公开(公告)号：US20150318311A1

公开(公告)日：2015-11-05

申请号：US14348434

申请日：2013-12-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jun Cheng ,  Haijing Chen ,  Chunsheng Jiang

IPC: H01L27/12 ,  H01L21/467 ,  H01L29/45 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/467 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display device. The array substrate includes a plurality of pixel units, each of which includes: a TFT area provided with a TFT including a gate, a gate insulation layer, an active area, a source and a drain; and a display area provided with a pixel electrode.

Abstract translation: 本发明提供一种阵列基板及其制造方法，显示面板和显示装置。 阵列基板包括多个像素单元，每个像素单元包括：TFT区域，其设置有包括栅极，栅极绝缘层，有源区域，源极和漏极的TFT; 以及设置有像素电极的显示区域。

公开(公告)号：US10991724B2

公开(公告)日：2021-04-27

申请号：US16227012

申请日：2018-12-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang

IPC: H01L27/12 ,  H01L27/092 ,  H01L29/22 ,  H01L29/36

Abstract: The present disclosure provides a CMOS transistor and a method for fabricating the same, a display panel and a display device. The method includes: forming a first gate electrode, a second gate electrode, a first active layer, a second active layer, a first source electrode, a second source electrode, a first drain electrode and a second drain electrode on a base substrate; and injecting first dopant ions into the first active layer and injecting second dopant ions into the second active layer by a doping process, wherein a concentration of the first dopant ions is smaller than that of the second dopant ions, the first active layer is an n-type active layer, and the second active layer is a p-type active layer.

公开(公告)号：US09960189B2

公开(公告)日：2018-05-01

申请号：US15436141

申请日：2017-02-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Zhao ,  Chunsheng Jiang ,  Guangcai Yuan

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02565 ,  H01L21/426 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.

公开(公告)号：US09698278B2

公开(公告)日：2017-07-04

申请号：US14421967

申请日：2014-04-10

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunsheng Jiang

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/425 ,  H01L21/426 ,  H01L21/477

CPC classification number: H01L29/78696 ,  H01L21/425 ,  H01L21/426 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: There are provided a thin film transistor and a manufacturing method thereof, an array substrate, a display device. The manufacturing method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate. The forming the metal oxide semiconductor active layer includes forming a zinc oxide-based binary metal oxide pattern layer on a substrate. The pattern layer includes a first pattern, a second pattern and a third pattern. Metal doping ions are implanted into the zinc oxide-based binary metal oxide pattern layer by using an ion implantation technology, so that a binary metal oxide of the third pattern is transformed into a multi-element metal oxide semiconductor, and the metal oxide semiconductor active layer is formed.

公开(公告)号：US09691836B2

公开(公告)日：2017-06-27

申请号：US14769456

申请日：2014-12-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang ,  Jingfei Fang ,  Baojiang Zhang

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/56 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L27/3274 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/4908 ,  H01L29/7869 ,  H01L51/56

Abstract: A pixel unit is used in an array substrate of a display device. In one embodiment, it comprises a gate line, a source-drain line and a thin-film transistor; and the gate line is in an overlapped structure comprising a first MoW layer, a Cu layer and a second MoW layer overlapped successively; and a gate of the thin-film transistor is formed of the first MoW layer. In another embodiment, the source-drain line is in a same overlapped structure; and a source and a drain of the thin-film transistor are formed of the first MoW layer. The first embodiment is achieved by means of a halftone process while the second embodiment is achieved by means of a lift off process. Diffusion of Cu in the gate layer or in the source-drain layer towards the oxide active layer is prevented. Also disclosed is a method for manufacturing the abovementioned pixel unit, an array substrate comprising the abovementioned pixel unit, a display device comprising the abovementioned pixel unit, and a method for manufacturing abovementioned array substrate and display device.

公开(公告)号：US09640553B2

公开(公告)日：2017-05-02

申请号：US14762076

申请日：2014-11-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunsheng Jiang

IPC: H01L21/20 ,  H01L21/36 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1214 ,  H01L27/1259 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L2029/42388

Abstract: A thin-film transistor (TFT), a manufacturing method thereof, an array substrate and a display device are disclosed. The method for manufacturing the a TFT comprises the step of forming a gate electrode, a gate insulating layer, an active area, a source electrode and a drain electrode on a base substrate. The active area (4) is made of a ZnON material. When the gate insulating layer is formed, a material for forming the gate insulating layer is subjected to control treatment, so that a sub-threshold amplitude of the TFT is less than or equal to 0.5 mV/dec. The manufacturing method reduces the sub-threshold amplitude of the TFT and improves the semiconductor characteristic of the TFT.

公开(公告)号：US20160300869A1

公开(公告)日：2016-10-13

申请号：US15068928

申请日：2016-03-14

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei Liu ,  Chunsheng Jiang

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/49 ,  H01L21/471 ,  H01L21/475 ,  H01L29/45 ,  H01L29/66 ,  H01L21/473

CPC classification number: H01L27/1296 ,  H01L27/1225 ,  H01L29/0649 ,  H01L29/45 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78693

Abstract: Embodiments of the present invention disclose an array substrate, a method of manufacturing an array substrate and a display device, which belong to field of display technology. The method includes: forming a gate metal pattern and a gate insulating layer in turn on a base substrate; forming a source-drain metal pattern that is made of a preset metal on the base substrate, on which the gate insulating layer is formed, the source-drain metal pattern comprising a source electrode and a drain electrode and the preset metal including at least copper; forming a silicon nitride layer and a silicon oxide layer in turn on the base substrate, which compose a passivation layer; forming a trench in the passivation layer at a position corresponding to a gap between the source electrode and the drain electrode, wherein a width of the trench in the silicon oxide layer is smaller than a width of the trench in the silicon nitride layer and is larger than or equal to a distance of the gap between the source electrode and the drain electrode; forming an oxide trench pattern on the source-drain metal pattern, with is not in contact with the silicon nitride layer. The present invention solves problems of high-degree oxidation of copper metal layer and poorer display performance of an existing array substrate, and achieves advantages of reducing oxidation of copper metal layer and improving display performance of the array substrate for a display device.

