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    Electrical pumping scheme for vertical-cavity surface-emitting lasers
    32.
    发明授权
    Electrical pumping scheme for vertical-cavity surface-emitting lasers 失效
    垂直腔表面发射激光器的电泵浦方案

    公开(公告)号：US5343487A

    公开(公告)日：1994-08-30

    申请号：US955562

    申请日：1992-10-01

    申请人： Jeffery W. Scott ,  Larry A. Coldren

    发明人： Jeffery W. Scott ,  Larry A. Coldren

    IPC分类号： H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S3/19

    CPC分类号： H01S5/18333 ,  H01S2301/166 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/2059 ,  H01S5/2227

    摘要： In a vertical-cavity surface-emitting laser (VCSEL) with an active region, and first and second mirror stacks forming a resonant cavity, the VCSEL having a radial electrode configuration with a first electrode disposed around the base of the first mirror stack near one side of the active region, a second electrode on the other side of the active region with a first contacting region and a second contacting region on each side of the active region in contact with the respective electrodes, each of the contacting regions providing a current path for distributed current through the active region, the improvement wherein there is a nonlinear grading of resistivity in at least one of the contacting regions between at least one of the electrodes and the active region. Specifically, in one embodiment, the first contacting region has a first layered section abutting the first electrode which is highly conductive to radial current flow and at least a second layered section between the first layered section and the active region which is more resistive to axial current flow than to radial current flow in the first layered section. In a further embodiment, one of the two contacting regions includes a layered section which is radially graded in resistivity so as to restrict the current injection to a radius less than that of the resonant cavity, thereby improving device efficiency and preferentially supporting single mode operation.

    摘要翻译： 在具有有源区的垂直腔表面发射激光器（VCSEL）以及形成谐振腔的第一和第二反射镜叠层中，VCSEL具有径向电极结构，其中第一电极围绕第一反射镜叠层的基底设置在一个 所述有源区的另一侧的第二电极与所述有源区的与所述各电极接触的每一侧具有第一接触区和第二接触区，所述接触区中的每一个提供电流路径 对于通过有源区域的分布电流的改进，其中在至少一个电极和有源区域之间的至少一个接触区域中存在电阻率的非线性分级。 具体而言，在一个实施例中，第一接触区域具有与第一电极邻接的第一层状部分，其与径向电流流动具有高导电性，并且在第一层状部分和有源区域之间的至少第二层状部分具有更大的抵抗轴向电流 流动而不是在第一分层部分中的径向电流流动。 在另一实施例中，两个接触区域中的一个包括层状部分，其以电阻率径向分级，以将电流注入限制到小于谐振腔的半径，从而提高器件效率并优先支持单模操作。

    Surface-emitting lasers with periodic gain and a parallel driven nipi structure
    33.
    发明授权
    Surface-emitting lasers with periodic gain and a parallel driven nipi structure 失效
    具有周期性增益和平行驱动钳位结构的表面发射激光器

    公开(公告)号：US4873696A

    公开(公告)日：1989-10-10

    申请号：US265146

    申请日：1988-10-31

    申请人： Larry A. Coldren ,  Jeffery W. Scott ,  Ran H. Yan

    发明人： Larry A. Coldren ,  Jeffery W. Scott ,  Ran H. Yan

    IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/12 ,  H01S5/183 ,  H01S5/42

    CPC分类号： H01S5/18383 ,  H01S5/423 ,  H01S5/0208 ,  H01S5/0424 ,  H01S5/18341

    摘要： A surface-normal cavity, AlGaAs, Distributed-Bragg Reflector laser. The laser is constructed on a GaAs substrate. There is a nipinipi . . . gain-producing active section comprised of a plurality of gain-producing i-segments disposed at periodic intervals with respect to the wavelength of an intended operating frequency of the laser is stacked vertically with respect to the surface of the substrate. A pair of Distributed-Bragg-Reflector stacks are disposed at the respective ends of the nipinipi . . . active section. A pair of electrodes are formed on either side of and operably connected to the nipinipi . . . active section in electrical contact therewith for applying a driving current to the nipinipi . . . active section in parallel. In one embodiment, the nipinipi . . . active section has interfaces between p+ and n+ sections thereof positioned at standing wave maxima of the intended operating frequency of the laser. In another, the nipinipi . . . active section has interfaces between p+ and n+ sections thereof displaced from standing wave maxima of the intended operating frequency of the laser an amount which will allow the impedance discontinuity of the active segment to result in more in-phase reflection components whereby the gain-producing active section acts as a mirror and the net effective reflectivity of the laser is increased.

