摘要:
A microparticle includes an oblong flexible tail able to propel the microparticle in a solution along a trajectory using beats transverse to the trajectory, the tail including at least one magnetic element such that the magnetic element causes beats of the tail under the action of an external alternating magnetic field non-collinear with the trajectory and a head mechanically connected to a proximal end of the tail. The microparticle includes at least one layer of material formed from one piece and including the tail and the head, the dimensions and/or shape of the head being selected such that the beats of the proximal end of the tail are limited with respect to the beats of the distal end of the tail and such that the head does not perform a complete revolution around an axis parallel to the trajectory under the effect of the external alternating magnetic field.
摘要:
A method for manufacturing particles includes depositing on a substrate a layer of a first sacrificial material; depositing on the layer of the first sacrificial material a layer of a second sacrificial material that is different from the first sacrificial material; forming cavities in the layer of the second sacrificial material, the forming including pressing a structured mold against the layer of second sacrificial material; depositing a material for manufacturing the particles, the material covering the layer of the second material and at least partially filling the cavities; selectively removing the second sacrificial material from the first sacrificial material so as to obtain the particles formed by the material and arranged on the layer of the first sacrificial material; and eliminating the first sacrificial material to release the particles.
摘要:
A microparticle includes an oblong flexible tail able to propel the microparticle in a solution along a trajectory using beats transverse to the trajectory, the tail including at least one magnetic element such that the magnetic element causes beats of the tail under the action of an external alternating magnetic field non-collinear with the trajectory and a head mechanically connected to a proximal end of the tail. The microparticle includes at least one layer of material formed from one piece and including the tail and the head, the dimensions and/or shape of the head being selected such that the beats of the proximal end of the tail are limited with respect to the beats of the distal end of the tail and such that the head does not perform a complete revolution around an axis parallel to the trajectory under the effect of the external alternating magnetic field.
摘要:
Magnetic tweezers have two jaws formed by thin magnetic films connected together via a hinge. The magnetic tweezers include a nanoparticle formed by a stack of thin magnetic films. A process for fabricating the magnetic tweezers by techniques used in the fabrication of microelectronic components is presented.
摘要:
Magnetic tweezers have two jaws formed by thin magnetic films connected together via a hinge. The magnetic tweezers include a nanoparticle formed by a stack of thin magnetic films. A process for fabricating the magnetic tweezers by techniques used in the fabrication of microelectronic components is presented.
摘要:
A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.
摘要:
A magnetic element for writing by thermally assisted magnetic field or thermally assisted spin transfer comprises a stack consisting of a free magnetic layer, also called storage layer or switchable magnetization layer, of which the magnetization direction is switchable between two nonwrite stable states, both directed out-of-plane and substantially perpendicular to the plane of said layer, and of which the magnetization is spontaneously reoriented from substantially perpendicular to the plane to substantially in the plane under the effect of the rise in temperature during the writing, at least one reference magnetic layer, called pinned layer, of which the magnetization is oriented substantially perpendicular to the plane of said layer, a nonmagnetic spacer inserted between the two layers and means for making an electric current flow perpendicular to the plane of said layers.
摘要:
A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption.
摘要:
A magnetic element with thermally-assisted writing using a field or spin transfer provided, including a magnetic reference layer referred to as the “trapped layer,” the magnetization of which is in a fixed direction, and a magnetic storage layer called the “free layer” having a variable magnetization direction and consisting of a layer made of a ferromagnetic material with magnetization in the plane of the layer and magnetically coupled to a magnetization-trapping layer made of an antiferromagnetic material. A semiconductor or an insulating layer with confined-current-paths is sandwiched between the reference layer and the storage layer. At least one bilayer, consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer, is provided in the storage layer between ferromagnetic layer, which is in contact with the semiconductor or insulating layer with confined-current-paths, and antiferromagnetic layer.
摘要:
Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.