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1.发明申请Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 审中-公开在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US20100116671A1
公开(公告)日：2010-05-13
申请号：US11543270
申请日：2006-10-03
IPC分类号： C25D21/12
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的方法。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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2.发明授权Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece 有权用于电化学处理微电子工件的反应器中的调谐电极公开(公告)号：US07160421B2
公开(公告)日：2007-01-09
申请号：US09866463
申请日：2001-05-24
CPC分类号： C25D5/08 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12 , Y10S204/07
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
摘要翻译： 描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。 该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。 在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。 然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。
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公开(公告)号：US07102763B2
公开(公告)日：2006-09-05
申请号：US09902491
申请日：2001-07-09
申请人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Brian Aegerter , Curt Dundas , Steven L. Peace
发明人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Brian Aegerter , Curt Dundas , Steven L. Peace
IPC分类号： G01B11/28 , H01L21/306 , B05C11/00
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67178 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/67751
摘要： A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.
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4.发明授权Method and apparatus for processing a microelectronic workpiece at an elevated temperature 失效用于在升高的温度下处理微电子工件的方法和装置公开(公告)号：US06780374B2
公开(公告)日：2004-08-24
申请号：US09733608
申请日：2000-12-08
IPC分类号： C21D106
CPC分类号： H01L21/67103
摘要： An apparatus and method for processing a microelectronic workpiece at an elevated temperature. In one embodiment, the apparatus includes a workpiece support positioned to engage and support the microelectronic workpiece during operation. The apparatus can further include a heat source having a solid engaging surface positioned to engage a surface of the microelectronic workpiece with at least one of the heat source and the workpiece support being movable relative to the other between a first position with the microelectronic workpiece contacting the engaging surface of the heat source and a second position with the microelectronic workpiece spaced apart from the engaging surface. The heat source is sized to transfer heat to the microelectronic workpiece at a rate sufficient to thermally process a selected material of the microelectronic workpiece when the microelectronic workpiece is engaged with the heat source. A heat sink can be positioned at least proximate to the heat source to cool both the heat source and the microelectronic workpiece.
摘要翻译： 一种用于在高温下处理微电子工件的装置和方法。 在一个实施例中，该装置包括被定位成在操作期间接合和支撑微电子工件的工件支撑件。 该设备还可包括热源，其具有固体接合表面，该固体接合表面定位成与微电子工件的表面接合，热源和工件支撑件中的至少一个可在第一位置和微电子工件接触的第一位置之间相对于另一个移动 所述热源的接合表面和所述微电子工件与所述接合表面间隔开的第二位置。 热源的尺寸被设计成当微电子工件与热源接合时以足以热处理微电子工件的选定材料的速率将热量传递到微电子工件。 散热器可以至少靠近热源定位以冷却热源和微电子工件。
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5.发明授权Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 有权在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US07115196B2
公开(公告)日：2006-10-03
申请号：US10377397
申请日：2003-02-27
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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6.发明授权公开(公告)号：US06565729B2
公开(公告)日：2003-05-20
申请号：US09732513
申请日：2000-12-07
IPC分类号： C25D2112
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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7.发明授权Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 失效在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US07332066B2
公开(公告)日：2008-02-19
申请号：US11053050
申请日：2005-02-07
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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8.发明授权公开(公告)号：US07189318B2
公开(公告)日：2007-03-13
申请号：US09866391
申请日：2001-05-24
CPC分类号： C25D21/12 , C25D17/001 , C25F3/30
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.
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9.发明授权公开(公告)号：US07020537B2
公开(公告)日：2006-03-28
申请号：US09849505
申请日：2001-05-04
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , C25D7/123 , C25D17/001 , C25D21/12 , G05B2219/32182 , G05B2219/32216 , G05B2219/45031 , Y02P90/22 , Y02P90/265
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
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10.发明授权Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature 有权用于处理微电子工件的方法和装置，包括用于在升高的温度下执行处理步骤的装置和方法公开(公告)号：US06471913B1
公开(公告)日：2002-10-29
申请号：US09501002
申请日：2000-02-09
IPC分类号： C21D106
CPC分类号： H01L21/67103
摘要： An apparatus for thermally processing a microelectronic workpiece is set forth. The apparatus comprises a first assembly and a second assembly, disposed opposite one another, with an actuator disposed to provide relative movement between the first assembly and second assembly. More particularly, the actuator provides relative movement between at least a loading position in which the first assembly is in a state for loading or unloading of the microelectronic workpiece, and a thermal processing position in which the first assembly and second assembly are proximate one another and form a thermal processing chamber. A thermal transfer unit is disposed in the second assembly and has a workpiece support surface that is heated and cooled in a controlled manner. As the first assembly and second assembly are driven to the thermal processing position by the actuator, an arrangement of elements bring a surface of the microelectronic workpiece into direct physical contact with the workpiece support surface of the thermal transfer unit. In a preferred embodiment, the thermal transfer unit is comprised of a low thermal mass heater and a high thermal mass cooler disposed to controllably cool the low thermal mass heater.
摘要翻译： 阐述了一种用于热处理微电子工件的装置。 该装置包括第一组件和第二组件，第一组件和第二组件彼此相对设置，致动器设置成在第一组件和第二组件之间提供相对运动。 更具体地，致动器在至少其中第一组件处于用于加载或卸载微电子工件的状态的加载位置和第一组件和第二组件彼此靠近的热处理位置之间提供相对运动，以及 形成热处理室。 热转印单元设置在第二组件中，并具有以受控方式加热和冷却的工件支撑表面。 当第一组件和第二组件被致动器驱动到热处理位置时，元件的布置使微电子工件的表面与热转印单元的工件支撑表面直接物理接触。 在优选实施例中，热传递单元包括低热量加热器和设置成可控冷却低热量加热器的高热质量冷却器。
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