公开(公告)号：US20100266868A1

公开(公告)日：2010-10-21

申请号：US12679293

申请日：2008-08-28

申请人： Hideo Kaiju ,  Manabu Ishimaru ,  Yoshihiko Hirotsu ,  Akito Ono ,  Akira Ishibashi

发明人： Hideo Kaiju ,  Manabu Ishimaru ,  Yoshihiko Hirotsu ,  Akito Ono ,  Akira Ishibashi

IPC分类号： B32B15/08 ,  C23C16/00

CPC分类号： C23C14/20 ,  C23C14/26 ,  H01F10/14 ,  H01F10/265 ,  H01F41/20 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/12569 ,  Y10T428/24942 ,  Y10T428/2958 ,  Y10T428/31692 ,  Y10T428/32

摘要： A nickel thin film is formed, for example, to a thickness of 2 nm or more on a polyethylene naphthalate substrate by a vacuum evaporation method. A magnetoresistance effect element using ferromagnetic nano-junction is comprised by using two laminates each comprising a nickel thin film formed on a polyethylene naphthalate substrate, and joining these two laminates so that the nickel thin films cross to each other in such a manner that edges of the nickel thin films face each other.

摘要翻译： 通过真空蒸发法在聚萘二甲酸乙二醇酯基材上形成例如2nm以上的镍薄膜。 使用铁磁性纳米结的磁阻效应元件包括通过使用两个层压体，每个层压体包含在聚萘二甲酸乙二醇酯基材上形成的镍薄膜，并且将这两个层压体接合，使得镍薄膜彼此交叉， 镍薄膜彼此面对。

公开(公告)号：US20070198985A1

公开(公告)日：2007-08-23

申请号：US10592548

申请日：2004-03-16

申请人： Ken Yanagihashi ,  Mamoru Suzuki ,  Takafumi Maeda ,  Akira Ishibashi ,  Yasuchika Nishitani

发明人： Ken Yanagihashi ,  Mamoru Suzuki ,  Takafumi Maeda ,  Akira Ishibashi ,  Yasuchika Nishitani

IPC分类号： G06F9/46

CPC分类号： H02J3/18 ,  Y02E40/30 ,  Y10T307/461

摘要： A power system protection system for preventing a voltage drop resulting from the reactive power characteristic of a power system. A main device for acquiring a system electric quantity of one or a plurality of upper substations detects a voltage drop resulting from the reactive power characteristic of the power system and transmits a detection signal of the voltage drop to a terminal device for acquiring a system electric quantity of one or a plurality of lower substations. Each terminal device sequentially sheds loads starting from those suffering more from the influence of the voltage drop resulting from the reactive power characteristic based on the load voltage and load current of a load bus.

摘要翻译： 一种用于防止由电力系统的无功功率特性引起的电压降的电力系统保护系统。 用于获取一个或多个上变电站的系统电量的主装置检测由电力系统的无功功率特性导致的电压降，并将电压降的检测信号发送到用于获取系统电量的终端装置 一个或多个下部变电站。 每个终端设备从基于负载总线的负载电压和负载电流的无功功率特性引起的电压降的影响更大程度地顺序地释放负载。

公开(公告)号：US07068875B2

公开(公告)日：2006-06-27

申请号：US11105207

申请日：2005-04-13

申请人： Atsushi Toda ,  Hirotaka Akao ,  Akira Ishibashi

发明人： Atsushi Toda ,  Hirotaka Akao ,  Akira Ishibashi

IPC分类号： G02B6/35

CPC分类号： G02F1/133615 ,  G02B6/3504 ,  G02B6/3548 ,  G02B6/3588 ,  G02F1/1326 ,  G02F1/141 ,  G02F2203/026 ,  Y10S385/901

摘要： The present invention provides an optical switch for making part of incident light, which has been made incident on an optical waveguide, selectively emergent to a light emergence portion provided outside the optical waveguide. The optical switch includes a liquid crystal device for selective emergence of the incident light. An arbitrary layer of the liquid crystal device is set such that letting Δn be a difference between a refractive index no of the optical waveguide and a refractive index n1 of the arbitrary layer of the liquid crystal device, “d” be a thickness of the arbitrary layer, and λ be a wavelength of the incident light, the values of Δn, “d”, and λ satisfy a condition of 2.20×10−3≦|Δn·d·λ−1|≦3.03×10−3. With this optical switch, the uniformity of a light emergence efficiency can be easily realized by making use of a small change region in which the light emergence efficiency is not largely varied. The present invention also provides a display unit using the optical switches.

