公开(公告)号：US10577567B2

公开(公告)日：2020-03-03

申请号：US15821217

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Makonnen Payne ,  Emanuel I. Cooper ,  WonLae Kim ,  Eric Hong ,  Sean Kim

IPC: C11D7/32 ,  C11D3/33 ,  C11D7/36 ,  C11D3/00 ,  G03F7/42 ,  C11D11/00 ,  C11D1/62 ,  C11D3/06 ,  C11D3/20 ,  C11D3/28 ,  C11D3/39 ,  C11D3/43 ,  H01L21/02

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

公开(公告)号：US10290505B2

公开(公告)日：2019-05-14

申请号：US15752640

申请日：2016-08-12

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/762

Abstract: Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

公开(公告)号：US20180337253A1

公开(公告)日：2018-11-22

申请号：US15777837

申请日：2016-11-22

Applicant: ENTEGRIS, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L29/66 ,  C09K13/08 ,  H01L21/3213

CPC classification number: C09K13/08 ,  H01L21/32134 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：US09765288B2

公开(公告)日：2017-09-19

申请号：US14648815

申请日：2013-12-04

Applicant: ENTEGRIS, INC. ,  ATMI TAIWAN CO., LTD

Inventor： Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Li-Min Chen

IPC: C11D7/04 ,  C11D7/26 ,  C11D7/32 ,  C11D3/00 ,  C11D7/08 ,  C11D11/00

CPC classification number: C11D7/04 ,  C11D3/0073 ,  C11D7/08 ,  C11D7/26 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3281 ,  C11D11/0047

Abstract: Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.

公开(公告)号：US09691629B2

公开(公告)日：2017-06-27

申请号：US14880698

申请日：2015-10-12

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Eileen Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski

IPC: H01L21/311 ,  C09K13/08 ,  B65D85/00 ,  G03F7/42 ,  H01L21/02

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.