公开(公告)号：US20110151122A1

公开(公告)日：2011-06-23

申请号：US13035049

申请日：2011-02-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US07632354B2

公开(公告)日：2009-12-15

申请号：US11463180

申请日：2006-08-08

申请人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

发明人： Anthony Dip ,  Shinji Asari ,  Meenakshisundaram Gandhi

IPC分类号： C23C16/455 ,  H01L21/302

CPC分类号： H01L21/67109 ,  C23C16/45578 ,  C23C16/45591 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67115

摘要： A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

摘要翻译： 具有改善气流的热处理系统和将工艺气体注入热处理系统的方法。 热处理系统具有注射部分，其具有将处理气体注入处理空间的注射出口和将处理气体输送到注射部分的输送部分。 输送部分可以在设置在喷射部分的相对端之间的入口处与喷射部分联接。 注射部分的流体腔可以具有比输送部的流体腔更大的横截面面积。 热处理系统可以包括围绕处理空间的内管，其具有狭缝，处理空间通过狭缝与限定在热处理系统的内管和外管之间的环形泵送空间连通。

公开(公告)号：US07534731B2

公开(公告)日：2009-05-19

申请号：US11694643

申请日：2007-03-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5 ×10 12 per cc.

摘要翻译： 用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。 湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。 在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。 在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。 根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12 / cc的界面态密度。

公开(公告)号：US07358194B2

公开(公告)日：2008-04-15

申请号：US11206199

申请日：2005-08-18

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/28 ,  C23C16/4408 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3185

摘要： A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.

摘要翻译： 提供了用于在顺序沉积工艺中形成Si膜的方法。 该方法包括在处理室中提供衬底，通过将衬底暴露于氯化硅烷气体形成氯化Si膜，并干蚀刻氯化Si膜以降低Si膜的氯含量。 Si膜可以选择性地或非选择性沉积在衬底上，并且沉积可以是自限制性的或非限制性的。 其他实施例提供了在顺序沉积工艺中形成SiGe膜的方法。

公开(公告)号：US20070238302A1

公开(公告)日：2007-10-11

申请号：US11393736

申请日：2006-03-31

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/67109

摘要： A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a sequential oxide removal process. The sequential oxide removal process includes exposing the substrate at a first substrate temperature to a flow of a first etching gas containing F2 to partially remove the oxide layer from the substrate, raising the temperature of the substrate from the first substrate temperature to a second substrate temperature, and exposing the substrate at the second temperature to a flow of a second etching gas containing H2 to further remove the oxide layer from the substrate. In one embodiment, a film may be formed on the substrate following the sequential oxide removal process.

摘要翻译： 提供了从基板去除氧化物的方法。 该方法包括在基板具有形成在其上的氧化物层的处理室中提供基板，并且执行顺序的氧化物去除工艺。 顺序氧化物去除工艺包括将衬底在第一衬底温度下暴露于含有F 2 N的第一蚀刻气体的流动以从衬底部分地去除氧化物层，从而将衬底的温度从 将第一衬底温度升至第二衬底温度，并将衬底在第二温度下暴露于含有H 2 N 2的第二蚀刻气体的流动，以进一步从衬底去除氧化物层。 在一个实施例中，可以在顺序氧化物去除工艺之后在衬底上形成膜。

公开(公告)号：US20070231757A1

公开(公告)日：2007-10-04

申请号：US11277814

申请日：2006-03-29

申请人： Anthony Dip ,  Eric Malstrom

发明人： Anthony Dip ,  Eric Malstrom

IPC分类号： F23C5/00

CPC分类号： H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

摘要： A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

摘要翻译： 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US07205187B2

公开(公告)日：2007-04-17

申请号：US11035730

申请日：2005-01-18

申请人： Allen John Leith ,  Anthony Dip ,  Seungho Oh

发明人： Allen John Leith ,  Anthony Dip ,  Seungho Oh

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/32055 ,  C23C16/045 ,  C23C16/24 ,  H01L21/76877

摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。 提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。 或者，微特征可以暴露于DCS，SiCl 4和SiHCl 3气体。 或者，微特征可以暴露于（SiH 4+ + HCl）。

公开(公告)号：US07022192B2

公开(公告)日：2006-04-04

申请号：US10233483

申请日：2002-09-04

申请人： Anthony Dip ,  Takanori Saito ,  Raymond Joe

发明人： Anthony Dip ,  Takanori Saito ,  Raymond Joe

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67309 ,  Y10S206/832

摘要： A semiconductor wafer susceptor for batch substrate processing. The susceptor includes a central region in a primary plane and a plurality of flat annular extensions extending below the central region in a secondary plane. The primary and secondary planes are parallel to each other. An edge of the substrate overhangs the central region allowing no contact of the susceptor with the substrate edge.

摘要翻译： 用于批量衬底加工的半导体晶片基座。 基座包括主平面中的中心区域和在次平面内在中心区域下方延伸的多个平的环形延伸部。 主平面和次平面彼此平行。 衬底的边缘突出中心区域，允许基座与衬底边缘不接触。

公开(公告)号：US5618351A

公开(公告)日：1997-04-08

申请号：US563875

申请日：1995-11-28

申请人： Terry A. Koble, Jr. ,  Anthony Dip ,  Erik H. Engdahl ,  Ian R. Oliver ,  Christopher T. Ratliff

发明人： Terry A. Koble, Jr. ,  Anthony Dip ,  Erik H. Engdahl ,  Ian R. Oliver ,  Christopher T. Ratliff

IPC分类号： H01L21/22 ,  H01L21/00 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67303 ,  H01L21/67109 ,  H01L21/67309

摘要： Thermal treatment boat comprising a cylinder having a central axis and a plurality of band slots having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along said central axis. At least one slot in each set extends around at least 180.degree. and less than of the full circumference of said cylinder. Pairs of adjacent band slots define an annular band therebetween. The height of each slot being from about 3.8 to 12.7 mm. Each of the bands having a height, Height.sub.Band, in mm, according to the equation: ##EQU1## wherein Height.sub.Band is always .ltoreq. wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat. The cylinder can include a wafer loading effector slot therethrough in a plane of the central axis extending along the length of the cylinder. Each band preferably includes wafer support means for supporting a wafer therein. The wafer support means preferably includes at least three inwardly extending projections. The spacing between the wafer edge and the cylinder wall is within the range of from about 1.5 to 6.3 mm. In the optimum process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage from thermal stresses to the wafers.

摘要翻译： 热处理舟包括具有中心轴线的圆筒和多个带槽，所述多个带槽在垂直于所述中心轴线的平面中具有相对的上表面和下表面，并沿着所述中心轴线在预定位置间隔开。 每组中的至少一个狭槽围绕至少180°并且小于所述气缸的整个圆周的周长。 成对的相邻带隙在它们之间限定环形带。 每个槽的高度为约3.8至12.7毫米。 每个带具有高度，HeightBand，mm，根据以下等式：其中HeightBand总是

公开(公告)号：US08465592B2

公开(公告)日：2013-06-18

申请号：US13035049

申请日：2011-02-25

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。