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    Scanned probe microscopy (SPM) probe having angled tip
    33.
    发明授权
    Scanned probe microscopy (SPM) probe having angled tip 有权
    具有倾斜尖端的扫描探针显微镜（SPM）探针

    公开(公告)号：US08539611B1

    公开(公告)日：2013-09-17

    申请号：US13547378

    申请日：2012-07-12

    Applicant: Mark C. Reuter ,  Brian A. Bryce ,  Bojan R. Ilic ,  Sandip Tiwari

    Inventor： Mark C. Reuter ,  Brian A. Bryce ,  Bojan R. Ilic ,  Sandip Tiwari

    IPC: G01Q60/38 ,  H01L21/306 ,  B82Y40/00

    CPC classification number: G01Q70/10 ,  B82Y15/00 ,  G01Q70/12

    Abstract: A method of creating a probe for scanned probe microscopy is disclosed. The method includes providing a wafer having a support wafer layer and a device layer. The method includes masking the wafer with a masking layer. The method includes removing a portion of the masking layer at the device layer. The method includes etching the wafer along the portion of the masking layer that has been removed to create a crystal facet surface that is oriented at a tilt angle. The method includes epitaxially growing a tip along the crystal facet surface.

    Abstract translation: 公开了一种创建用于扫描探针显微镜的探针的方法。 该方法包括提供具有支撑晶片层和器件层的晶片。 该方法包括用掩模层掩蔽晶片。 该方法包括在器件层处去除掩模层的一部分。 该方法包括沿着被去除的掩模层的部分蚀刻晶片以产生以倾斜角定向的晶面表面。 该方法包括沿着晶面表面外延生长尖端。

    SILICONE IONOMER COMPOSITION
    34.
    发明申请
    SILICONE IONOMER COMPOSITION 有权
    硅胶离子组合物

    公开(公告)号：US20130172193A1

    公开(公告)日：2013-07-04

    申请号：US13343188

    申请日：2012-01-04

    Applicant: Anubhav Saxena ,  Alok Sarkar ,  Sandip Tiwari

    Inventor： Anubhav Saxena ,  Alok Sarkar ,  Sandip Tiwari

    IPC: C08G77/28

    CPC classification number: C08G77/26 ,  A01N25/10 ,  A01N25/24 ,  A01N25/30 ,  A61K8/894 ,  A61K8/895 ,  A61K8/898 ,  A61K8/899 ,  A61K2800/10 ,  A61Q19/00 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08G77/24 ,  C08G77/28 ,  C08G77/46 ,  C09D5/14 ,  C09D5/1675 ,  C09D183/06 ,  C09D183/08 ,  C09D183/12

    Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj  (I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix-Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3−, carboxylate —COO−, phosphonate —PO32− group and phosphate —OPO32−, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R′—NR″2+—R′″—I  (III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2≦a+b+c+d+e+f+g+h+i+j≦6000, b+e+h>0 and c+f+i>0.

    Abstract translation: 本文提供了包含式（I）的硅氧烷：M1aM2bM3cD1dD2eD3fT1gT2hT3iQj（I）的官能化离子硅氧烷组合物，其含有带有离子对的一价基团并具有式（II）：-A-Ix-Mny +; 其中A是具有选自二价烃或烃氧基的至少2个间隔原子的间隔基团，其中I是离子基团，例如磺酸酯-SO 3 - ，羧酸酯-COO-，膦酸酯-PO 32 - 基团和磷酸酯-OPO 32 - 其中M是氢或独立地选自碱金属，碱土金属，过渡金属，金属，季铵和鏻基的阳离子; 或者具有式（III）的两性离子：-R'-NR''2 + -R“'-I（III）其中I如上所定义，其中下标a，b，c，d，e， 受限于以下限制，f，g，h，i，j为零或正数：2 @ a + b + c + d + e + f + g + h + i + j @ 6000，b + e + h> 0 和c + f + i> 0。

    Novel nanoemulsion formulations
    35.
    发明申请
    Novel nanoemulsion formulations 审中-公开
    新型纳米乳液制剂

    公开(公告)号：US20070148194A1

    公开(公告)日：2007-06-28

    申请号：US11606641

    申请日：2006-11-29

    Applicant: Mansoor Amiji ,  Sandip Tiwari

    Inventor： Mansoor Amiji ,  Sandip Tiwari

    IPC: A61K9/00

    CPC classification number: A61K9/1075 ,  A61K9/0095

    Abstract: An oil-in-water nanoemulsion delivery system that includes at least one oil having a concentration of greater than or equal to 2% (w/w) of at least one polyunsaturated fatty acid, preferably of the omega-3 or omega-6 family, is disclosed. The delivery system further includes at least one emulsifier and also an aqueous phase. Preferably, one or more hydrophobic therapeutic, monitoring and/or diagnostic agents are dispersed in the oil phase. The nanoemulsions may optionally contain other conventional pharmaceutical aids such as stabilizers, preservatives, buffering agents, antioxidants, polymers, proteins and charge inducing agents. The invention also relates to a process for preparing the nanoemulsions and to their use in the oral, parenteral, opthalmic, nasal, rectal or topical delivery of hydrophobic therapeutic, monitoring or diagnostic agents.

