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    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric
    31.
    发明授权
    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric 有权
    用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法

    公开(公告)号：US07390703B2

    公开(公告)日：2008-06-24

    申请号：US11062766

    申请日：2005-02-22

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L51/40

    CPC分类号： H01L51/0516 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31687

    摘要： A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

    摘要翻译： 用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法包括通过图案化栅电极材料的通镀，以及使具有介电特性的有机化合物与接触孔材料接触， 栅电极材料。 接触孔材料和栅电极材料至少部分地不被覆盖。 接触孔是与栅电极材料不同的材料。 有机化合物的自组装单层形成在栅电极材料上方。 该方法还包括在不去除有机化合物的自组装单层和沉积半导体材料的情况下沉积和图案化源极和漏极接触。

    Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles
    34.
    发明授权
    Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles 有权
    通过使用腈和亚硝酸盐，减少有机场效应晶体管与钯触点的接触电阻

    公开(公告)号：US07151275B2

    公开(公告)日：2006-12-19

    申请号：US11020191

    申请日：2004-12-27

    申请人： Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

    发明人： Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

    IPC分类号： H01L21/335

    CPC分类号： H01L51/105 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545

    摘要： A semiconductor device includes a semiconductor section formed from an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The nitrile or isonitrile acts as a charge transfer molecule facilitating the transfer of charge carriers between contact and organic semiconductor material. This allows the contact resistance between contact and organic semiconductor material to be significantly reduced.

    摘要翻译： 半导体器件包括由有机半导体材料形成的半导体部分，用于将电荷载流子注入到半导体部分中的第一触点和用于从半导体部分提取电荷载流子的第二触点，其中布置腈或异腈层 在第一触点和半导体部分之间和/或第二触点和半导体部分之间。 腈或异腈作为电荷转移分子，促进接触和有机半导体材料之间的载流子的转移。 这允许显着减少接触和有机半导体材料之间的接触电阻。

    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    36.
    发明申请
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US20050260803A1

    公开(公告)日：2005-11-24

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

    IPC分类号： H01L21/283 ,  H01L21/336 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

    Octupolar molecules used as organic semiconductors
    40.
    发明授权
    Octupolar molecules used as organic semiconductors 有权
    用作有机半导体的八极分子

    公开(公告)号：US07247735B2

    公开(公告)日：2007-07-24

    申请号：US11041632

    申请日：2005-01-24

    申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid

    IPC分类号： C07D409/04 ,  C07D409/10 ,  C07D409/14 ,  C07D407/04 ,  C07D407/10 ,  H01L51/00 ,  H01L35/24 ,  C07D407/14 ,  C07D403/04 ,  C07D403/10 ,  C07D403/14 ,  C07D401/04 ,  C07D401/10 ,  C07D401/14

    CPC分类号： H01L51/0068 ,  C07D333/18 ,  C07D409/14 ,  H01L51/0067 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545

    摘要： In the case of the materials according to the invention, the charge carrier mobility in the correspondingly prepared films is achieved if the molecules are composed in such a way that side chains—consisting of conjugated aromatic or heteroaromatic systems—are attached in direct conjugation to a central aromatic or heteroaromatic ring so that the total molecule acquires an octupolar structure. This octupolar structure permits an effective π-π interaction of the molecules with one another in a manner such that stacking of a plurality of molecules along an imaginary axis (central ring) can take place and various stacks from among these stacks can interact with one another by intermeshing of the side chains. The electronic properties of the materials are determined both by the arrangement of the molecules in a layer and by the molecular design. The type of side chains and of the central ring which is electronically coupled to the side chains and ideally reinforces the effects in comparison with side chains considered in isolation is important for this purpose.

    摘要翻译： 在根据本发明的材料的情况下，如果分子以使得由共轭芳族或杂芳族体系组成的侧链与直接共轭连接的方式组成的方式实现相应制备的膜中的载流子迁移率 中心芳族或杂芳族环，使得总分子获得八极结构。 这种八极结构允许分子彼此有效的pi-pi相互作用，使得沿着假想轴（中心环）堆叠多个分子可以发生，并且这些堆中的各种叠层可以彼此相互作用 通过侧链的相互啮合。 材料的电子性质通过层中分子的排列和分子设计来确定。 电子耦合到侧链的侧链和中心环的类型和理想地加强与隔离考虑的侧链相比的效果对于此目的是重要的。