    摘要翻译： 表面正常腔，AlGaAs，分布式布拉格反射器激光器。 激光器构造在GaAs衬底上。 有一个nipinipi。 。 。 相对于基板的表面，垂直地堆叠由相对于激光器的预期工作频率的波长以周期性间隔设置的多个增益产生的i段构成的增益产生有源部分。 一对分布式布喇格反射器堆叠设置在nipinipi的各个端部。 。 。 活动部分。 一对电极形成在nipinipi的任一侧并且可操作地连接到nipinipi。 。 。 与其接触的有源部分，用于向nipinipi施加驱动电流。 。 。 活动部分并行。 在一个实施方案中，nipinipi。 。 。 激活部分具有位于激光器的预期工作频率的驻波最大值处的p +和n +部分之间的接口。 在另一个，nipinipi。 。 。 有源部分具有从激光器的预期工作频率的驻波最大值移位的p +和n +部分之间的接口，该量将允许有源段的阻抗不连续性导致更多的同相反射分量，从而增益产生活动 部分作为镜子，激光的净有效反射率增加。

    SAW Resonator filters with improved temperature stability
    34.
    发明授权
    SAW Resonator filters with improved temperature stability 失效
    SAW谐振器滤波器具有改善的温度稳定性

    公开(公告)号：US4325038A

    公开(公告)日：1982-04-13

    申请号：US191155

    申请日：1980-09-26

    申请人： Larry A. Coldren

    发明人： Larry A. Coldren

    IPC分类号： H03H9/02 ,  H03H9/64 ,  H03H9/25 ,  H03H9/145

    CPC分类号： H03H9/02771 ,  H03H9/02716 ,  H03H9/02795 ,  H03H9/6433 ,  H03H9/6446 ,  H03H9/027

    摘要： Improvement in the temperature stability of a pair of resonator filters (70 and 71) disposed on an acoustic medium (39), which resonators are coupled by a first coupler means (500), is achieved by providing a second coupler means (501) for coupling between the resonator filters. The second coupler means is chosen so that acoustic interferences between waves propagating in the first and second coupling means compensates for the temperature variation in the propagation velocities of surface waves in different directions on the acoustic medium. The phase provided between second coupler means must be in near quadrature to the phase provided by the first coupler means.In an embodiment constructed according to the present invention which utilizes parallel electromechanical (600) and folded acoustical intercavity couplers (72) to provide the necessary pair of different temperature coefficient paths, the restriction that the phases be in near quadrature provides nearly flat phase versus temperature characteristics over several tens of degrees centigrade.

    摘要翻译： 通过设置第二耦合器装置（501）来实现设置在声学介质（39）上的一对谐振器滤波器（70和71）的温度稳定性的改善，所述谐振器滤波器（70和71）通过第一耦合装置（500）耦合， 谐振滤波器之间的耦合。 选择第二耦合器装置，使得在第一和第二耦合装置中传播的波之间的声学​​干扰补偿声学介质上不同方向上的表面波的传播速度的温度变化。 在第二耦合器装置之间提供的相位必须与由第一耦合器装置提供的相位接近正交。 在根据本发明构造的实施例中，其使用并联机电（600）和折叠的声腔间耦合器（72）来提供必要的一对不同的温度系数路径，相位接近正交的限制提供了几乎平坦的相位对温度 特点几十摄氏度。

    Reactive sputter etching apparatus
    35.
    发明授权
    Reactive sputter etching apparatus 失效
    反应溅射蚀刻装置

    公开(公告)号：US4309267A

    公开(公告)日：1982-01-05

    申请号：US170586

    申请日：1980-07-21

    申请人： Gary D. Boyd ,  Larry A. Coldren ,  Frederick G. Storz

    发明人： Gary D. Boyd ,  Larry A. Coldren ,  Frederick G. Storz

    IPC分类号： H01J37/34 ,  C23C15/00

    CPC分类号： H01J37/34

    摘要： An rf sputter etch or reactive sputter etch apparatus which can be used for etching substrates at oblique angles utilizes a cathode formed from a metal grid and an equipotential enclosure. The substrate is supported in the enclosure either parallel to or at an oblique angle to the surface of the grid.

    摘要翻译： 可用于以倾斜角蚀刻衬底的射频溅射蚀刻或反应溅射蚀刻设备利用由金属栅格和等电位外壳形成的阴极。 衬底被支撑在外壳中，与栅格表面平行或倾斜。

    Reactive ion etching of III-V semiconductor compounds
    36.
    发明授权
    Reactive ion etching of III-V semiconductor compounds 失效
    III-V半导体化合物的反应离子蚀刻

    公开(公告)号：US4285763A

    公开(公告)日：1981-08-25

    申请号：US116541

    申请日：1980-01-29

    申请人： Larry A. Coldren

    发明人： Larry A. Coldren

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30621

    摘要： The successful application of the reactive ion etching technique to the III-V compounds requires the use of the appropriate etch gas. We have found that a gas mixture of chlorine (Cl.sub.2) and Oxygen (O.sub.2) will cleanly and effectively etch heated substrates of GaAs and InP and their ternary and quaternary alloys. The etch rate is increased by heating the substrate to a temperature of 100.degree. to 400.degree. C.

