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    Transistors including supported gate electrodes
    31.
    发明授权
    Transistors including supported gate electrodes 有权
    晶体管包括支持的栅电极

    公开(公告)号：US07960756B2

    公开(公告)日：2011-06-14

    申请号：US12468537

    申请日：2009-05-19

    申请人： Scott T. Sheppard ,  Scott Allen

    发明人： Scott T. Sheppard ,  Scott Allen

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462

    摘要： A transistor includes a protective layer having an opening extending therethrough on a substrate, and a gate electrode in the opening. First portions of the gate electrode laterally extend on surface portions of the protective layer outside the opening on opposite sides thereof, and second portions of the gate electrode are spaced apart from the protective layer and laterally extend beyond the first portions. Related devices are also discussed.

    摘要翻译： 晶体管包括在基板上具有贯穿其中的开口的保护层和开口中的栅电极。 栅电极的第一部分在保护层的相对侧上的开口的外侧的表面部分上横向延伸，并且栅电极的第二部分与保护层间隔开并横向延伸超过第一部分。 还讨论了相关设备。

    POLYMERS OF ETHYLENE OXIDE AND CARBON DIOXIDE
    33.
    发明申请
    POLYMERS OF ETHYLENE OXIDE AND CARBON DIOXIDE 审中-公开
    乙烯氧化物和二氧化碳的聚合物

    公开(公告)号：US20110087001A1

    公开(公告)日：2011-04-14

    申请号：US12990202

    申请日：2009-05-06

    申请人： Geoffrey W. Coates ,  Scott Allen ,  Tsuyoshi Ando

    发明人： Geoffrey W. Coates ,  Scott Allen ,  Tsuyoshi Ando

    IPC分类号： C08G65/26 ,  C07F15/06

    CPC分类号： C08G64/34 ,  C07F15/065 ,  C08G64/0208 ,  C08G64/183

    摘要： The present disclosure is directed, in part, to methods of synthesizing a poly(ethylene carbonate) polymer from the reaction of ethylene oxide (EO) and carbon dioxide (CO2) in the presence of a metal complex. The present disclosure also provides novel metal complexes. In one aspect, the metal complex is of formula (I), wherein R1, R2, R3, M, X and Ring A are as defined herein.

    摘要翻译： 本公开部分地涉及在金属络合物的存在下从环氧乙烷（EO）和二氧化碳（CO 2）的反应合成聚（碳酸亚乙酯）聚合物的方法。 本公开还提供新的金属络合物。 一方面，金属络合物为式（I），其中R 1，R 2，R 3，M，X和环A如本文所定义。

    Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
    35.
    发明申请
    Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides 有权
    使用无氢溅射氮化物钝化宽带隙基半导体器件

    公开(公告)号：US20070001174A1

    公开(公告)日：2007-01-04

    申请号：US11169378

    申请日：2005-06-29

    申请人： Zoltan Ring ,  Helmut Hagleitner ,  Jason Henning ,  Andrew Mackenzie ,  Scott Allen ,  Scott Sheppard ,  Richard Smith ,  Saptharishi Sriram ,  Allan Ward

    发明人： Zoltan Ring ,  Helmut Hagleitner ,  Jason Henning ,  Andrew Mackenzie ,  Scott Allen ,  Scott Sheppard ,  Richard Smith ,  Saptharishi Sriram ,  Allan Ward

    IPC分类号： H01L29/15 ,  H01L31/0256

    CPC分类号： H01L21/045 ,  H01L21/3145 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24

    摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.

    摘要翻译： 公开了钝化的半导体结构和相关方法。 该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

    ETCH PROCESS FOR IMPROVING YIELD OF DIELECTRIC CONTACTS ON NICKEL SILICIDES
    36.
    发明申请
    ETCH PROCESS FOR IMPROVING YIELD OF DIELECTRIC CONTACTS ON NICKEL SILICIDES 有权
    用于改善镍基电介质接触电阻的ETCH工艺

    公开(公告)号：US20060172535A1

    公开(公告)日：2006-08-03

    申请号：US10906112

    申请日：2005-02-03

    申请人： Scott Allen ,  Kenneth Bandy ,  Sadanand Deshpande ,  Richard Wise

    发明人： Scott Allen ,  Kenneth Bandy ,  Sadanand Deshpande ,  Richard Wise

    IPC分类号： H01L21/44 ,  H01L23/48

    CPC分类号： H01L21/76802 ,  H01L21/31116

    摘要： The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface. The contact resistance at contact surface is reduced, thereby improving the performance of the device.

