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90 条记录 (耗时 0.036 秒)

    Thermally assisted magnetic writing device
    32.
    发明授权
    Thermally assisted magnetic writing device 有权
    热辅助磁写装置

    公开(公告)号：US08947916B2

    公开(公告)日：2015-02-03

    申请号：US13876390

    申请日：2011-09-29

    申请人： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    发明人： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08

    CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

    摘要： A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

    摘要翻译： 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

    Magnetic microparticle and method for manufacturing such a microparticle
    33.
    发明授权
    Magnetic microparticle and method for manufacturing such a microparticle 有权
    磁性微粒及其制造方法

    公开(公告)号：US08686818B2

    公开(公告)日：2014-04-01

    申请号：US13060662

    申请日：2010-09-17

    申请人： Bernard Dieny ,  Heélène Joisten ,  Philippe Sabon

    发明人： Bernard Dieny ,  Heélène Joisten ,  Philippe Sabon

    IPC分类号： H01F7/00 ,  H01F1/00

    CPC分类号： B81C1/0019 ,  A61B1/00156 ,  B81B2201/038 ,  B81B2201/06 ,  B81C2201/038

    摘要： A microparticle includes an oblong flexible tail able to propel the microparticle in a solution along a trajectory using beats transverse to the trajectory, the tail including at least one magnetic element such that the magnetic element causes beats of the tail under the action of an external alternating magnetic field non-collinear with the trajectory and a head mechanically connected to a proximal end of the tail. The microparticle includes at least one layer of material formed from one piece and including the tail and the head, the dimensions and/or shape of the head being selected such that the beats of the proximal end of the tail are limited with respect to the beats of the distal end of the tail and such that the head does not perform a complete revolution around an axis parallel to the trajectory under the effect of the external alternating magnetic field.

    摘要翻译： 微粒包括长方形柔性尾部，其能够使用横向于轨迹的搏动沿着轨迹将微粒推进到溶液中，尾部包括至少一个磁性元件，使得磁性元件在外部交替作用下引起尾巴的打击 与轨迹非共线的磁场和机械连接到尾端近端的磁头。 微粒包括至少一层材料，其由一个部件形成并包括尾部和头部，头部的尺寸和/或形状被选择为使得尾部的近端的节拍相对于节拍被限制 并且使得头部在外部交变磁场的作用下不围绕平行于轨迹的轴线执行完整的旋转。

    Radio-frequency oscillator with spin-polarised current
    35.
    发明授权
    Radio-frequency oscillator with spin-polarised current 有权
    具有自旋极化电流的射频振荡器

    公开(公告)号：US08227099B2

    公开(公告)日：2012-07-24

    申请号：US12107954

    申请日：2008-04-23

    申请人： Bernard Dieny ,  Alina-Maria Deac-Renner

    发明人： Bernard Dieny ,  Alina-Maria Deac-Renner

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  H01F10/3268 ,  H03B15/006 ,  Y10T428/1121

    摘要： This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarized electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic layer having a fixed magnetization direction, a second magnetic layer, an amagnetic layer inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device.

    摘要翻译： 该射频振荡器包括其中自旋极化电流流动的磁阻器件。 该装置包括至少一个具有固定磁化方向的第一所谓“锚定”磁性层的堆叠，第二磁性层，插在上述两层之间的磁性层，用于确保所述层的磁解耦。 该振荡器还包括使垂直于这些层的所述层中的电子流的方法，以及如果适用的话，向该结构施加外部磁场。 第二磁性层具有比在具有等于或小于电流的锥或圆柱体的程度的磁激励具有相同几何形状的相同材料的简单层中测量的阻尼比至少10％的激励阻尼因子， 流过构成磁阻器件的堆叠。

    Magnetic tunnel junction magnetic memory
    37.
    发明授权
    Magnetic tunnel junction magnetic memory 有权
    磁隧道结磁记忆体

    公开(公告)号：US07957181B2

    公开(公告)日：2011-06-07

    申请号：US12059869

    申请日：2008-03-31

    申请人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    发明人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

    摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

    摘要翻译： 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

    Magnetoresistive device
    38.
    发明授权
    Magnetoresistive device 有权
    磁阻器件

    公开(公告)号：US07944736B2

    公开(公告)日：2011-05-17

    申请号：US11989380

    申请日：2006-07-26

    申请人： Bernard Dieny ,  Virgile Javerliac

    发明人： Bernard Dieny ,  Virgile Javerliac

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.

    摘要翻译： 该装置包括以静磁相互作用相对于彼此放置的两个磁阻元件（10,20），使得通过这些元件（10,20）之间的磁通量通过所述元件的软铁磁层（26,27） 10，20）。 写装置（15）与元件（10,20）相关联，以控制每个软层（26,27）的磁化。 读导体线（11,12,13,14）与每个磁阻元件（10,20）相关联，以通过测量相应的磁阻来检测软层（26,27）的磁状态。 元件（10,20）的软铁磁层（26,27）保持基本相对于彼此反平行取向，而所述元件（10,20）的硬铁磁层（24）基本上平行取向。

    SPIN POLARISED MAGNETIC DEVICE
    39.
    发明申请
    SPIN POLARISED MAGNETIC DEVICE 有权
    旋转偏振磁装置

    公开(公告)号：US20110007560A1

    公开(公告)日：2011-01-13

    申请号：US12787746

    申请日：2010-05-26

    申请人： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

    发明人： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.

    摘要翻译： 磁性装置包括具有固定磁化方向的磁性参考层，其位于层的平面中或垂直于层的平面，具有可变磁化方向的磁存储层，分离参考层的非磁性间隔区和 存储层和具有垂直于参考层的磁化的磁性自旋偏振层，并且如果参考层的磁化被定向在参考层的平面中，并且位于参考层的平面内，则位于自旋极化层的平面之外，或者位于 如果参考层的磁化指向垂直于参考层的平面的自旋极化层的平面。 参考层和存储层之间的自旋传递系数高于自旋偏振层和存储层之间的自旋传递系数。

    Magnetic tunnel junction device and writing/reading for said device
    40.
    发明授权
    Magnetic tunnel junction device and writing/reading for said device 有权
    磁隧道连接装置和所述装置的写/读

    公开(公告)号：US07480175B2

    公开(公告)日：2009-01-20

    申请号：US11780402

    申请日：2007-07-19

    申请人： Bernard Dieny ,  Ricardo Sousa ,  Dana Stanescu

    发明人： Bernard Dieny ,  Ricardo Sousa ,  Dana Stanescu

    IPC分类号： G11C11/15

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254

    摘要： The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (I1), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.

    摘要翻译： 该装置依次包括第一电极（12），磁参考层（1），隧道势垒（3），磁存储层（4）和第二电极（13）。 至少一个第一热障被布置在存储层（4）和第二电极（13）之间，并且由具有低于5W / m /℃的热导率的材料形成。第二热障可以通过 层，布置在第一电极（12）和参考层（1）之间。 该方法的写入阶段包括通过隧道结从存储层（4）到参考层（1）的电流（I1）的流动，而读取阶段包括电流（I2）的流动 相反的方向。