Abstract translation: 本发明的实施例公开了属于显示技术领域的阵列基板，阵列基板的制造方法和显示装置。 该方法包括：依次在基底基板上形成栅极金属图案和栅极绝缘层; 在其上形成有栅极绝缘层的基底基板上形成由预置金属制成的源极 - 漏极金属图案，所述源极 - 漏极金属图案包括源极和漏极，并且所述预设金属至少包括铜 ; 依次在形成钝化层的基底上形成氮化硅层和氧化硅层; 在与源电极和漏电极之间的间隙相对应的位置处在钝化层中形成沟槽，其中氧化硅层中的沟槽的宽度小于氮化硅层中的沟槽的宽度并且较大 不大于或等于源电极和漏电极之间的间隙的距离; 在源极 - 漏极金属图案上形成氧化物沟槽图案，其不与氮化硅层接触。 本发明解决了铜金属层的高度氧化和现有阵列基板的显示性能差的问题，并且具有减少铜金属层的氧化和提高显示装置的阵列基板的显示性能的优点。

公开(公告)号：US09425400B2

公开(公告)日：2016-08-23

申请号：US14241723

申请日：2013-12-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wulin Shen ,  Chunsheng Jiang ,  Qing Dai ,  Haijing Chen ,  Guangcai Yuan ,  Jingang Fang

IPC: H01L51/00 ,  H01L21/56 ,  B05B5/03 ,  B05B5/00 ,  C23C14/24 ,  C23C14/32 ,  C23C14/12 ,  B05B5/053 ,  B05D1/00 ,  H01L51/56 ,  C23C14/04 ,  C23C14/30

CPC classification number: H01L51/0013 ,  B05B5/001 ,  B05B5/0255 ,  B05B5/03 ,  B05B5/0533 ,  B05B5/057 ,  B05D1/007 ,  B05D1/60 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/30 ,  C23C14/32 ,  H01L51/001 ,  H01L51/0011 ,  H01L51/56

Abstract: An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.

Abstract translation: 公开了一种用于涂覆有机膜的设备和方法。 该装置包括蒸发装置，电子发射装置和喷射装置; 其中所述蒸发装置包括蒸发容器，所述蒸发容器是线性蒸发容器，其中产生均匀的有机气体; 电子发射装置水平地布置在蒸发容器上，使得蒸发容器中蒸发的有机气体均匀充电并成为带电的有机气体; 喷射装置设置有电场，使带电的有机气体朝向基板移动，以将有机膜沉积在基板上。

公开(公告)号：US09373814B2

公开(公告)日：2016-06-21

申请号：US14360190

申请日：2013-12-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Liu ,  Chunsheng Jiang ,  Dongfang Wang ,  Yanzhao Li

IPC: H01L33/00 ,  H01L51/52 ,  H01L51/56 ,  H01L27/32 ,  H01L21/84 ,  H01L51/50 ,  H01L51/00

CPC classification number: H01L51/5253 ,  H01L21/84 ,  H01L27/3206 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L51/0012 ,  H01L51/5036 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303

Abstract: A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL (21) and a second PDL (22) overlapped on the first PDL. The first PDL (21) is a hydrophobic film layer provided with openings (210) corresponding to luminous regions of sub-pixel units; and the second PDL (22) is a hydrophilic film layer provided with openings (220) corresponding to the openings (210) of the first PDL. The PDL can avoid the mutual pollution of organic light-emitting materials in luminous regions of different colors in adjacent sub-pixel units in the preparation process.

Abstract translation: 有机发光二极管（OLED）显示面板的像素限定层（PDL），其包括在第一PDL上重叠的第一PDL（21）和第二PDL（22）。 第一PDL（21）是设置有对应于子像素单元的发光区域的开口（210）的疏水膜层; 并且第二PDL（22）是设置有对应于第一PDL的开口（210）的开口（220）的亲水膜层。 PDL可以避免在准备过程中相邻子像素单元中不同颜色的发光区域中有机发光材料的相互污染。

公开(公告)号：US09368637B2

公开(公告)日：2016-06-14

申请号：US14348763

申请日：2013-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Li Zhang ,  Chunsheng Jiang ,  Dongfang Wang ,  Haijing Chen ,  Fengjuan Liu

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78693

Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，阵列基板和显示装置。 薄膜晶体管包括基板; 形成在所述基板上的有源层; 第一导电接触层和形成在有源层上的第二导电接触层; 形成在所述第一接触层和所述第二接触层上的蚀刻停止层; 以及与第一接触层连接的源极，与第二接触层连接的漏极和布置在蚀刻停止层上形成的源极和漏极之间的栅极。 TFT具有结构简单，性能更好的特点。