公开(公告)号：US08587078B2

公开(公告)日：2013-11-19

申请号：US12754610

申请日：2010-04-06

申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： H01L27/0617 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

摘要： A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

摘要翻译： 提供了集成电路的制造方法。 在集成电路的互连结构的制造过程中，在互连结构的两个相邻电介质层之间形成微机电系统（MENS）隔膜。 形成MENS隔膜的方法包括以下步骤。 首先，在任何电介质层内形成多个第一开口以暴露互连结构的相应的导电材料。 其次，在电介质层上形成底部绝缘层并填充到第一开口中。 第三，去除位于第一开口中的底部绝缘层的部分，以形成用于暴露相应导电材料的至少第一沟槽。 然后，第一电极层和顶部绝缘层依次形成在底部绝缘层上，第一电极层被填充到第一沟槽中并与导电材料电连接。

公开(公告)号：US20110241137A1

公开(公告)日：2011-10-06

申请号：US12754610

申请日：2010-04-06

申请人： Chien-Hsin HUANG ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

发明人： Chien-Hsin HUANG ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： H01L27/0617 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

摘要： A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

摘要翻译： 提供了集成电路的制造方法。 在集成电路的互连结构的制造过程中，在互连结构的两个相邻电介质层之间形成微机电系统（MENS）隔膜。 形成MENS隔膜的方法包括以下步骤。 首先，在任何电介质层内形成多个第一开口以暴露互连结构的相应的导电材料。 其次，在电介质层上形成底部绝缘层并填充到第一开口中。 第三，去除位于第一开口中的底部绝缘层的部分，以形成用于暴露相应导电材料的至少第一沟槽。 然后，第一电极层和顶部绝缘层依次形成在底部绝缘层上，第一电极层被填充到第一沟槽中并与导电材料电连接。

公开(公告)号：US08368153B2

公开(公告)日：2013-02-05

申请号：US12756982

申请日：2010-04-08

申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81B7/0061 ,  B81B2201/0257 ,  B81C2203/0136 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/1461 ,  H04R2201/003 ,  Y10T29/49005 ,  H01L2924/00014 ,  H01L2924/00

摘要： A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

摘要翻译： 微机电系统（MEMS）麦克风的晶片级封装包括基板，堆叠在基板上的多个电介质层，MEMS隔膜，多个支撑环和保护层。 MEMS隔膜设置在两个相邻的电介质层之间。 第一腔室位于MEMS隔膜和衬底之间。 支撑环设置在一些电介质层中并彼此堆叠。 下支撑环的内径大于上支撑环的内径。 保护层设置在最上面的支撑环上并覆盖MEMS隔膜。 第二腔室位于MEMS隔膜和保护层之间。 保护层限定许多用于暴露MEMS隔膜的第一通孔。 MEMS麦克风的晶圆级封装具有成本低的优点。

公开(公告)号：US20110248364A1

公开(公告)日：2011-10-13

申请号：US12756982

申请日：2010-04-08

申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81B7/0061 ,  B81B2201/0257 ,  B81C2203/0136 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/1461 ,  H04R2201/003 ,  Y10T29/49005 ,  H01L2924/00014 ,  H01L2924/00

摘要： A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

摘要翻译： 微机电系统（MEMS）麦克风的晶片级封装包括基板，堆叠在基板上的多个电介质层，MEMS隔膜，多个支撑环和保护层。 MEMS隔膜设置在两个相邻的电介质层之间。 第一腔室位于MEMS隔膜和衬底之间。 支撑环设置在一些电介质层中并彼此堆叠。 下支撑环的内径大于上支撑环的内径。 保护层设置在最上面的支撑环上并覆盖MEMS隔膜。 第二腔室位于MEMS隔膜和保护层之间。 保护层限定许多用于暴露MEMS隔膜的第一通孔。 MEMS麦克风的晶圆级封装具有成本低的优点。

公开(公告)号：US08865500B2

公开(公告)日：2014-10-21

申请号：US12699797

申请日：2010-02-03

申请人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

发明人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

IPC分类号： H01L21/30

CPC分类号： H01L21/30

摘要： A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

摘要翻译： 一种制造MEMS麦克风的方法包括：首先提供具有第一表面和第二表面的基底。 衬底分为逻辑区和MEMS区。 蚀刻衬底的第一表面以在MEMS区域中形成多个第一沟槽。 然后在多个第一沟槽中形成STI材料。 随后，蚀刻衬底的第二表面以在MEMS区域中形成第二沟槽，其中第二沟槽与每个第一沟槽连接。 最后，第一个沟槽中的STI材料被去除。

