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    Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device
    31.
    发明授权
    Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device 失效
    具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠式非易失性存储器件，该晶体管的制造方法以及该器件的制造方法

    公开(公告)号：US07842994B2

    公开(公告)日：2010-11-30

    申请号：US12007037

    申请日：2008-01-04

    Applicant: Huaxiang Yin ,  Young-soo Park ,  Wenxu Xianyu

    Inventor： Huaxiang Yin ,  Young-soo Park ,  Wenxu Xianyu

    IPC: H01L29/788

    CPC classification number: H01L27/0688 ,  H01L21/8221 ,  H01L27/11521 ,  H01L27/11551 ,  H01L29/7854

    Abstract: A nonvolatile memory transistor having a poly-silicon fin, a stacked nonvolatile memory device having the transistor, a method of fabricating the transistor, and a method of fabricating the device are provided. The device may include an active fin protruding upward from a semiconductor substrate. At least one first charge storing pattern on a top surface and sidewalls of the active fin may be formed. At least one first control gate line on a top surface of the at least one first charge storing pattern may be formed. The at least one first control gate line may intersect over the active fin. An interlayer dielectric layer may be formed on the at least one first control gate line. A poly-silicon fin may be formed on the interlayer dielectric layer. At least one second charge storing pattern on a top surface and sidewalls of the poly-silicon fin may be formed. At least one second control gate line on a top surface of the at least one second charge storing pattern may be formed, and the at least one second control gate line may intersect over the poly-silicon fin.

    Abstract translation: 提供了具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠非易失性存储器件，该晶体管的制造方法以及该器件的制造方法。 该器件可以包括从半导体衬底向上突出的活性鳍片。 可以形成顶表面上的至少一个第一电荷存储图案和有源鳍片的侧壁。 可以形成至少一个第一电荷存储图案的顶表面上的至少一个第一控制栅极线。 至少一个第一控制栅极线可以在有源鳍上交叉。 层间绝缘层可以形成在至少一个第一控制栅极线上。 多晶硅鳍可以形成在层间介电层上。 可以形成多晶硅鳍片的顶表面和侧壁上的至少一个第二电荷存储图案。 可以形成至少一个第二电荷存储图案的顶表面上的至少一个第二控制栅极线，并且所述至少一个第二控制栅极线可以在多晶硅鳍上相交。

    Logic circuits, inverter devices and methods of operating the same
    33.
    发明申请
    Logic circuits, inverter devices and methods of operating the same 失效
    逻辑电路，逆变器及其操作方法

    公开(公告)号：US20090315590A1

    公开(公告)日：2009-12-24

    申请号：US12318727

    申请日：2009-01-07

    Applicant: Huaxiang Yin ,  Youngsoo Park ,  Jaechul Park ,  Sunil Kim

    Inventor： Huaxiang Yin ,  Youngsoo Park ,  Jaechul Park ,  Sunil Kim

    IPC: H03K19/20 ,  H03K19/0944

    CPC classification number: H03K19/01714

    Abstract: An inverter device includes at least a first transistor connected between a power source node and ground. The first transistor includes a first gate and a first terminal that are internally capacitive-coupled to control a boost voltage at a boost node. The first terminal is one of a first source and a first drain of the first transistor.

    Abstract translation: 逆变器装置至少包括连接在电源节点和地之间的第一晶体管。 第一晶体管包括内部电容耦合以控制升压节点处的升压电压的第一栅极和第一端子。 第一端子是第一晶体管的第一源极和第一漏极之一。

    Inverted nonvolatile memory device, stack module, and method of fabricating the same
    35.
    发明申请
    Inverted nonvolatile memory device, stack module, and method of fabricating the same 失效
    反相非易失性存储器件，堆叠模块及其制造方法

    公开(公告)号：US20090057745A1

    公开(公告)日：2009-03-05

    申请号：US12073398

    申请日：2008-03-05

    Applicant: Huaxiang Yin ,  Young-soo Park ,  Sun-Il Kim

    Inventor： Huaxiang Yin ,  Young-soo Park ,  Sun-Il Kim

    IPC: H01L29/788 ,  H01L29/792 ,  H01L21/335

    CPC classification number: H01L27/115 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/1203

    Abstract: Example embodiments provide a nonvolatile memory device that may be integrated through stacking, a stack module, and a method of fabricating the nonvolatile memory device. In the nonvolatile memory device according to example embodiments, at least one bottom gate electrode may be formed on a substrate. At least one charge storage layer may be formed on the at least one bottom gate electrode, and at least one semiconductor channel layer may be formed on the at least one charge storage layer.

    Abstract translation: 示例性实施例提供了可以通过堆叠集成的非易失性存储器件，堆叠模块和制造非易失性存储器件的方法。 在根据示例性实施例的非易失性存储器件中，可以在衬底上形成至少一个底栅电极。 至少一个电荷存储层可以形成在至少一个底栅电极上，并且至少一个半导体沟道层可以形成在至少一个电荷存储层上。

    Method of manufacturing single crystal Si film
    36.
    发明授权
    Method of manufacturing single crystal Si film 有权
    制造单晶Si膜的方法

    公开(公告)号：US07479442B2

    公开(公告)日：2009-01-20

    申请号：US11071175

    申请日：2005-03-04

    Applicant: Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

    Inventor： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

    IPC: H01L21/461

    CPC classification number: H01L21/76254

    Abstract: Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.

    Abstract translation: 提供制造单晶Si膜的方法。 该方法包括：制备其上形成有第一氧化物层的Si衬底和形成有第二氧化物层的绝缘衬底; 通过从所述第一氧化物层上方注入氢离子，从所述Si衬底的表面形成预定深度的分隔层; 将绝缘基板接合到Si衬底，使得第一氧化物层接触第二氧化物层; 以及通过从绝缘基板上方照射激光束切割分隔层，在绝缘基板上形成具有预定厚度的单晶硅膜。 因此，可以在绝缘基板上形成具有预定厚度的单晶Si膜。

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