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38 条记录 (耗时 0.035 秒)

    Antireflective Coating Composition and Process Thereof
    32.
    发明申请
    Antireflective Coating Composition and Process Thereof 有权
    防反射涂料组合物及其工艺

    公开(公告)号：US20110300488A1

    公开(公告)日：2011-12-08

    申请号：US12792994

    申请日：2010-06-03

    申请人： Huirong Yao ,  Jain Yin ,  Guanyang Lin ,  Mark Neisser ,  David Abdallah

    发明人： Huirong Yao ,  Jain Yin ,  Guanyang Lin ,  Mark Neisser ,  David Abdallah

    IPC分类号： G03F7/20 ,  F21V9/06

    CPC分类号： G03F7/091 ,  G02B1/04 ,  G02B1/111 ,  G03F7/0046 ,  C08L33/16 ,  C08L33/24 ,  C08L33/066 ,  C08L61/20 ,  C08L79/08

    摘要： The invention related to an antireflective coating comprising a mixture of a first polymer and a second polymer, and a thermal acid generator, where the first polymer comprises at least one fluoroalcohol moiety, at least one aliphatic hydroxyl moiety, and at least one acid moiety other than fluoroalcohol with a pKa in the range of about 8 to about 11; where the second polymer is a reaction product of an aminoplast compound with a compound comprising at least one hydroxyl and/or at least one acid group. The invention further relates to a process for using the novel composition to form an image.

    摘要翻译： 本发明涉及包含第一聚合物和第二聚合物和热酸产生剂的混合物的抗反射涂层，其中第一聚合物包含至少一个氟代醇部分，至少一个脂族羟基部分和至少一个酸部分其它 而pKa在约8至约11的范围内的氟代醇; 其中第二聚合物是氨基塑料化合物与包含至少一个羟基和/或至少一个酸基团的化合物的反应产物。 本发明还涉及使用该组合物形成图像的方法。

    Antireflective coating composition
    33.
    发明授权
    Antireflective coating composition 有权
    防反射涂料组合物

    公开(公告)号：US07932018B2

    公开(公告)日：2011-04-26

    申请号：US12115776

    申请日：2008-05-06

    申请人： Douglas McKenzie ,  David Abdallah ,  Allen G. Timko ,  M. Dalil Rahman

    发明人： Douglas McKenzie ,  David Abdallah ,  Allen G. Timko ,  M. Dalil Rahman

    IPC分类号： G03F7/09 ,  G03F7/075

    CPC分类号： G03F7/091

    摘要： The invention relates to an antireflective coating composition comprising a polymer, a crosslinker and a thermal acid generator, where the polymer comprises at least one unit of structure (1), at least one unit of structure (2) and at least one structure of structure (3), where R1 to R9 is independently selected from H and C1-C6 alkyl, R′ and R″ is independently selected from H and C1-C6 alkyl, X is C1-C6 alkylene, Y is C1-C6 alkylene. The invention further relates to a process for imaging a photoresist coated over the antireflective coating composition.

    摘要翻译： 本发明涉及包含聚合物，交联剂和热酸发生剂的抗反射涂料组合物，其中聚合物包含至少一个结构单元（1），至少一个结构单元（2）和至少一个结构结构 （3），其中R 1至R 9独立地选自H和C 1 -C 6烷基，R'和R“独立地选自H和C 1 -C 6烷基，X是C 1 -C 6亚烷基，Y是C 1 -C 6亚烷基。 本发明还涉及一种用于对涂覆在抗反射涂层组合物上的光致抗蚀剂进行成像的方法。

    Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
    35.
    发明申请
    Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step 审中-公开
    在包含图案硬化步骤的光刻胶图案之间缩小尺寸的过程

    公开(公告)号：US20090253081A1

    公开(公告)日：2009-10-08

    申请号：US12061111

    申请日：2008-04-02

    申请人： David Abdallah ,  Ralph R. Dammel ,  Victor Monreal

    发明人： David Abdallah ,  Ralph R. Dammel ,  Victor Monreal

    IPC分类号： G03F7/40

    CPC分类号： G03F7/0035 ,  G03F7/40

    摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) flood exposing the second photoresist; and, g) developing the flood exposed second photoresist to form a photoresist pattern with increased dimensions and reduced spaces.

    摘要翻译： 一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）暴露第二光致抗蚀剂; 并且g）显影暴露于第二光致抗蚀剂以形成具有增加的尺寸和减小的空间的光致抗蚀剂图案。

    Optical micrometer for measuring thickness of transparent wafers
    38.
    发明授权
    Optical micrometer for measuring thickness of transparent wafers 失效
    用于测量透明晶片厚度的光学千分尺

    公开(公告)号：US5754294A

    公开(公告)日：1998-05-19

    申请号：US643169

    申请日：1996-05-03

    申请人： Stephen H. Jones ,  Carolyn DeMain ,  Robert A. Ross ,  David Abdallah ,  Thomas Digges

    发明人： Stephen H. Jones ,  Carolyn DeMain ,  Robert A. Ross ,  David Abdallah ,  Thomas Digges

    IPC分类号： G01B11/06 ,  G01B9/02

    CPC分类号： G01B11/06

    摘要： Techniques and systems for measuring absolute thickness, the total thickness variation, and electric resistivity of a semiconductor wafer in a nondestructive optical fashion. Optical absorption is used to measure the absolute thickness of a semiconductor wafer with a light source and a phototransceiver. The thickness is determined by comparing the amount of absorption to a calibrated amount. Coherent light interference is used to measure the total thickness variation of a substrate. Alternatively, both the absolute thickness and total thickness variation of the substrate can be measured based on light absorption using a CCD imaging device. The resistivity of a wafer sample can also be measured by using an alternating electrical signal.

    摘要翻译： 以非破坏性的光学方式测量半导体晶片的绝对厚度，总厚度变化和电阻率的技术和系统。 使用光吸收来测量具有光源和光收发器的半导体晶片的绝对厚度。 通过将吸收量与校准量进行比较来确定厚度。 相干光干涉用于测量基板的总厚度变化。 或者，可以基于使用CCD成像装置的光吸收来测量基板的绝对厚度和总厚度变化。 也可以通过使用交流电信号来测量晶片样品的电阻率。