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    Method of thermal processing structures formed on a substrate
    32.
    发明授权
    Method of thermal processing structures formed on a substrate 有权
    在基板上形成的热处理结构的方法

    公开(公告)号：US08518838B2

    公开(公告)日：2013-08-27

    申请号：US13401526

    申请日：2012-02-21

    申请人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

    发明人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

    IPC分类号： H01L21/00

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 公开了用于对基板的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE
    34.
    发明申请
    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 有权
    在基材上形成的热处理结构的方法

    公开(公告)号：US20070218644A1

    公开(公告)日：2007-09-20

    申请号：US11459847

    申请日：2006-07-25

    申请人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    发明人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    IPC分类号： H01L21/76

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明总体上描述了一种或多种用于在衬底的期望区域上进行退火处理的设备和各种方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE
    37.
    发明申请
    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 有权
    在基材上形成的热处理结构的方法

    公开(公告)号：US20120145684A1

    公开(公告)日：2012-06-14

    申请号：US13401526

    申请日：2012-02-21

    申请人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

    发明人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

    IPC分类号： B23K26/00 ,  B23K26/10 ,  F27D11/12

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 公开了用于对基板的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE
    38.
    发明申请
    METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 审中-公开
    在基材上形成的热处理结构的方法

    公开(公告)号：US20070212859A1

    公开(公告)日：2007-09-13

    申请号：US11459856

    申请日：2006-07-25

    申请人： Paul CAREY ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

    发明人： Paul CAREY ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

    IPC分类号： H01L21/268

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明总体上描述了一种更多的用于对基材的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    Absorber layer for DSA processing
    39.
    发明授权
    Absorber layer for DSA processing 有权
    吸收层用于DSA处理

    公开(公告)号：US07262106B2

    公开(公告)日：2007-08-28

    申请号：US10758758

    申请日：2004-01-15

    申请人： Luc Van Autryve ,  Chris D. Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash J. Mayur ,  Mark Yam ,  Wendy H. Yeh ,  Richard A. Brough

    发明人： Luc Van Autryve ,  Chris D. Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash J. Mayur ,  Mark Yam ,  Wendy H. Yeh ,  Richard A. Brough

    IPC分类号： H01L21/336 ,  H01L21/425

    CPC分类号： H01L21/3146 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324

    摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

    摘要翻译： 一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长 提供约300℃。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。 在一个方面，基板在激光退火工艺中暴露于电磁辐射。