公开(公告)号：US11264460B2

公开(公告)日：2022-03-01

申请号：US16519246

申请日：2019-07-23

Applicant: Applied Materials, Inc.

Inventor： Arvind Kumar ,  Sanjeev Manhas ,  Mahendra Pakala ,  Ellie Y. Yieh

IPC: H01L29/10 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/04 ,  H01L27/11556 ,  H01L27/11582

Abstract: The present disclosure provides methods for forming a channel structure in a film stack for manufacturing three dimensional (3D) stacked memory cell semiconductor devices. In one embodiment, a memory cell device includes a film stack comprising alternating pairs of dielectric layers and conductive structures horizontally formed on a substrate, and a channel structure formed in the film stack, wherein the channel structure is filled with a channel layer and a protective blocking layer, wherein the channel layer has a gradient dopant concentration along a vertical stacking of the film stack.

公开(公告)号：US11145808B2

公开(公告)日：2021-10-12

申请号：US16681351

申请日：2019-11-12

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Minrui Yu ,  Chando Park ,  Mang-Mang Ling ,  Jaesoo Ahn ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Mahendra Pakala ,  Ellie Y. Yieh

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.

公开(公告)号：US20210234091A1

公开(公告)日：2021-07-29

申请号：US16752013

申请日：2020-01-24

Applicant: APPLIED Materials, Inc.

Inventor： Jong Mun Kim ,  Mang-Mang Ling ,  Soham Asrani ,  Lin Xue ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L43/12 ,  H01L43/10

Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.

公开(公告)号：US20210189555A1

公开(公告)日：2021-06-24

申请号：US17120494

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C09D1/00 ,  C23C16/50 ,  C23C16/44

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US10916426B2

公开(公告)日：2021-02-09

申请号：US16403088

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/02 ,  H01L21/67 ,  C01B19/00

Abstract: Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX2, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).

公开(公告)号：US10825665B2

公开(公告)日：2020-11-03

申请号：US14703922

申请日：2015-05-05

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Huixiong Dai ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Nitin Krishnarao Ingle

IPC: H01J37/32 ,  H01J37/305 ,  H01J37/317

Abstract: Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.

公开(公告)号：US10586707B2

公开(公告)日：2020-03-10

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/46 ,  C23C16/42 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

公开(公告)号：US10570506B2

公开(公告)日：2020-02-25

申请号：US15820777

申请日：2017-11-22

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Jingjing Liu ,  Zhong Qiang Hua ,  Chentsau Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/02 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.

公开(公告)号：US10269571B2

公开(公告)日：2019-04-23

申请号：US15648163

申请日：2017-07-12

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Shiyu Sun ,  Sean S. Kang ,  Nam Sung Kim ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L29/423 ,  H01L29/06 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L29/66

Abstract: The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

公开(公告)号：US20180342384A1

公开(公告)日：2018-11-29

申请号：US15605751

申请日：2017-05-25

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Sean Kang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/34 ,  C23C16/56

Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.