    摘要翻译： 本发明的实施例通常涉及蚀刻工艺，更具体地涉及用于提高硅化镍上的电介质触点的产量的蚀刻处理。 在蚀刻过程中使用无氧原料气，以减少或消除在接触表面处的残余物，包括硅化物层的氧化和消耗。 接触表面的接触电阻降低，从而提高器件的性能。

    Inner drive for magnetic drive pump
    37.
    发明申请
    Inner drive for magnetic drive pump 审中-公开
    磁驱动泵内驱

    公开(公告)号：US20060127253A1

    公开(公告)日：2006-06-15

    申请号：US11009613

    申请日：2004-12-10

    申请人： Andrew Ekberg ,  Paul Beauregard ,  Kerry Kramlich ,  Scott Allen ,  David Carr

    发明人： Andrew Ekberg ,  Paul Beauregard ,  Kerry Kramlich ,  Scott Allen ,  David Carr

    IPC分类号： F04B17/00

    CPC分类号： H01F41/02 ,  F04D13/027 ,  H02K1/278 ,  H02K1/30 ,  H02K5/124 ,  H02K7/14 ,  H02K15/12 ,  Y10T464/30

    摘要： An inner drive for a magnetic drive pump includes a magnet supported on a yoke. The inner drive is driven about an axis to pump a corrosive process fluid. The magnet and yoke are fully encapsulated during the molding process to completely surround the magnet and yoke in a protective plastic shell. A sleeve is arranged radially outwardly of the magnet to provide further protection. Backing rings are arranged on either side of the magnet. A bonding material joins the plastic shell to the backing rings and sleeve to prevent a space from forming beneath the plastic shell that would become filled with the process fluid once it has permeated the plastic shell. A protective coating is arranged on at least a portion of the magnet to further insulate the magnet from the process fluid.

    摘要翻译： 用于磁驱动泵的内部驱动器包括支撑在轭上的磁体。 内部驱动器围绕轴线驱动以泵送腐蚀性工艺流体。 在模制过程中，磁体和磁轭被完全封装，以完全围绕保护性塑料外壳中的磁体和磁轭。 套筒径向向外设置在磁铁外面以提供进一步的保护。 支撑环布置在磁体的两侧。 接合材料将塑料壳连接到背衬环和套筒上，以防止在塑料壳体下面形成空间，塑料壳体一旦渗透到塑料壳体中就会被过程流体填充。 在该磁体的至少一部分上设有保护涂层，以使磁体与工艺流体进一步绝缘。

    Surface mount conductive adhesives
    40.
    发明授权
    Surface mount conductive adhesives 失效
    表面贴装导电胶

    公开(公告)号：US5395876A

    公开(公告)日：1995-03-07

    申请号：US47518

    申请日：1993-04-19

    申请人： Richard L. Frentzel ,  Scott Allen

    发明人： Richard L. Frentzel ,  Scott Allen

    IPC分类号： C08K3/08 ,  C09J4/00 ,  C09J4/02 ,  C09J4/06 ,  C09J175/14 ,  H01B1/22 ,  H05K1/18 ,  H05K3/32 ,  H01B1/02

    CPC分类号： H05K3/321 ,  C08K3/08 ,  C09J4/06 ,  H01B1/22 ,  H05K1/181 ,  Y10S428/901

    摘要： A surface mount conductive adhesive composition comprising:(a) about 2 to about 15 parts by weight of a binder resin selected from the group consisting of acrylated urethane resin, acrylic resin, and mixtures thereof;(b) about 2 to about 15 parts by weight of an acrylate monomer;(c) about 0.01 to about 3 parts by weight of a free radical initiator; and(d) about 72 to about 95 parts by weight of finely divided silver particles.

    摘要翻译： 一种表面贴装导电粘合剂组合物，其包含：（a）约2至约15重量份的选自丙烯酸酯化聚氨酯树脂，丙烯酸树脂及其混合物的粘合剂树脂; （b）约2至约15重量份的丙烯酸酯单体; （c）约0.01至约3重量份的自由基引发剂; 和（d）约72至约95重量份的细碎银颗粒。