    摘要翻译： 将反应离子蚀刻技术成功应用于III-V族化合物需要使用合适的蚀刻气体。 我们已经发现，氯气（Cl2）和氧气（O2）的气体混合物将对GaAs和InP及其三元和四元合金的加热衬底进行清洁和有效的蚀刻。 通过将衬底加热至100-400℃的温度来提高蚀刻速率。

    Tunable laser source with integrated optical modulator
    37.
    发明授权
    Tunable laser source with integrated optical modulator 有权
    具有集成光调制器的可调谐激光源

    公开(公告)号：US07622315B2

    公开(公告)日：2009-11-24

    申请号：US12023922

    申请日：2008-01-31

    申请人： Thomas G. B. Mason ,  Larry A. Coldren ,  Gregory Fish

    发明人： Thomas G. B. Mason ,  Larry A. Coldren ,  Gregory Fish

    IPC分类号： H01L21/00

    CPC分类号： H01S5/0265 ,  H01S5/028 ,  H01S5/06256 ,  H01S5/1209 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2275

    摘要： A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

    摘要翻译： 具有集成光调制器的可调谐激光源。 可调激光源是广泛可调谐的半导体激光器，其包括在厚的低带隙波导层的顶部上的有源区域，其中波导层和有源区域都在p掺杂区域和n- 掺杂区域。 将电吸收调制器集成到半导体激光器中，其中电吸收调制器与半导体激光器共享波导层。

    SMALL DIMENSION HIGH-EFFICIENCY HIGH-SPEED VERTICAL-CAVITY SURFACE-EMITTING LASERS
    38.
    发明申请
    SMALL DIMENSION HIGH-EFFICIENCY HIGH-SPEED VERTICAL-CAVITY SURFACE-EMITTING LASERS 有权
    小尺寸高效高速垂直表面发射激光

    公开(公告)号：US20090262765A1

    公开(公告)日：2009-10-22

    申请号：US12410388

    申请日：2009-03-24

    申请人： Yu-Chia Chang ,  Larry A. Coldren

    发明人： Yu-Chia Chang ,  Larry A. Coldren

    IPC分类号： H01S3/10 ,  H01S5/183 ,  G06F17/50 ,  H01S5/00

    CPC分类号： H01S5/18333 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/18305 ,  H01S5/18311 ,  H01S2301/166

    摘要： A Vertical-Cavity Surface-Emitting Laser (VCSEL) is disclosed, comprising an optical cavity bounded by a top mirror and a bottom mirror, wherein the top mirror has multiple layers of alternating refractive index, of which the bottom three or more layers of the top mirror are deep oxidation layers having an increased oxidation length, a light emitting active region between the top mirror and the bottom mirror, and an aperture with tapered edges between the active region and the top mirror, wherein the aperture has a thickness, a taper length, an oxide aperture length, a taper angle, and an aperture opening diameter designed to reduce an optical mode's diameter without significantly increasing the optical mode's round trip scattering loss.

    摘要翻译： 公开了一种垂直腔表面发射激光器（VCSEL），其包括由顶部反射镜和底部反射镜限定的光学腔，其中顶部反射镜具有多层交替折射率，其中底层三层或更多层 上反射镜是具有增加的氧化长度的深氧化层，在上反射镜和底镜之间的发光有源区，以及在有源区和顶反射镜之间具有锥形边缘的孔，其中孔具有厚度，锥度 长度，氧化物孔径长度，锥角和孔径直径，其设计用于在不显着增加光学模式的往返散射损耗的情况下降低光学模式的直径。

    Sampled grating distributed Bragg reflector laser controller
    39.
    发明授权
    Sampled grating distributed Bragg reflector laser controller 有权
    采样光栅分布布拉格反射激光控制器

    公开(公告)号：US06954476B2

    公开(公告)日：2005-10-11

    申请号：US10476770

    申请日：2002-05-15

    申请人： Larry A. Coldren ,  Paul F. Crowder

    发明人： Larry A. Coldren ,  Paul F. Crowder

    IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S5/024 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/0687 ,  H01S5/12

    CPC分类号： B82Y20/00 ,  H01S5/0014 ,  H01S5/02415 ,  H01S5/0617 ,  H01S5/06256 ,  H01S5/0687 ,  H01S5/1209

    摘要： A controller for use with sampled grating distributed Bragg reflector (SGDBR) lasers is presented. An exemplary controller includes a table of settings representing a control surface, each setting corresponding to a separate operating point of the SGDBR laser, a first mirror current controller and a second mirror current controller. The first mirror controller and the second mirror current controller respectively control a first mirror current and a second mirror current about an estimated extremum point of the control surface to substantially maintain alignment between each of a first mirror and a second mirror, and an associated cavity mode. The first mirror current and the second mirror current can be locked at a substantially fixed distance from the extremum of the control surface.

    摘要翻译： 提出了一种用于采样光栅分布式布拉格反射器（SGDBR）激光器的控制器。 示例性控制器包括表示控制表面的设置表，每个设置对应于SGDBR激光器的单独操作点，第一反射镜电流控制器和第二反射镜电流控制器。 第一反射镜控制器和第二反射镜电流控制器分别控制关于控制表面的估计极值点的第一反射镜电流和第二反射镜电流，以基本保持第一反射镜和第二反射镜中的每一个之间的对准，以及相关联的腔模式 。 第一反射镜电流和第二反射镜电流可以被锁定在与控制表面的极值基本固定的距离处。