摘要:
Example embodiments provide a semiconductor memory device and method of forming a semiconductor memory device that may equalize load due to a coupling capacitance between a line and a component signal when the line intersects the component signal in a memory cell array. A line may intersect a memory cell region between a transmitting point (A) and a receiving point (B) of a signal. A line between the transmitting point (A) and the receiving point (B) may be bent at two portions of each of bit lines. Because areas where the line and the bit lines extend parallel to each other may be equal in dimension at each bit line, coupling capacitances between the line and the bit lines may be equalized. The read characteristic may not be affected by the coupling capacitances.
摘要:
The present invention is directed to an information processing apparatus adapted for processing contents provided by contents distribution service. To contents distributed by a contents server (12), a sublicense which prescribes utilization conditions of the respective contents is added. From a license server (13), a main license which prescribes utilization condition of the entirety of contents distributed via channel that user contracts is provided. When it is instructed that contents are reproduced, reproduction of contents is permitted at a receiver (15) in the case where utilization conditions prescribed by the sublicense and the main license are both satisfied.
摘要:
A method for joining fluid containers and fluid ejectors in a fluid ejecting device are provided. The fluid container includes one or more heat stakes and a substrate includes one or more apertures for receiving the heat stakes and one or more three-dimensional features in the vicinity of the one or more apertures. The fluid ejector and optionally an elastic member are interposed between the fluid container and the substrate. Thermal energy is applied to the one or more heat stakes so that the one or more heat stakes soften to occupy the apertures and three-dimensional features of the substrate and pressure is applied to maintain contact between the fluid container, elastic member, fluid ejector and substrate. The present invention is also directed to substrate including one or more apertures for receiving heat stakes and one or more three-dimensional features in the vicinity of the one or more apertures.
摘要:
A method of producing high-quality and large-diameter single crystals by the Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as dislocation clusters and laser scattering tomography defects. Specifically, it is a method of producing silicon single crystals which comprises carrying out the crystal pulling while maintaining the solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the peripheral region thereof and while applying a magnetic field, and optionally in addition to the above, while maintaining the temperature gradient in the direction of axis of pulling in the peripheral region at a level lower than that in the central portion in the range of from the melting point to 1,200° C. In this case, it is desirable that the portion of the single crystal surface lying at least 50 mm above the melt surface be shielded from direct radiant heat from the heater and/or crucible wall, that a horizontal magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped magnetic field showing an intensity of 0.02 to 0.07 T at a crucible wall site on the melt surface be applied and that the crucible be rotated at a speed of not more than 5 min−1 and the single crystal at a speed of not less than 13 min−1.
摘要:
An inner surface of a quartz crucible after being used is cleaned by an acid liquid, and an extraneous material adhered to its inner surface is removed. The inner surface after the extraneous material has been removed is heat treated at 1600° C. or more, and the inner surface where cristobalite formation occurs is recovered into an amorphous state. In this manner, the quartz crucible after being used for growing single crystal silicon is reproduced to a level equal to a new crucible.
摘要:
A method of assaying immunization stimulating activity comprising (a) immunizing a lymphocyte in vitro by culturing the lymphocyte in contact with an immobilized antigen in a medium containing a test substance and (b) detecting an immunoglobulin, which is produced and secreted into the medium by the immunized lymphocyte and bound to the immobilized antigen, by counting the immunostained spots deposited in situ on the surface of the immobilized antigen.
摘要:
In vehicle air-conditioning devices including a refrigerant circuit having a compressor, an outdoor heat exchanger, an expansion device, and an indoor heat exchanger that are connected by refrigerant pipes to form a refrigeration cycle; an indoor air-sending device that supplies air to the indoor heat exchanger; and an outdoor air-sending device that supplies air to the outdoor heat exchanger, the refrigerant circuit is installed under the floor of a vehicle and uses carbon dioxide as the refrigerant.
摘要:
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
摘要:
A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.
摘要:
A heat exchanger including plate fins stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in. The heat exchanger exchanges heat between first and second fluids flowing, respectively, inside and outside the heat exchanger tubes. Each of the fins includes a substantially planar main body and cut-raised portions extending from the main body and disposed at an upstream side of flow of the second fluid. Each of the cut-raised portions corresponds to a respective heat exchanger tube and includes first and second opposed side ends connected to the main body of the fin. The first side end is nearer to the corresponding heat exchanger tube than is the second side end, the first side end is longer than the second side end, and the first side end is disposed at a downstream side of the flow of the second fluid, facing the corresponding heat exchanger tube.