公开(公告)号：US20110189804A1

公开(公告)日：2011-08-04

申请号：US12699797

申请日：2010-02-03

申请人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

发明人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

IPC分类号： H01L21/30

CPC分类号： H01L21/30

摘要： A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

摘要翻译： 一种制造MEMS麦克风的方法包括：首先提供具有第一表面和第二表面的基底。 衬底分为逻辑区和MEMS区。 蚀刻衬底的第一表面以在MEMS区域中形成多个第一沟槽。 然后在多个第一沟槽中形成STI材料。 随后，蚀刻衬底的第二表面以在MEMS区域中形成第二沟槽，其中第二沟槽与每个第一沟槽连接。 最后，第一个沟槽中的STI材料被去除。

公开(公告)号：US08310065B2

公开(公告)日：2012-11-13

申请号：US12985344

申请日：2011-01-06

申请人： Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

发明人： Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

IPC分类号： H01L23/48

CPC分类号： B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/76829 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

摘要翻译： 晶片结构的制造方法包括：提供具有多个管芯区域的衬底和围绕限定在其上的管芯区域的边缘区域; 然后在所述管芯区域中的所述衬底上形成电介质层，多个MEMS器件，多个金属互连结构和多个接合焊盘; 接下来，去除设置在边缘区域的基板上的电介质层，以露出基板; 然后形成钝化层以覆盖基板和电介质层。

公开(公告)号：US20120175778A1

公开(公告)日：2012-07-12

申请号：US12985344

申请日：2011-01-06

申请人： Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

发明人： Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

IPC分类号： H01L23/482 ,  H01L23/488 ,  H01L21/768

CPC分类号： B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/76829 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

摘要翻译： 晶片结构的制造方法包括：提供具有多个管芯区域的衬底和围绕限定在其上的管芯区域的边缘区域; 然后在所述管芯区域中的所述衬底上形成电介质层，多个MEMS器件，多个金属互连结构和多个接合焊盘; 接下来，去除设置在边缘区域的基板上的电介质层，以露出基板; 然后形成钝化层以覆盖基板和电介质层。

公开(公告)号：US08525354B2

公开(公告)日：2013-09-03

申请号：US13272289

申请日：2011-10-13

申请人： Hui-Min Wu ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

发明人： Hui-Min Wu ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L23/3192 ,  B81B7/0006 ,  B81B2207/015 ,  H01L23/291 ,  H01L23/293 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

摘要： A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

摘要翻译： 接合焊盘结构包括互连结构和隔离层。 电介质层具有开口和金属垫。 隔离层设置在互连结构上并延伸到开口中直到与金属垫接触，由此隔离层覆盖开口的侧壁，并且金属垫的一部分从开口露出。

公开(公告)号：US20070178368A1

公开(公告)日：2007-08-02

申请号：US11340433

申请日：2006-01-27

申请人： Hui-Ming Wu ,  Hui-Min Wu ,  Pi-Hsia Lee

发明人： Hui-Ming Wu ,  Hui-Min Wu ,  Pi-Hsia Lee

IPC分类号： H01M2/10

CPC分类号： H01M2/1038 ,  H01M2/1044

摘要： A battery chamber of button-cell batteries for consumer electronic devices is provided herein, which mainly contains a top member and a bottom member joined together to form a number of cell rooms for the accommodation of the button-cell batteries. A number of conduction plates covers the top and bottom of the cell rooms and electrically connects the button-cell batteries into a series connection. The thickness of the top and bottom members is roughly one half of a standard button-cell battery. The top and bottom members can be easily pried open for the installation and removal of the button-cell batteries.

摘要翻译： 本发明提供了一种用于消费电子设备的钮扣电池的电池室，其主要包括连接在一起的顶部构件和底部构件，以形成用于按钮式电池的容纳的多个电池室。 多个导电板覆盖电池室的顶部和底部，并将钮扣电池电连接成串联连接。 顶部和底部构件的厚度大约是标准钮扣电池的一半。 顶部和底部构件可以方便地打开以安装和拆卸钮扣电池。