公开(公告)号：US10971364B2

公开(公告)日：2021-04-06

申请号：US16219557

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: C23C16/32 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US10599043B2

公开(公告)日：2020-03-24

申请号：US15675101

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： Hiroyuki Ogiso ,  Jianhua Zhou ,  Zonghui Su ,  Juan Carlos Rocha-Alvarez ,  Jeongmin Lee ,  Karthik Thimmavajjula Narasimha ,  Rick Gilbert ,  Sang Heon Park ,  Abdul Aziz Khaja ,  Vinay Prabhakar

IPC: H01L21/26 ,  H01L21/66 ,  G03F7/20 ,  G03F7/16 ,  H01L21/02 ,  H01L21/683 ,  C23C16/52 ,  H01L21/12

Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.

公开(公告)号：US11728168B2

公开(公告)日：2023-08-15

申请号：US17220441

申请日：2021-04-01

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

CPC classification number: H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US12211694B2

公开(公告)日：2025-01-28

申请号：US18206514

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/033 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US11031262B2

公开(公告)日：2021-06-08

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US10418243B2

公开(公告)日：2019-09-17

申请号：US15233351

申请日：2016-08-10

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US10403515B2

公开(公告)日：2019-09-03

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC: C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.