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    Gate metallization methods for self-aligned sidewall gate GaN HEMT
    34.
    发明授权
    Gate metallization methods for self-aligned sidewall gate GaN HEMT 有权
    用于自对准侧壁栅极GaN HEMT的栅极金属化方法

    公开(公告)号：US08698201B1

    公开(公告)日：2014-04-15

    申请号：US13968185

    申请日：2013-08-15

    Applicant: HRL Laboratories, LLC

    Inventor： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

    IPC: H01L29/205

    CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

    Abstract: A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate of a first dielectric, forming first sidewalls of a second dielectric on either side and adjacent to the gate, selectively etching into the buffer layer to form a mesa for the field effect transistor, depositing a dielectric layer over the mesa, planarizing the dielectric layer over the mesa to form a planarized surface such that a top of the gate, tops of the first sidewalls, and a top of the dielectric layer over the mesa are on the same planarized surface, depositing metal on the planzarized surface, annealing to form the gate into a metal silicided gate, and etching to remove excess non-silicided metal.

    Abstract translation: 一种用于制造场效应晶体管的栅结构的方法，该场效应晶体管在衬底上具有缓冲层，沟道层上的沟道层和势垒层包括形成第一电介质的栅极，形成第二电介质的第二侧壁， 并且与所述栅极相邻，选择性地蚀刻到所述缓冲层中以形成用于所述场效应晶体管的台面，在所述台面上沉积介电层，在所述台面上平坦化所述介电层以形成平坦化表面，使得所述栅极的顶部， 第一侧壁的顶部和台面上的电介质层的顶部在相同的平坦化表面上，在平面化表面上沉积金属，退火以将栅极形成金属硅化栅极，并蚀刻以去除多余的非硅化金属 。

    On-chip excitation and readout architecture for high-density magnetic sensing arrays based on quantum defects
    36.
    发明授权
    On-chip excitation and readout architecture for high-density magnetic sensing arrays based on quantum defects 有权

    公开(公告)号：US11150313B1

    公开(公告)日：2021-10-19

    申请号：US16399651

    申请日：2019-04-30

    Applicant: HRL LABORATORIES, LLC

    Inventor： Edward H. Chen ,  Matthew J. Pelliccione ,  David T. Chang ,  Raviv Perahia ,  Biqin Huang

    IPC: G01R33/26

    Abstract: A sensing array includes a plurality of pixels, one pixel of which includes: a sensor, the sensor including a first electrode, a second electrode, and an atomic defect site configured to be excited by light of a first frequency; a light source below the sensor and configured to emit light of the first frequency toward the defect site; and a radio frequency (RF) source below the sensor and configured to provide a first voltage to the first electrode, a second voltage to the second electrode, and an RF signal to the sensor, wherein the sensor is configured to sense a magnitude of a physical parameter by generating a photocurrent corresponding to a magnitude of a physical parameter and a differential between the first and second voltages, when excited by the light of the first frequency and affected by the RF signal.

    HF-VHF quartz MEMS resonator
    38.
    发明授权
    HF-VHF quartz MEMS resonator 有权

    公开(公告)号：US11101786B1

    公开(公告)日：2021-08-24

    申请号：US15899122

    申请日：2018-02-19

    Applicant: HRL Laboratories, LLC

    Inventor： Randall L. Kubena ,  Deborah J. Kirby ,  Hung Nguyen ,  David T. Chang

    IPC: H03H9/19 ,  H03H9/02 ,  H01L21/311 ,  B81C1/00 ,  H03H3/007

    Abstract: A MEMS resonator comprising a baseplate wafer; a piezoelectric HF-VHF resonator that comprises a monolithic piezoelectric member having at least two separate spring piezoelectric support members integrally extending therefrom, each spring piezoelectric support member having at least a rounded corner; said piezoelectric resonator being attached to the baseplate wafer by said support members; wherein said monolithic piezoelectric member comprises first and second main surfaces joined by side edges; at least one of said side edges forming an angle of between 90 and 105 degrees with one of the first and second main surfaces.

    High dynamic range gyroscope
    39.
    发明授权
    High dynamic range gyroscope 有权

    公开(公告)号：US10914585B1

    公开(公告)日：2021-02-09

    申请号：US16871497

    申请日：2020-05-11

    Applicant: HRL LABORATORIES, LLC

    Inventor： Logan D. Sorenson ,  Raviv Perahia ,  David T. Chang ,  Randall L. Kubena ,  Deborah J. Kirby ,  Hung Nguyen ,  Richard J. Joyce

    IPC: G01C19/5726 ,  G01C19/5755

    Abstract: A sensor includes an acceleration or magnetic field sensitive microelectromechanical systems (MEMS) resonator, configured to oscillate in at least a first normal mode and a second normal mode. The sensor further includes: a coarse readout circuit configured to drive the first normal mode, measure a motion of the first normal mode, and derive from the measured motion a coarse measurement of the true acceleration or true external magnetic field; and a fine readout circuit configured to drive the second normal mode, measure a motion of the second normal mode, and derive from the measured motion and the coarse measurement a measurement of the difference between the true acceleration or true external magnetic field and the coarse measurement.

    Integrated optical waveguide and electronic addressing of quantum defect centers
    40.
    发明授权
    Integrated optical waveguide and electronic addressing of quantum defect centers 有权

    公开(公告)号：US10901054B1

    公开(公告)日：2021-01-26

    申请号：US16399649

    申请日：2019-04-30

    Applicant: HRL LABORATORIES, LLC

    Inventor： Edward H. Chen ,  Matthew J. Pelliccione ,  David T. Chang ,  Raviv Perahia ,  Biqin Huang

    IPC: G01R33/345 ,  G01R33/36 ,  G01R33/26

    Abstract: An atomic defect sensor for measuring a magnitude of a physical parameter comprises an optical waveguide comprising an atomic defect site located within the optical waveguide, the optical waveguide being configured to guide an optical signal toward the atomic defect site, a first doped fin integrated with the optical waveguide at a first side of the optical waveguide, and a second doped fin integrated with the optical waveguide at a second side of the optical waveguide, wherein the atomic defect site is configured to be energetically stimulated by the optical signal in the presence of an RF signal, and to generate a photocurrent corresponding to the magnitude of the physical parameter and a voltage differential between the first and second doped fins.

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