公开(公告)号：US20180190831A1

公开(公告)日：2018-07-05

申请号：US15529645

申请日：2016-05-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Liangchen YAN

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L21/3213 ,  H01L27/12

CPC classification number: H01L29/78675 ,  H01L21/32136 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618

Abstract: The present disclosure provides a Thin Film Transistor and a method for manufacturing the same, an array substrate and a display device, so as to increase on-state currents of the Thin Film Transistor and improve current characteristics of the Thin Film Transistor. The Thin Film Transistor includes a base substrate, a gate insulating layer and a gate disposed above the base substrate; wherein a conductive layer is also disposed between the gate insulating layer and the gate; wherein the projection of the conductive layer on the base substrate is larger than the projection of the gate on the base substrate.

公开(公告)号：US20170092660A1

公开(公告)日：2017-03-30

申请号：US15122902

申请日：2015-07-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/47635 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present disclosure provides a metal oxide thin film transistor, wherein an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material is provided between an active layer and a source, and/or between the active layer and a drain. The standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer. The present disclosure further provides a display substrate comprising the metal oxide thin film transistor and a display device comprising the display substrate.

公开(公告)号：US20160336452A1

公开(公告)日：2016-11-17

申请号：US14905375

申请日：2015-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG

IPC: H01L29/786 ,  H01L21/383 ,  H01L27/12 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/383 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969

Abstract: The present invention provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor comprises a gate, an active layer, a source and a drain formed on a substrate, the active layer comprises an oxide having doped ions, the doped ions have a p-orbital electron arrangement structure, and an energy level of p-orbital of the doped ions is higher than that of 2p-orbital of oxygen ions in the oxide, so that top of valence band of the active layer is higher than the energy level of oxygen vacancies formed in the oxide. The active layer of the thin film transistor is made of the oxide having the doped ions, which may improve a stability of the thin film transistor, and there is no need to add a light blocking structure in the display device.

Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括形成在衬底上的栅极，有源层，源极和漏极，有源层包括具有掺杂离子的氧化物，掺杂离子具有p轨道电子排列结构，并且能级为p 掺杂离子的轨道比氧离子中的氧离子的2p轨道高，因此活性层的价带顶部高于在氧化物中形成的氧空位的能级。 薄膜晶体管的有源层由具有掺杂离子的氧化物制成，这可以提高薄膜晶体管的稳定性，并且不需要在显示装置中添加遮光结构。

公开(公告)号：US20160013319A1

公开(公告)日：2016-01-14

申请号：US14555804

申请日：2014-11-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili WANG ,  Longbao XIN

IPC: H01L29/786 ,  H01L29/34

CPC classification number: H01L29/7869 ,  H01L29/34 ,  H01L29/66969 ,  H01L29/78618

Abstract: The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.

Abstract translation: 本发明提供一种薄膜晶体管，阵列基板和显示装置。 薄膜晶体管包括用于还原活性层中的氧空位的导电氧空位降低层。 氧空位降低层设置在有源层与源极和/或有源层和漏极之间。 通过氧空位降低层，活性层的氧空位数大幅度降低，能够提高载流子的透过率，同时降低薄膜晶体管的亚阈值摆动的值。

公开(公告)号：US20150311223A1

公开(公告)日：2015-10-29

申请号：US14406326

申请日：2014-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU ,  Meili WANG ,  Li ZHANG ,  Liangchen YAN

IPC: H01L27/12 ,  H01L21/283 ,  H01L21/308 ,  H01L29/417 ,  H01L29/40 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L21/28008 ,  H01L21/283 ,  H01L21/3081 ,  H01L27/1259 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A thin film transistor array substrate and a manufacturing method thereof, and a display device comprising the thin film transistor array substrate, including a gate electrode (4) within a gate electrode recess of a first insulating layer (2), so that the gate electrode (4) is surrounded by the first insulating layer (2), the patterned gate electrode (4) has no slope, and the first insulating layer (2) isolates the gate electrode (4) from the outside, which can prevent fracture of the gate insulating layer (5), and further effectively block copper diffusion in the thin film transistor array substrate. Further, the metal blocking layer completely covers an upper surface and/or a lower surface of the composite copper metal or the composite thin film layer including copper metal, which can play a good role in blocking copper diffusion; meanwhile, above all, it is not necessary to etch copper, which reduces cost and improves yield.

Abstract translation: 一种薄膜晶体管阵列基板及其制造方法，以及包括薄膜晶体管阵列基板的显示装置，其包括在第一绝缘层（2）的栅电极凹部内的栅电极（4），使得栅电极 （4）被第一绝缘层（2）包围，图案化栅电极（4）没有斜坡，第一绝缘层（2）将栅电极（4）与外部隔离，这可以防止 栅极绝缘层（5），并进一步有效地阻挡薄膜晶体管阵列基板中的铜扩散。 此外，金属阻挡层完全覆盖复合铜金属或包含铜金属的复合薄膜层的上表面和/或下表面，其可以在阻止铜扩散方面发挥良好的作用; 同时，最重要的是，不需要蚀刻铜，从而降低成本并提高产量。