Chip on wafer on substrate optoelectronic assembly and methods of assembly thereof

    公开(公告)号:US11114409B2

    公开(公告)日:2021-09-07

    申请号:US16777569

    申请日:2020-01-30

    Abstract: Examples herein relate to optoelectronic assemblies. In particular, implementations herein relate to an optoelectronic assembly formed via a chip on wafer on substrate (CoWoS) process. The optoelectronic assembly includes a substrate, an interposer, and an electronic integrated circuit (EIC). Each of the substrate, interposer, and EIC includes opposing first and second sides. The EIC is flip-chip assembled to the first side of the interposer, and the interposer with the EIC assembled thereto is flip-chip assembled to the first side of the substrate. An overmold layer extends over the first side of the interposer and encapsulates the EIC. The overmold layer includes a cavity such that a region of the first side of the interposer is exposed. An optical component is positioned within the cavity and coupled to the first side of the interposer.

    Optical receiver with three data slicers and one edge slicer

    公开(公告)号:US10673535B2

    公开(公告)日:2020-06-02

    申请号:US16085364

    申请日:2016-04-14

    Abstract: An example optical receiver may have an optical receiver front-end, four slicers, and a logic block. The optical receiver front-end may include a transimpedance amplifier to convert a photodiode output signal to a voltage signal. Three of the slicers may be data slicers, and one of the slicers may be an edge slicer. The slicers may each: shift the voltage signal based on an offset voltage set for the respective slicer, determine whether the shifted voltage signal is greater than a threshold value and generate a number of comparison signals based on the determining, and generate multiple digital signals by demuxing the comparison signals. The logic block may perform PAM-4 to binary decoding based on the data signals output by the data slicers and clock-and-data-recovery based on the digital signals output by the edge slicer.

    Light emitting diode device
    38.
    发明授权

    公开(公告)号:US10658539B2

    公开(公告)日:2020-05-19

    申请号:US14988334

    申请日:2016-01-05

    Abstract: A light emitting diode device is described which includes at least one planar non-periodic high-index-contrast grating. The light emitting diode device includes a cavity formed between a reflective optical element and a transmissive optical element. One or both of the optical elements can be a planar non-periodic high-index-contrast grating. The transmissive optical element can be a collimating lens used to collimate incident beams of light while the reflective optical element can be a parabolic reflector used to reflect incident beams of light along a direction opposite to an incidence direction. A light emitter can be disposed within the cavity and can emit beams of light.

    Bias-based Mach-Zehnder modulation (MZM) systems

    公开(公告)号:US10651942B2

    公开(公告)日:2020-05-12

    申请号:US16275727

    申请日:2019-02-14

    Abstract: One example includes a bias-based Mach-Zehnder modulation (MZM) system. The system includes a Mach-Zehnder modulator to receive and split an optical input signal and to provide an intensity-modulated optical output signal based on a high-frequency data signal to modulate a relative phase of the split optical input signal to transmit data and based on a bias voltage to modulate the relative phase of the split optical input signal to tune the Mach-Zehnder modulator. The system also includes a bias feedback controller to compare a detection voltage associated with the intensity-modulated output signal with a reference voltage to measure an extinction ratio associated with an optical power of the intensity-modulated optical output signal and to adjust the bias voltage based on the comparison to substantially maximize the extinction ratio.

Patent Agency Ranking