plasma processing chamber with an excitation source during a first processing step with a first duty cycle and applying, during the first processing step, an asymmetric periodic voltage waveform to a substrate support to produce a first plasma sheath voltage between a substrate and a plasma. Pulsed power is applied to the plasma processing chamber with the excitation source during a second processing step with a second duty cycle and during the second processing step, a different asymmetric periodic voltage waveform is applied to the substrate support to produce a different plasma sheath voltage between the substrate and the plasma.

公开(公告)号：US10707055B2

公开(公告)日：2020-07-07

申请号：US16194104

申请日：2018-11-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US10607813B2

公开(公告)日：2020-03-31

申请号：US16193790

申请日：2018-11-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Kevin Fairbairn ,  Denis Shaw ,  Daniel Carter

IPC: H01J37/32 ,  C23C14/48

Abstract: Systems and methods for plasma processing are disclosed. A method includes applying power to a plasma processing chamber during a first processing step and generating, during the first processing step, a first plasma sheath voltage between a substrate and a plasma. During a second processing step (that follows the first processing step), power is applied to the plasma processing chamber and a different plasma sheath voltage is applied between the substrate and the plasma.

公开(公告)号：US20190157043A1

公开(公告)日：2019-05-23

申请号：US16194104

申请日：2018-11-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Kevin Fairbairn ,  Daniel Carter

IPC: H01J37/32 ,  H01L21/67

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.

公开(公告)号：US20180019100A1

公开(公告)日：2018-01-18

申请号：US15667239

申请日：2017-08-02

Applicant: Advanced Energy Industries, Inc.

Inventor： Victor Brouk ,  Daniel J. Hoffman ,  Daniel Carter

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/3299

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

公开(公告)号：US20170278665A1

公开(公告)日：2017-09-28

申请号：US15495513

申请日：2017-04-24

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/08 ,  H01J37/32 ,  G01N27/06

CPC classification number: H01J37/08 ,  G01N27/06 ,  H01J37/32944 ,  H01J37/3299

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

公开(公告)号：US20150279631A1

公开(公告)日：2015-10-01

申请号：US14741109

申请日：2015-06-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel J. Hoffman ,  Daniel Carter ,  Victor Brouk ,  Karen Peterson ,  Randy Grilley

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/327 ,  H05H1/46 ,  H05H2001/4675

Abstract: This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

Abstract translation: 本公开描述了用于将能量电容耦合到等离子体中以点燃和维持远程等离子体源内的等离子体的系统，方法和装置。 功率由至少部分地围绕或被第二电极围绕的第一电极提供。 第二个电极可以接地或浮动。 可以布置第一和第二介电部件以将电极中的一个或两个与等离子体分开，从而将等离子体与一个或两个电极隔离。