公开(公告)号：US11728168B2

公开(公告)日：2023-08-15

申请号：US17220441

申请日：2021-04-01

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC classification number: H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US11094544B2

公开(公告)日：2021-08-17

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10811303B2

公开(公告)日：2020-10-20

申请号：US16259175

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20200243382A1

公开(公告)日：2020-07-30

申请号：US16848754

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/3213 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/02 ,  H01L21/285 ,  H01L27/11556 ,  H01L23/528 ,  H01L21/311

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US10699952B2

公开(公告)日：2020-06-30

申请号：US16394731

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L21/762 ,  H01L21/3213 ,  H01L21/266

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US10410865B2

公开(公告)日：2019-09-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190252252A1

公开(公告)日：2019-08-15

申请号：US16394731

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/762

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20190252206A1

公开(公告)日：2019-08-15

申请号：US16394724

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/321 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L21/32115 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/32051 ,  H01L21/32135 ,  H01L21/32136

Abstract: Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.

公开(公告)号：US10354916B2

公开(公告)日：2019-07-16

申请号：US15986189

申请日：2018-05-22

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/285 ,  H01L21/02 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US10192775B2

公开(公告)日：2019-01-29

申请号：US15461847

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L21/768 ,  H01L23/31

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).