摘要翻译： 本发明提供了一种用于使入射到光波导上的入射光的一部分的光开关选择性地出射到设置在光波导外部的光出射部分。 光开关包括用于选择性地出射入射光的液晶装置。 液晶装置的任意层被设定为使得Deltan是光波导的折射率n _{0和任意的折射率n <1的折射率之间的差 液晶装置的层，“d”为任意层的厚度，λ为入射光的波长，Deltan，“d”和λ的值满足2.20×10 -3的条件 <= | Deltan.d.lambda | <= 3.03×10 -3。 利用该光学开关，通过利用光出射效率没有很大变化的小变化区域，可以容易地实现光出射效率的均匀性。 本发明还提供一种使用光开关的显示单元。}

公开(公告)号：US06859569B2

公开(公告)日：2005-02-22

申请号：US09822123

申请日：2001-03-30

申请人： Akira Ishibashi ,  Eriko Matsui ,  Hirotaka Akao ,  Atsushi Toda

发明人： Akira Ishibashi ,  Eriko Matsui ,  Hirotaka Akao ,  Atsushi Toda

IPC分类号： H04N9/12 ,  G06F3/00 ,  G06F3/01 ,  G09F9/00 ,  G09F9/30 ,  G09F19/00 ,  G02B6/00

CPC分类号： G06F3/011 ,  Y10S385/901

摘要： An information receiving/display apparatus, which can receive and display third sensory information such as tactual information or olfactory information in addition to visual and/or audio information. A number of image display optical fibers and tactual representation fibers both having cores made of a liquid are arranged in alignment, and a number of image display control signal lines and tactual representation control signal lines made of piezoelectric element are aligned across the fibers, thereby to form the information receiving/display apparatus.

摘要翻译： 一种信息接收/显示装置，除了可视和/或音频信息之外，还可以接收和显示诸如触觉信息或嗅觉信息之类的第三感觉信息。 将由液体构成的芯片的多个图像显示光纤和触觉表示光纤配置成对准，并且由压电元件构成的多个图像显示控制信号线和触觉表示控制信号线在光纤之间排列，从而 形成信息接收/显示装置。

公开(公告)号：US06754408B2

公开(公告)日：2004-06-22

申请号：US10044461

申请日：2001-10-23

申请人： Atsushi Toda ,  Hirotaka Akao ,  Akira Ishibashi

发明人： Atsushi Toda ,  Hirotaka Akao ,  Akira Ishibashi

IPC分类号： G02B635

CPC分类号： G02F1/133615 ,  G02B6/3504 ,  G02B6/3548 ,  G02B6/3588 ,  G02F1/1326 ,  G02F1/141 ,  G02F2203/026 ,  Y10S385/901

摘要： The present invention provides an optical switch for making part of incident light, which has been made incident on an optical waveguide, selectively emergent to a light emergence portion provided outside the optical waveguide. The optical switch includes a liquid crystal device for selective emergence of the incident light. An arbitrary layer of the liquid crystal device is set such that letting &Dgr;n be a difference between a refractive index n0 of the optical waveguide and a refractive index n1 of the arbitrary layer of the liquid crystal device, “d” be a thickness of the arbitrary layer, and &lgr; be a wavelength of the incident light, the values of &Dgr;n, “d”, and &lgr; satisfy a condition of 2.20×10−3≦|&Dgr;n·d·&lgr;−1|≦3.03×10−3. With this optical switch, the uniformity of a light emergence efficiency can be easily realized by making use of a small change region in which the light emergence efficiency is not largely varied. The present invention also provides a display unit using the optical switches.

摘要翻译： 本发明提供了一种用于使入射到光波导上的入射光的一部分的光开关选择性地出射到设置在光波导外部的光出射部分。 光开关包括用于选择性地出射入射光的液晶装置。 液晶装置的任意层被设定为使Deltan为光波导的折射率n0与液晶装置的任意层的折射率n1之差，“d”为任意的厚度 层和λ是入射光的波长，Deltan，“d”和λ的值满足条件为2.20×10 -3 <= |Deltan.d.λ1 || = 3.03×10 <-3>。 利用该光学开关，通过利用光出射效率没有很大变化的小变化区域，可以容易地实现光出射效率的均匀性。 本发明还提供一种使用光开关的显示单元。

公开(公告)号：USRE38339E1

公开(公告)日：2003-12-02

申请号：US09590647

申请日：2000-06-08

申请人： Masakazu Ukita ,  Akira Ishibashi

发明人： Masakazu Ukita ,  Akira Ishibashi

IPC分类号： H01S532

CPC分类号： B82Y20/00 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/028 ,  H01S5/0421 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347

摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(&OHgr;) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature To(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/To)IthVth &bgr;≡(Rt/To)RSIth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((21n t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

公开(公告)号：US06438298B1

公开(公告)日：2002-08-20

申请号：US09616687

申请日：2000-07-14

申请人： Eriko Matsui ,  Akira Ishibashi ,  Yoshifumi Mori

发明人： Eriko Matsui ,  Akira Ishibashi ,  Yoshifumi Mori

IPC分类号： G02B626

CPC分类号： G02B6/2852 ,  G02B6/125

摘要： An optical device includes a plurality of first optical waveguides (or optical fibers) arranged in the horizontal direction; a plurality of second optical waveguides (or optical fibers) arranged on the same plane as the plane on which the first optical waveguides (or optical fibers) are arranged, the second optical waveguides (or optical fibers) being perpendicular or nearly perpendicular to the first optical waveguides (or optical fibers); and elements to be excited by light rays waveguided in the first and second optical waveguides(or optical fibers), the elements being arranged at crossing portions at which the first and second optical waveguides (or optical fibers) cross each other. In this display, the elements to be excited are selected for each line by intensities of light rays in the first optical waveguides (or optical fibers) functioning as horizontal waveguides (or optical fibers), and light rays in the second waveguides (or optical fibers) functioning as vertical waveguides (or optical fibers) are modulated in intensity on the basis of data signals, and the data signal light rays whose intensities have been modulated are extracted to the outside via the selected elements to be excited.

摘要翻译： 光学装置包括沿水平方向布置的多个第一光波导（或光纤）; 布置在与其上布置有第一光波导（或光纤）的平面相同的平面上的多个第二光波导（或光纤），第二光波导（或光纤）垂直于或几乎垂直于第一光波导 光波导（或光纤）; 以及要在第一和第二光波导（或光纤）中波导的光线激发的元件，元件布置在第一和第二光波导（或光纤）彼此交叉的交叉部分。 在该显示中，通过用作水平波导（或光纤）的第一光波导（或光纤）中的光线的强度，针对每一行选择要激发的元件，并且第二波导（或光纤）中的光线 ）作为垂直波导（或光纤）的功能在数据信号的基础上进行强度调制，并且已经调制了强度的数据信号光线经由被激励的选定元件提取到外部。

公开(公告)号：US5872023A

公开(公告)日：1999-02-16

申请号：US829214

申请日：1997-03-31

申请人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

发明人： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

摘要翻译： 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成 作为S，Se，Te。 第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

公开(公告)号：US5625634A

公开(公告)日：1997-04-29

申请号：US275374

申请日：1994-07-15

申请人： Masakazu Ukita ,  Akira Ishibashi

发明人： Masakazu Ukita ,  Akira Ishibashi

IPC分类号： H01S5/00 ,  H01S5/024 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/323 ,  H01S5/327 ,  H01S5/343 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/024 ,  H01S5/06209 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0421

摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (Q) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by:.alpha..ident.(R.sub.t /T.sub.0)I.sub.th v.sub.th.beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((2ln t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

摘要翻译： 半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层，有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q） 上升之后，具有热阻Rt（K / W）和特征温度T0（K）。 当α和β的两个量定义为：α=（Rt / T0）Ithvth beta =（Rt / T0）RSIth2点（α，β）存在于由直线α= 0，直线β= 0以及具有t作为参数的曲线（（2ln t-1）/ t，（1-ln t）/ t2）。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

公开(公告)号：US5247223A

公开(公告)日：1993-09-21

申请号：US723974

申请日：1991-07-01

申请人： Yoshifumi Mori ,  Akira Ishibashi

发明人： Yoshifumi Mori ,  Akira Ishibashi

IPC分类号： H01J9/02 ,  H01J21/10 ,  H01J1/30

CPC分类号： H01J21/105 ,  H01J9/025

摘要： A quantum interference semiconductor device using the interference effect of electron waves has a cathode, an anode, and a gate which are mounted in a vacuum. An electron wave which is emitted from the cathode into the vacuum is divided into a plurality of electron waves and, subsequently, the plurality of electron waves are combined at the anode. Phase differences among the plurality of electron waves are controlled by the gate, thereby making the device operative.

摘要翻译： 使用电子束的干涉效应的量子干涉半导体器件具有安装在真空中的阴极，阳极和栅极。 从阴极发射到真空中的电子波被分成多个电子波，随后在阳极处组合多个电子波。 多个电子波之间的相位差由栅极控制，从而使器件工作。