公开(公告)号：US20060172535A1

公开(公告)日：2006-08-03

申请号：US10906112

申请日：2005-02-03

申请人： Scott Allen ,  Kenneth Bandy ,  Sadanand Deshpande ,  Richard Wise

发明人： Scott Allen ,  Kenneth Bandy ,  Sadanand Deshpande ,  Richard Wise

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： The embodiments of the invention generally relate to an etching process, and more particularly to an etch processing for improving the yield of dielectric contacts on nickel silicides. An oxygen-free feedgas is used in an etching process to reduce or eliminate residuals, including oxidation and consumption of the silicide layer, at the contact surface. The contact resistance at contact surface is reduced, thereby improving the performance of the device.

摘要翻译： 本发明的实施例通常涉及蚀刻工艺，更具体地涉及用于提高硅化镍上的电介质触点的产量的蚀刻处理。 在蚀刻过程中使用无氧原料气，以减少或消除在接触表面处的残余物，包括硅化物层的氧化和消耗。 接触表面的接触电阻降低，从而提高器件的性能。

公开(公告)号：US20060118785A1

公开(公告)日：2006-06-08

申请号：US11337411

申请日：2006-01-23

申请人： Scott Allen ,  Katherina Babich ,  Steven Holmes ,  Arpan Mahorowala ,  Dirk Pfeiffer ,  Richard Wise

发明人： Scott Allen ,  Katherina Babich ,  Steven Holmes ,  Arpan Mahorowala ,  Dirk Pfeiffer ,  Richard Wise

IPC分类号： H01L23/58

CPC分类号： H01L21/31144 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  Y10T428/24802 ,  Y10T428/24926

摘要： Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.

公开(公告)号：US20050056823A1

公开(公告)日：2005-03-17

申请号：US10661041

申请日：2003-09-12

申请人： Scott Allen ,  Katherina Babich ,  Steven Holmes ,  Arpan Mahorowala ,  Dirk Pfeiffer ,  Richard Wise

发明人： Scott Allen ,  Katherina Babich ,  Steven Holmes ,  Arpan Mahorowala ,  Dirk Pfeiffer ,  Richard Wise

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L29/00

CPC分类号： H01L21/31144 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  Y10T428/24802 ,  Y10T428/24926

摘要： Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.

摘要翻译： 提供了半导体处理技术。 在一个方面，一种用于图案化半导体器件中的一个或多个特征的方法包括以下步骤。 在抗反射材料的蚀刻期间，一个或多个特征的至少一个临界尺寸被减小。 还提供了光刻结构。

公开(公告)号：USD846304S1

公开(公告)日：2019-04-23

申请号：US29642543

申请日：2018-03-30

申请人： Janet Allen ,  Scott Allen

设计人： Janet Allen ,  Scott Allen

公开(公告)号：US09936801B1

公开(公告)日：2018-04-10

申请号：US15368811

申请日：2016-12-05

申请人： Scott Allen ,  Janet Allen

发明人： Scott Allen ,  Janet Allen

IPC分类号： A47B23/00 ,  A47B13/08 ,  A47B13/10 ,  A47B1/04 ,  A47B5/02 ,  A47B37/00

CPC分类号： A47B5/02 ,  A47B1/04 ,  A47B13/10 ,  A47B37/04

摘要： A transformable balcony table capable of attachment to a balcony rail includes a primary table assembly including a table top having a rear edge and a pair of side edges extending forwardly from the rear edge so as to form an apex opposite the rear edge The primary table assembly includes a mounting portion extending downwardly from the rear edge of the table top and defining a plurality of holes. A first stability member having a proximal end is removably coupled to the bottom surface and extends downwardly and rearwardly to a distal end. A fastener is selectively inserted through the slots of the mounting portion for coupling the mounting portion to the balcony rail. The balcony table includes a first and second leaf selectively coupled to respective side edges of the table top, the leaves transforming the table from two eating places to four.

