Semiconductor memory device and method of forming the same
    31.
    发明申请
    Semiconductor memory device and method of forming the same 失效
    半导体存储器件及其形成方法

    公开(公告)号:US20070295999A1

    公开(公告)日:2007-12-27

    申请号:US11819174

    申请日:2007-06-26

    申请人: Hiroki Murakami

    发明人: Hiroki Murakami

    IPC分类号: H01L27/10 G06F17/50

    摘要: Example embodiments provide a semiconductor memory device and method of forming a semiconductor memory device that may equalize load due to a coupling capacitance between a line and a component signal when the line intersects the component signal in a memory cell array. A line may intersect a memory cell region between a transmitting point (A) and a receiving point (B) of a signal. A line between the transmitting point (A) and the receiving point (B) may be bent at two portions of each of bit lines. Because areas where the line and the bit lines extend parallel to each other may be equal in dimension at each bit line, coupling capacitances between the line and the bit lines may be equalized. The read characteristic may not be affected by the coupling capacitances.

    摘要翻译: 示例性实施例提供一种形成半导体存储器件的半导体存储器件和方法,该半导体存储器件可以在线与元件信号在存储单元阵列中相交时由于线与元件信号之间的耦合电容而使负载均衡。 线可以与信号的发送点(A)和接收点(B)之间的存储单元区域相交。 发送点(A)和接收点(B)之间的线可以在每个位线的两个部分处弯曲。 因为线和位线彼此平行延伸的区域在每个位线处的尺寸可以相等,所以线和位线之间的耦合电容可以相等。 读取特性可能不受耦合电容的影响。

    License management method, information processing apparatus, information processing method, and program
    32.
    发明申请
    License management method, information processing apparatus, information processing method, and program 审中-公开
    许可证管理方法,信息处理装置,信息处理方法和程序

    公开(公告)号:US20070094736A1

    公开(公告)日:2007-04-26

    申请号:US10578859

    申请日:2004-11-15

    IPC分类号: H04N7/16

    摘要: The present invention is directed to an information processing apparatus adapted for processing contents provided by contents distribution service. To contents distributed by a contents server (12), a sublicense which prescribes utilization conditions of the respective contents is added. From a license server (13), a main license which prescribes utilization condition of the entirety of contents distributed via channel that user contracts is provided. When it is instructed that contents are reproduced, reproduction of contents is permitted at a receiver (15) in the case where utilization conditions prescribed by the sublicense and the main license are both satisfied.

    摘要翻译: 本发明涉及适用于处理由内容分发服务提供的内容的信息处理设备。 对于由内容服务器(12)分发的内容,添加了规定各内容的使用条件的再许可。 从许可证服务器(13),主要许可证规定了通过提供用户合同的频道分发的全部内容的使用条件。 在指示再现内容的情况下,在再次认定使用条件和主许可证的情况下,在接收机(15)允许再现内容。

    Method for attaching a fluid container to a fluid ejector in a fluid ejection device
    33.
    发明申请
    Method for attaching a fluid container to a fluid ejector in a fluid ejection device 失效
    将流体容器附接到流体喷射装置中的流体喷射器的方法

    公开(公告)号:US20050168508A1

    公开(公告)日:2005-08-04

    申请号:US10766008

    申请日:2004-01-29

    IPC分类号: B41J2/16 B41J2/175 B41J29/38

    摘要: A method for joining fluid containers and fluid ejectors in a fluid ejecting device are provided. The fluid container includes one or more heat stakes and a substrate includes one or more apertures for receiving the heat stakes and one or more three-dimensional features in the vicinity of the one or more apertures. The fluid ejector and optionally an elastic member are interposed between the fluid container and the substrate. Thermal energy is applied to the one or more heat stakes so that the one or more heat stakes soften to occupy the apertures and three-dimensional features of the substrate and pressure is applied to maintain contact between the fluid container, elastic member, fluid ejector and substrate. The present invention is also directed to substrate including one or more apertures for receiving heat stakes and one or more three-dimensional features in the vicinity of the one or more apertures.

    摘要翻译: 提供了一种在流体喷射装置中连接流体容器和流体喷射器的方法。 流体容器包括一个或多个热桩,并且衬底包括用于接收热桩的一个或多个孔和一个或多个孔附近的一个或多个三维特征。 流体喷射器和可选地弹性构件插入在流体容器和基底之间。 将热能施加到一个或多个热桩上,使得一个或多个热桩软化以占据孔,并且施加衬底的三维特征并施加压力以保持流体容器,弹性构件,流体喷射器和 基质。 本发明还涉及包括用于接收热桩的一个或多个孔和一个或多个孔附近的一个或多个三维特征的衬底。

    Method of producing high-quality silicon single crystals
    34.
    发明授权
    Method of producing high-quality silicon single crystals 有权
    生产高品质硅单晶的方法

    公开(公告)号:US06458204B1

    公开(公告)日:2002-10-01

    申请号:US09717135

    申请日:2000-11-22

    IPC分类号: C30B1520

    摘要: A method of producing high-quality and large-diameter single crystals by the Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as dislocation clusters and laser scattering tomography defects. Specifically, it is a method of producing silicon single crystals which comprises carrying out the crystal pulling while maintaining the solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the peripheral region thereof and while applying a magnetic field, and optionally in addition to the above, while maintaining the temperature gradient in the direction of axis of pulling in the peripheral region at a level lower than that in the central portion in the range of from the melting point to 1,200° C. In this case, it is desirable that the portion of the single crystal surface lying at least 50 mm above the melt surface be shielded from direct radiant heat from the heater and/or crucible wall, that a horizontal magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped magnetic field showing an intensity of 0.02 to 0.07 T at a crucible wall site on the melt surface be applied and that the crucible be rotated at a speed of not more than 5 min−1 and the single crystal at a speed of not less than 13 min−1.

