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31.发明授权Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 有权在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US07115196B2
公开(公告)日：2006-10-03
申请号：US10377397
申请日：2003-02-27
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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32.发明授权Apparatus and method for processing a microelectronic workpiece using metrology 有权使用计量处理微电子工件的装置和方法公开(公告)号：US06747734B1
公开(公告)日：2004-06-08
申请号：US09612176
申请日：2000-07-08
IPC分类号： G01N2188
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67207 , H01L21/67219 , H01L21/67253 , H01L21/67276
摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.
摘要翻译： 用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。 该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。 布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。 每个工具都可以设置一个测量单元来测量工件参数。 每个计量单元可用作每个工具的前馈控制和/或反馈控制。
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33.发明授权公开(公告)号：US06565729B2
公开(公告)日：2003-05-20
申请号：US09732513
申请日：2000-12-07
IPC分类号： C25D2112
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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34.发明申请Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 审中-公开在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US20100116671A1
公开(公告)日：2010-05-13
申请号：US11543270
申请日：2006-10-03
IPC分类号： C25D21/12
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的方法。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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公开(公告)号：US20080006617A1
公开(公告)日：2008-01-10
申请号：US11428742
申请日：2006-07-05
IPC分类号： F27B5/14
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/6719
摘要： A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.
摘要翻译： 热处理器可以包括可在处理容器或罐内的处理室周围定位的冷却套。 加热器可以进入基本上处理室容器和冷却套之间的位置。 提供具有多个工件保持位置的保持器，用于保持批次或工件或晶片。 处理室容器可移动到其基本上包围保持器的位置，使得保持器中的晶片可以在受控环境中进行处理。 可以提供冷却罩以在热处理之前或之后从加热器吸收热量。 热处理器是紧凑的和热屏蔽的，并且可以用于具有其他类型的处理器的自动处理系统中。
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36.发明授权Apparatus and method for processing a microelectronic workpiece using metrology 有权使用计量处理微电子工件的装置和方法公开(公告)号：US07161689B2
公开(公告)日：2007-01-09
申请号：US10685306
申请日：2003-10-14
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67207 , H01L21/67219 , H01L21/67253 , H01L21/67276
摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.
摘要翻译： 用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。 该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。 布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。 每个工具都可以设置一个测量单元来测量工件参数。 每个计量单元可用作每个工具的前馈控制和/或反馈控制。
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37.发明授权Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece 有权用于电化学处理微电子工件的反应器中的调谐电极公开(公告)号：US07160421B2
公开(公告)日：2007-01-09
申请号：US09866463
申请日：2001-05-24
CPC分类号： C25D5/08 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12 , Y10S204/07
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。
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38.发明授权Method and apparatus for processing a microelectronic workpiece at an elevated temperature 失效用于在升高的温度下处理微电子工件的方法和装置公开(公告)号：US06780374B2
公开(公告)日：2004-08-24
申请号：US09733608
申请日：2000-12-08
IPC分类号： C21D106
CPC分类号： H01L21/67103
摘要： An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source. A heat sink can be positioned at least proximate to the heat source to cool both the heat source and the microelectronic workpiece.
摘要翻译： 一种用于在高温下处理微电子工件的装置和方法。 在一个实施例中，该装置包括被定位成在操作期间接合和支撑微电子工件的工件支撑件。 该设备还可包括热源，其具有固体接合表面，该固体接合表面定位成与微电子工件的表面接合，热源和工件支撑件中的至少一个可在第一位置和微电子工件接触的第一位置之间相对于另一个移动 所述热源的接合表面和所述微电子工件与所述接合表面间隔开的第二位置。 热源的尺寸被设计成当微电子工件与热源接合时以足以热处理微电子工件的选定材料的速率将热量传递到微电子工件。 散热器可以至少靠近热源定位以冷却热源和微电子工件。
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39.发明授权公开(公告)号：US06428673B1
公开(公告)日：2002-08-06
申请号：US09612898
申请日：2000-07-08
IPC分类号： C25D2112
CPC分类号： C25D21/12
摘要： An electrochemical processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. An electrochemical deposition unit provides a space to receive said microelectronic workpiece to deposit a subsequent film layer onto a prior layer, wherein a condition signal from the metrology unit influences the process control of the electrochemical deposition unit. The signal can also be used to transfer the microelectronic workpiece to a layer stripping unit, or a layer enhancement unit, or to a non-compliance station. The apparatus is particularly useful in measuring seed layer thickness and adjusting the operating control of a computational fluid dynamic reactor, which electroplates a process layer onto the seed layer.
摘要翻译： 用于处理微电子工件的电化学处理装置包括测量单元和与计量单元信号连接的控制。 电化学沉积单元提供接收所述微电子工件以将后续膜层沉积到先前层上的空间，其中来自计量单元的条件信号影响电化学沉积单元的过程控制。 该信号还可用于将微电子工件传送到层剥离单元或层增强单元或不合规站。 该装置在测量种子层厚度和调节计算流体动力反应器的操作控制方面特别有用，计算流体动力反应器将处理层电镀到种子层上。
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公开(公告)号：US20130134035A1
公开(公告)日：2013-05-30
申请号：US13306666
申请日：2011-11-29
CPC分类号： C25D17/007 , C25D17/001 , C25D17/005 , C25D17/008
摘要： An electro-processing apparatus includes a rotor in a head, and a contact ring assembly on the rotor. The contact ring assembly may have one or more strips of contact fingers on a ring base, with contact fingers clamped into position on the ring base. The strips may have spaced apart projection openings, with the projections on the ring base extending into or through the projection openings. A shield ring may be attached to the ring base, to clamp the contact fingers in place, and/or to provide an electric field shield over at least part of the contact fingers. The contact fingers may be provided as a plurality of adjoining forks, with substantially each fork including at least two contact fingers.
摘要翻译： 电加工设备包括头部中的转子和转子上的接触环组件。 接触环组件可以在环形基座上具有一个或多个接触指状带，其中接触指夹紧在环形基座上的适当位置。 条带可以具有间隔开的突出开口，环形基座上的突起延伸到突出开口中或通过突出开口。 屏蔽环可以附接到环形基座，以将接触指针夹紧就位，和/或在至少部分接触指状物上提供电场屏蔽。 接触指可以设置成多个相邻的叉，基本上每个叉包括至少两个接触指。
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