    Abstract translation: 包含至少一种浓度大于或等于2％（w / w）的至少一种多不饱和脂肪酸，优选ω-3或ω-6家族的油的水包油纳米乳剂递送系统 ，被披露。 递送系统还包括至少一种乳化剂和水相。 优选地，将一种或多种疏水治疗，监测和/或诊断剂分散在油相中。 纳米乳剂可以任选地含有其它常规药物辅助剂，例如稳定剂，防腐剂，缓冲剂，抗氧化剂，聚合物，蛋白质和电荷诱导剂。 本发明还涉及制备纳米乳剂的方法及其在口服，肠胃外，眼内，鼻腔，直肠或局部递送疏水性治疗，监测或诊断剂中的用途。

    Molecular memory & logic
    36.
    发明授权
    Molecular memory & logic 失效
    分子记忆与逻辑

    公开(公告)号：US06750471B2

    公开(公告)日：2004-06-15

    申请号：US10205529

    申请日：2002-07-25

    Applicant: Donald Stimson Bethune ,  Sandip Tiwari

    Inventor： Donald Stimson Bethune ,  Sandip Tiwari

    IPC: H01L3524

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/0014 ,  G11C23/00 ,  G11C2213/17 ,  H01L27/283 ,  H01L51/0046 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/943

    Abstract: The present invention is directed to a microelectric device and especially a Field effect transistor comprising a source, drain, channel, an insulating layer overlying said channel containing at least one closed cage molecule, said closed cage molecule being capable of exhibiting a Coulomb blockade effect upon application of a voltage between said source and drain. Two different microelectronic devices are described containing the closed cage molecule, a logic cell and a memory cell.

    Abstract translation: 本发明涉及一种微电子器件，特别是一种场效应晶体管，其包括源极，漏极，沟道，覆盖所述沟道的绝缘层，所述绝缘层包含至少一个闭合笼状分子，所述封闭笼分子能够表现出库仑阻塞效应 在所述源极和漏极之间施加电压。 描述了包含封闭笼分子，逻辑单元和存储单元的两种不同的微电子器件。

    Patterned SOI regions in semiconductor chips
    37.
    发明授权
    Patterned SOI regions in semiconductor chips 有权
    半导体芯片中的图案化SOI区域

    公开(公告)号：US06333532B1

    公开(公告)日：2001-12-25

    申请号：US09356295

    申请日：1999-07-16

    Applicant: Bijan Davari ,  Devendra Kumar Sadana ,  Ghavam G. Shahidi ,  Sandip Tiwari

    Inventor： Bijan Davari ,  Devendra Kumar Sadana ,  Ghavam G. Shahidi ,  Sandip Tiwari

    IPC: H01L27108

    CPC classification number: H01L27/10894 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/76243 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76286 ,  H01L21/84 ,  H01L27/10861 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/945 ,  Y10S257/904

    Abstract: A method and structure for forming patterned SOI regions and bulk regions is described wherein a silicon containing layer over an insulator may have a plurality of selected thickness' and wherein bulk regions may be suitable to form DRAM's and SOI regions may be suitable to form merged logic such as CMOS. Ion implantation of oxygen is used to formed patterned buried oxide layers at selected depths and mask edges may be shaped to form stepped oxide regions from one depth to another. Trenches may be formed through buried oxide end regions to remove high concentrations of dislocations in single crystal silicon containing substrates. The invention overcomes the problem of forming DRAM with a storage capacitor formed with a deep trench in bulk Si while forming merged logic regions on SOI.

    Abstract translation: 描述了用于形成图案化SOI区域和体积区域的方法和结构，其中绝缘体上的含硅层可以具有多个选定的厚度，并且其中体积区域可适于形成DRAM，并且SOI区域可适合于形成合并逻辑 如CMOS。 氧离子注入用于在所选择的深度处形成图案化的掩埋氧化物层，并且掩模边缘可被成形为从一个深度到另一个深度形成阶梯状氧化物区域。 可以通过掩埋氧化物端部区域形成沟槽，以去除含有单晶硅的衬底中的高浓度位错。 本发明克服了在形成SOI上的合并逻辑区域的同时形成具有在体Si中的深沟槽的存储电容器形成DRAM的问题。

    Nano-structure memory device
    38.
    发明授权
    Nano-structure memory device 失效
    纳米结构存储器件

    公开(公告)号：US5937295A

    公开(公告)日：1999-08-10

    申请号：US947283

    申请日：1997-10-07

    Applicant: Wei Chen ,  Theoren Perlee Smith, III ,  Sandip Tiwari

    Inventor： Wei Chen ,  Theoren Perlee Smith, III ,  Sandip Tiwari

    IPC: H01L27/10 ,  B82B1/00 ,  G11C11/56 ,  G11C16/04 ,  H01L21/336 ,  H01L21/8247 ,  H01L29/06 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

    CPC classification number: H01L21/28273 ,  B82Y10/00 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/0408 ,  H01L29/66825 ,  H01L29/7887 ,  H01L29/7888 ,  G11C2216/08 ,  Y10S438/962

    Abstract: A memory device and memory incorporating a plurality of the memory devices is described wherein each memory device has spaced apart source and drain regions, a channel, a barrier insulating layer, a nanocrystal or a plurality of nanocrystals, a control barrier layer, and a gate electrode. The nanocrystal which may be a quantum dot, stores one electron or hole or a discrete number of electrons or holes at room temperature to provide threshold voltage shifts in excess of the thermal voltage for each change in electron or hole stored. The invention utilizes Coulomb blockade in electrostatically coupling one or more stored electrons or holes to a channel while avoiding in-path Coulomb-blockade controlled conduction for sensing the stored charge.

    Abstract translation: 一种存储装置和存储器，其中包括多个存储器件，其中每个存储器件具有间隔开的源极和漏极区，通道，阻挡绝缘层，纳米晶体或多个纳米晶体，控制势垒层和栅极 电极。 可以是量子点的纳米晶体在室温下存储一个电子或空穴或离散数量的电子或空穴，以为电子或空穴存储的每个变化提供超过热电压的阈值电压偏移。 本发明利用库仑阻塞将一个或多个存储的电子或空穴静电耦合到通道，同时避免路径中的库仑阻塞控制传导以感测存储的电荷。

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