    摘要翻译: 公开了通过Czochralski方法生产高质量和大直径单晶的方法,其可以为晶片提供最少数量的诸如位错簇和激光散射层析成像缺陷的这种生长缺陷。 具体地说,它是一种生产硅单晶的方法,其中包括在拉伸成呈向上凸起的形状的同时保持固溶体界面的同时进行晶体拉伸,其中界面的中心部分高​​于 并且在施加磁场的同时,并且可选地除了上述之外,同时保持在周边区域中的拉动轴线方向上的温度梯度比在中心部分的温度梯度低 熔点为1200℃。在这种情况下,希望在熔体表面上方至少50毫米的单晶表面的部分被屏蔽不受来自加热器和/或坩埚壁的直接辐射热,即水平磁 在熔融表面上的坩埚壁部位处,与熔体表面平行施加0.08〜0.3T的场,或者表示强度为0.02〜0.07T的尖细磁场b 并且坩埚以不超过5分钟-1的速度旋转,并且单晶以不小于13分钟-1的速度旋转。

    Quartz crucible reproducing method
    35.
    发明授权
    Quartz crucible reproducing method 有权
    石英坩埚再生法

    公开(公告)号:US06302957B1

    公开(公告)日:2001-10-16

    申请号:US09670715

    申请日:2000-09-28

    IPC分类号: C30B1500

    摘要: An inner surface of a quartz crucible after being used is cleaned by an acid liquid, and an extraneous material adhered to its inner surface is removed. The inner surface after the extraneous material has been removed is heat treated at 1600° C. or more, and the inner surface where cristobalite formation occurs is recovered into an amorphous state. In this manner, the quartz crucible after being used for growing single crystal silicon is reproduced to a level equal to a new crucible.

    摘要翻译: 使用后的石英坩埚的内表面通过酸液清洗,除去附着在其内表面的外来材料。 将外来材料除去后的内表面在1600℃以上进行热处理,发生方石方的内表面回收成非晶状态。 以这种方式,将用于生长单晶硅的石英坩埚再现到等于新的坩埚的水平。

    Vehicle air-conditioning device
    37.
    发明授权
    Vehicle air-conditioning device 有权
    车用空调装置

    公开(公告)号:US09561703B2

    公开(公告)日:2017-02-07

    申请号:US14113025

    申请日:2011-06-01

    摘要: In vehicle air-conditioning devices including a refrigerant circuit having a compressor, an outdoor heat exchanger, an expansion device, and an indoor heat exchanger that are connected by refrigerant pipes to form a refrigeration cycle; an indoor air-sending device that supplies air to the indoor heat exchanger; and an outdoor air-sending device that supplies air to the outdoor heat exchanger, the refrigerant circuit is installed under the floor of a vehicle and uses carbon dioxide as the refrigerant.

    摘要翻译: 在包括具有压缩机,室外热交换器,膨胀装置和室内热交换器的制冷剂回路的车辆用空调装置中,通过制冷剂管连接而形成制冷循环; 向室内热交换器供给空气的室内送风装置; 以及向室外热交换器供给空气的室外送风装置,将制冷剂回路安装在车辆的地板下方,并使用二氧化碳作为制冷剂。

    FILM FORMATION APPARATUS AND METHOD FOR USING SAME
    39.
    发明申请
    FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
    胶片形成装置及其使用方法

    公开(公告)号:US20100189927A1

    公开(公告)日:2010-07-29

    申请号:US12684283

    申请日:2010-01-08

    CPC分类号: C23C16/4405

    摘要: A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.

    摘要翻译: 使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。 主要的清洗过程是在从反应室内部排出气体的同时,向反应室内供给含有氟的清洗气体,从而蚀刻含有硅的成膜副产物。 后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物,并保留在反应室内,并交替重复多次,将氧化气体供应到反应室中以将含硅氟化物 通过氧化进入中间产物,并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中,以通过氟化氢气体和中间产物之间的反应除去中间产物。

    HEAT EXCHANGER OF PLATE FIN AND TUBE TYPE
    40.
    发明申请
    HEAT EXCHANGER OF PLATE FIN AND TUBE TYPE 有权
    热交换器板和翅片类型

    公开(公告)号:US20090301698A1

    公开(公告)日:2009-12-10

    申请号:US12503141

    申请日:2009-07-15

    IPC分类号: F28D1/04

    CPC分类号: F28F1/325 F28F1/32

    摘要: A heat exchanger including plate fins stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in. The heat exchanger exchanges heat between first and second fluids flowing, respectively, inside and outside the heat exchanger tubes. Each of the fins includes a substantially planar main body and cut-raised portions extending from the main body and disposed at an upstream side of flow of the second fluid. Each of the cut-raised portions corresponds to a respective heat exchanger tube and includes first and second opposed side ends connected to the main body of the fin. The first side end is nearer to the corresponding heat exchanger tube than is the second side end, the first side end is longer than the second side end, and the first side end is disposed at a downstream side of the flow of the second fluid, facing the corresponding heat exchanger tube.

    摘要翻译: 一种热交换器,其包括相对于彼此以相应间隔堆叠的板状翅片以及穿透翅片的热交换器管。热交换器在分别在热交换器管内和外部流动的第一和第二流体之间交换热量。 每个翅片包括基本平坦的主体和从主体延伸并设置在第二流体的流动的上游侧的切割部分。 每个切起部分对应于相应的热交换器管,并且包括连接到翅片的主体的第一和第二相对的侧端。 第一侧端部比第二侧端部更靠近相应的热交换器管,第一侧端部比第二侧端部长,第一侧端部配置在第二流体的流动的下游侧, 面对相应的热交换器管。