Transparent hard coats for optical elements
    31.
    发明授权
    Transparent hard coats for optical elements 有权
    用于光学元件的透明硬涂层

    公开(公告)号:US07378146B1

    公开(公告)日:2008-05-27

    申请号:US09129737

    申请日:1998-08-05

    IPC分类号: B32B7/02

    摘要: The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermittent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.

    摘要翻译: 本发明涉及可用于光学扫描仪,超市扫描仪,眼镜镜片等的光学透明元件的改进结构。氮氧化物PECVD膜的应用提供了良好的硬度和光学透明度。 显示这些物理性质的这样的薄膜作为防透光涂料在透镜和系统中是非常有用的,所述透镜和系统中的物品接触透明表面,例如在扫描仪中以及在诸如计算机等的显示器中发生间歇性环境接触的环境中, 在液晶显示器,触摸显示器和光盘中。

    Color filter for TFT displays
    33.
    发明授权
    Color filter for TFT displays 失效
    TFT显示屏滤色片

    公开(公告)号:US06242139B1

    公开(公告)日:2001-06-05

    申请号:US09122277

    申请日:1998-07-24

    IPC分类号: G02B520

    CPC分类号: G02F1/133516 G02B5/201

    摘要: A means to fabricate a color filter for use in a display, such as a liquid crystal display, in which a physical barrier is created which prevents the flow of a liquid dye after application and ensures that individual cells are filled with only the desired color. Additionally, a means is disclosed which creates a surface with all colors initially present, followed by an exposure means and a development means which enables the desired color to fill the desired cell.

    摘要翻译: 制造用于显示器(例如液晶显示器)的彩色滤光片的方法,其中产生物理屏障,防止液体染料在施加之后流动,并确保单个电池仅填充所需的颜色。 此外,公开了一种创建具有最初存在的所有颜色的表面的装置,随后是曝光装置和使所需颜色填充所需单元的显影装置。

    Microwave annealing
    35.
    发明授权
    Microwave annealing 失效
    微波退火

    公开(公告)号:US6051283A

    公开(公告)日:2000-04-18

    申请号:US5729

    申请日:1998-01-13

    摘要: The present invention is directed to a method of forming a new material layer or region near an interface region of two dissimilar materials, and an optional third layer, wherein at least one of said dissimilar materials or optional third is capable of being heated by microwave energy. The method of the present invention includes a step of irradiating a structure containing at least two dissimilar materials and an optional third layer under conditions effective to form the new material layer in the structure. An apparatus for conducting the microwave heating as well as the structures formed from the method are also described herein.

    摘要翻译: 本发明涉及一种在两种不同材料的界面区域附近形成新材料层或区域的方法,以及任选的第三层,其中所述不同材料或任选的第三层中的至少一种能够被微波能量加热 。 本发明的方法包括在有效地在结构中形成新材料层的条件下照射含有至少两种不同材料和任选的第三层的结构的步骤。 本文还描述了用于进行微波加热的装置以及由该方法形成的结构。

    Formation of ultra-shallow semiconductor junction using microwave annealing
    39.
    发明授权
    Formation of ultra-shallow semiconductor junction using microwave annealing 失效
    使用微波退火形成超浅半导体结

    公开(公告)号:US06172399B2

    公开(公告)日:2001-01-09

    申请号:US09118618

    申请日:1998-07-17

    IPC分类号: H01L2976

    摘要: The present invention is a method of utilizing microwave energy for annealing of ion implanted wafers. By controlling the time, power density and temperature regime, it is possible to substantially fully anneal the wafer while limiting (and substantially preventing) the diffusion of dopant into the silicon, thereby producing higher performance scaled semiconductor devices. It is also possible, using different conditions, to allow and control the dopant profile (diffusion) into the silicon. Another aspect of the present invention is a method of forming a PN junction in a semiconductor wafer having a profile depth less than about 50 nm and a profile wherein the net doping concentration at said PN junction changes by greater than about one order of magnitude over 6 nm wherein the surface concentration of said dopant is greater than about 1×1020/cm3. The method includes providing a semiconductor wafer which can be single crystal or amorphous surface; implanting into said surface a dopant; exposing the surface to an energy source; the energy source being applied to supply energy at a rate such that the surface is substantially fully annealed before the dopant diffuses greater than about 50 nm. Another aspect of the present invention is having a PN junction formed between a first material of a first conductivity type and a second material of a second conductivity type, the junction has a depth of less than about 50 nm, in the first material the net doping concentration at the junction changes by greater than about one order of magnitude over 10 nm, the maximum value of said first conducting material of said wafer has a surface concentration of greater than about 1×1020/cm3.

    摘要翻译: 本发明是利用微波能量退火离子注入晶片的方法。 通过控制时间,功率密度和温度状态,可以在限制(并且基本上防止)掺杂剂向硅中的扩散的同时基本上完全退火晶片,从而产生更高性能的定标的半导体器件。 也可以使用不同的条件来允许和控制硅中的掺杂剂分布(扩散)。 本发明的另一方面是在具有小于约50nm的轮廓深度的半导体晶片中形成PN结的方法和其中所述PN结处的净掺杂浓度在6以上大于约一个数量级的轮廓 nm,其中所述掺杂剂的表面浓度大于约1×1020 / cm3。 该方法包括提供可以是单晶或非晶面的半导体晶片; 将所述表面植入掺杂剂; 将表面暴露于能量源; 施加能量源以使得在掺杂剂扩散大于约50nm之前表面基本上完全退火的速率提供能量。 本发明的另一方面是在第一导电类型的第一材料和第二导电类型的第二材料之间形成PN结,该结具有小于约50nm的深度,在第一材料中,净掺杂 在该结处的浓度在10nm以上变化大约一个数量级,所述晶片的所述第一导电材料的最大值具有大于约1×1020 / cm3的表面浓度。

    Radiation control system
    40.
    发明授权
    Radiation control system 失效
    辐射控制系统

    公开(公告)号:US6150645A

    公开(公告)日:2000-11-21

    申请号:US129505

    申请日:1998-08-05

    摘要: A control system for a blind microwave radiation tool a workpiece is described. The controlled system automatically tunes the cavity containing the workpiece. The control system automatically controls the temperature of the workpiece according to a predetermined temperature versus time schedule. Control system automatically determines when the workpiece has reached a particular predetermined physical condition. To achieve these results the control system automatically monitors applied power, reflected power or current temperature and automatically controls the microwave cavity volume and shape and launch structure including antennae location, cavity short location, cavity diameter, coupling loop position, etc. in order to maintain the cavity in resonance and to determine when to exit without operator intervention. Control system can run on a small computer or an embedded controller and is useful for automatically curing polyamic acid to polyimide to a predetermined percent cure, processing preimpregnated glass cloth in a continuous manner which can be used in circuit boards and drying and partial curing of web-like materials automatically without operator intervention.

    摘要翻译: 描述了用于盲微波辐射工具的工件的控制系统。 受控系统自动调谐包含工件的腔体。 控制系统根据预定的温度对时间表自动控制工件的温度。 控制系统自动确定工件何时达到特定的预定物理状态。 为了实现这些结果,控制系统自动监测所施加的功率,反射功率或当前温度,并自动控制微波腔的体积和形状以及发射结构,包括天线位置,腔体短距离,腔体直径,耦合回路位置等,以便保持 腔内共振并确定何时退出而无需操作员干预。 控制系统可以在小型计算机或嵌入式控制器上运行,可用于将聚酰胺酸与聚酰亚胺自动固化至预定百分比固化,以连续方式处理预浸玻璃布,可用于电路板和干燥和部分固化网 自动地进行操作员干预。