公开(公告)号：US09673283B2

公开(公告)日：2017-06-06

申请号：US13588329

申请日：2012-08-17

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Kumar Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Kumar Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L21/04 ,  H01L27/06 ,  H01L25/18 ,  H01L29/66 ,  H01L29/04 ,  H02M7/00 ,  H02P7/03

CPC分类号： H01L29/7805 ,  H01L21/046 ,  H01L21/049 ,  H01L25/18 ,  H01L27/0629 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7806 ,  H01L2924/0002 ,  H01L2924/13091 ,  H02M7/003 ,  H02P7/04 ,  H01L2924/00

摘要： A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm2.

公开(公告)号：US08342281B2

公开(公告)日：2013-01-01

申请号：US12800174

申请日：2010-05-10

申请人： James H. Rooney, III ,  Jonathan T. Longley ,  Scott Allen

发明人： James H. Rooney, III ,  Jonathan T. Longley ,  Scott Allen

IPC分类号： B60B39/00

CPC分类号： B62D55/265 ,  B63B59/10

摘要： A robot drive system preferably used for a vessel hull cleaning and/or inspection robot includes a first frame portion rotatably supporting a first axle with a first wheel thereon, and a second frame portion rotatably supporting a second axle with a second wheel thereon. A joint connects the first frame portion to the second frame portion and defines an expendable and contractible portion between the first frame portion and second frame portion. An actuator subsystem is configured expand and contract the expandable and contractible portion to move the first frame portion relative to the second frame portion at the joint to angle the first axle relative to the second axle to steer the robot.

摘要翻译： 优选地用于容器船体清洁和/或检查机器人的机器人驱动系统包括：第一框架部分，其可旋转地支撑第一车轮与其上的第一车轮;以及第二车架部分，其可旋转地支撑具有第二车轮的第二车轮。 接头将第一框架部分连接到第二框架部分并且在第一框架部分和第二框架部分之间限定一个可消耗和可收缩的部分。 执行器子系统被配置为膨胀和收缩可膨胀和收缩部分，以在关节处相对于第二框架部分移动第一框架部分，以使第一轴相对于第二轴线转动以转向机器人。

公开(公告)号：USD641009S1

公开(公告)日：2011-07-05

申请号：US29361988

申请日：2010-05-18

申请人： Robert Olodort ,  Peter Cazalet ,  Scott Allen

设计人： Robert Olodort ,  Peter Cazalet ,  Scott Allen

公开(公告)号：US07858460B2

公开(公告)日：2010-12-28

申请号：US12404557

申请日：2009-03-16

申请人： Zoltan Ring ,  Helmut Hagleitner ,  Jason Patrick Henning ,  Andrew Mackenzie ,  Scott Allen ,  Scott Thomas Sheppard ,  Richard Peter Smith ,  Saptharishi Sriram ,  Allan Ward, III

发明人： Zoltan Ring ,  Helmut Hagleitner ,  Jason Patrick Henning ,  Andrew Mackenzie ,  Scott Allen ,  Scott Thomas Sheppard ,  Richard Peter Smith ,  Saptharishi Sriram ,  Allan Ward, III

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/045 ,  H01L21/3145 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24

摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.

摘要翻译： 公开了钝化的半导体结构和相关方法。 该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及化学气相沉积的化学计量氮化硅的环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

公开(公告)号：US20090224289A1

公开(公告)日：2009-09-10

申请号：US12468537

申请日：2009-05-19

申请人： Scott T. Sheppard ,  Scott Allen

发明人： Scott T. Sheppard ,  Scott Allen

IPC分类号： H01L29/778 ,  H01L29/808

CPC分类号： H01L29/7787 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462

摘要： A transistor includes a protective layer having an opening extending therethrough on a substrate, and a gate electrode in the opening. First portions of the gate electrode laterally extend on surface portions of the protective layer outside the opening on opposite sides thereof, and second portions of the gate electrode are spaced apart from the protective layer and laterally extend beyond the first portions. Related devices are also discussed.

摘要翻译： 晶体管包括在基板上具有贯穿其中的开口的保护层和开口中的栅电极。 栅电极的第一部分在保护层的相对侧上的开口的外侧的表面部分上横向延伸，并且栅电极的第二部分与保护层间隔开并横向延伸超过第一部分。 还讨论了相关设备。