公开(公告)号：US06620496B2

公开(公告)日：2003-09-16

申请号：US09998567

申请日：2001-11-16

申请人： Craig M. Carpenter ,  James J. Alwan

发明人： Craig M. Carpenter ,  James J. Alwan

IPC分类号： B32B326

CPC分类号： C23C14/5873 ,  Y10T428/24802 ,  Y10T428/249969 ,  Y10T428/249987

摘要： A method for removing a surface protrusion projecting from a layer of a first material deposited on a surface of a substrate. In accordance with one embodiment of the invention, a layer of a second material is applied on the layer of first material. A sufficient quantity of the second material is removed to expose the surface protrusion. The first material exposed through the surface protrusion is then removed.

公开(公告)号：US06620253B1

公开(公告)日：2003-09-16

申请号：US10163671

申请日：2002-06-05

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

IPC分类号： C23C1600

CPC分类号： C23C16/4401 ,  C23C16/54 ,  Y10S414/137

摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.

摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少吸入器被安装到身体的远端部分。接合器的尺寸适于通过身体与所述通道一起移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。

公开(公告)号：US06468925B2

公开(公告)日：2002-10-22

申请号：US09995387

申请日：2001-11-26

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： H01L2131

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在反应器的重新组装期间至少包括将导电的RF动力喷头支撑电极和导电气体分配喷头连接在一起，在导电RF供电的喷头支撑电极和导电气体分配喷头之间夹着导电材料; 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US06271139B1

公开(公告)日：2001-08-07

申请号：US09109003

申请日：1998-07-01

申请人： James J. Alwan ,  Craig M. Carpenter

发明人： James J. Alwan ,  Craig M. Carpenter

IPC分类号： H01L2102

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  H01J9/148 ,  H01J2329/00

摘要： A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

摘要翻译： 用抛光浆料抛光场发射显示器（FED）的栅格的方法在碱性介质中含有非常小的无定形二氧化硅胶体颗粒颗粒。 该方法导致非常适合用于自对准CMP-FED制造工艺的电网的化学机械抛光（CMP）的高选择性平面化。 还公开了根据该方法制造的FED格栅。

公开(公告)号：US07468104B2

公开(公告)日：2008-12-23

申请号：US10150388

申请日：2002-05-17

申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455

摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.

摘要翻译： 化学气相沉积装置包括至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 衬底保持器容纳在腔室内。 包括沉积室的至少一个工艺化学品入口。 腔室侧壁和腔室底壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 吹扫气体入口与至少一个过程化学品入口分开。 吹扫气体入口通道设置成与净化气体入口流体连通。 考虑了包括沉积方法实现的其他实现。

公开(公告)号：US07422986B2

公开(公告)日：2008-09-09

申请号：US11519430

申请日：2006-09-11

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

IPC分类号： H01L21/26

CPC分类号： C23C16/45536 ,  C23C16/45525 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01Q21/0087

摘要： The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

摘要翻译： 本发明包括具有反应室的沉积设备和室外的微波源。 微波源构造成将微波辐射引导到腔室。 该室包括一个窗口，通过该窗口，微波源的微波辐射可以通过该窗口进入腔室。 本发明还包括沉积方法（例如CVD或ALD方法），其中在将材料沉积在反应室内的衬底上时，利用微波辐射来激活反应室内的至少一个组分。

公开(公告)号：US07387685B2

公开(公告)日：2008-06-17

申请号：US10933604

申请日：2004-09-02

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

IPC分类号： C23C16/455 ,  C23C16/00 ,  H01L21/3065

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

摘要翻译： 用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。 在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。 反应室可以包括入口和出口。 气体分配器位于反应室中。 气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。 通道从第一表面延伸穿过分配器板到第二表面。 此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。 例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。

公开(公告)号：US07311947B2

公开(公告)日：2007-12-25

申请号：US10683806

申请日：2003-10-10

申请人： Ross S. Dando ,  Dan Gealy ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

发明人： Ross S. Dando ,  Dan Gealy ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

IPC分类号： C23C14/28

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.

摘要翻译： 在衬底上形成膜的方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以在衬底上形成材料。

公开(公告)号：US07270715B2

公开(公告)日：2007-09-18

申请号：US10695726

申请日：2003-10-28

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  Y10S156/914 ,  Y10S414/139

摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。

公开(公告)号：US07192487B2

公开(公告)日：2007-03-20

申请号：US10695727

申请日：2003-10-28

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/301

CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。