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31.发明申请Semiconductor laser element having InGaAs compressive-strained quantum-well active layer 失效具有InGaAs压缩应变量子阱活性层的半导体激光元件公开(公告)号：US20050201440A1
公开(公告)日：2005-09-15
申请号：US11077126
申请日：2005-03-11
Applicant: Hideki Asano
Inventor： Hideki Asano
CPC classification number: H01S5/227 , B82Y20/00 , H01S5/0287 , H01S5/1039 , H01S5/2086 , H01S5/221 , H01S5/2222 , H01S5/3211 , H01S5/3403 , H01S5/34313
Abstract: In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.
Abstract translation: 在半导体激光元件中，依次形成下包层，下光波导层，InGaAs压应变量子阱有源层，上光波导层和上包覆层，条纹区域 在基板上。 在压应变量子阱有源层的两侧形成电流阻挡层，使得压电应变量子阱有源层夹在电流阻挡层的两个部分之间，并且沟槽沿着 激光谐振器通过电流阻挡层形成。 代替提供沟槽，形成在衬底上方的层的宽度被减小以形成脊状结构。
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32.发明申请Semiconductor laser element having tensile-strained quantum-well active layer 失效具有拉伸应变量子阱活性层的半导体激光元件公开(公告)号：US20050195875A1
公开(公告)日：2005-09-08
申请号：US11073521
申请日：2005-03-08
Applicant: Hideki Asano
Inventor： Hideki Asano
CPC classification number: H01S5/34326 , B82Y20/00 , H01S5/0287 , H01S5/06226 , H01S5/1039 , H01S5/2222 , H01S5/2231 , H01S5/3403
Abstract: In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch Δa/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, −0.6%≦Δa/a ≦−0.3% and 10 nm≦dw≦20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc≧400 μm and Rf×Rr≧0.5.
Abstract translation: 在半导体激光元件中，第一导电类型的AlGaInP的下包层，AlGaInP的下光波导层，InGaP的量子阱有源层，AlGaInP的上光波导层和AlGaInP的上包层 的第二导电类型的第一导电类型的GaAs衬底上依次形成。 量子阱有源层的失配度Δa/ a与衬底和厚度dw满足条件，-0.6％<=Δa/ a <= -0.3％和10nm <= dw <= 20nm。 此外，相对端面的谐振器长度Lc和反射率Rf和Rr满足条件Lc> =400μm和RfxRr≥0.5。
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33.发明授权Semiconductor laser device which includes current confinement structure and trenches formed through current stopping layer down to active layer 有权半导体激光器件，其包括电流限制结构和通过电流停止层形成的有源层形成的沟槽公开(公告)号：US06717969B2
公开(公告)日：2004-04-06
申请号：US10195762
申请日：2002-07-16
Applicant: Hideki Asano
Inventor： Hideki Asano
IPC: H01S500
CPC classification number: H01S5/2231 , H01S5/0425 , H01S5/06226 , H01S5/2059
Abstract: In a semiconductor laser device, a current confinement structure is realized by p-type and n-type layers formed above an active layer, where the p-type and n-type layers include a current stopping layer which has an opening for allowing current injection into only a predetermined stripe region of the active layer. In addition, a semiconductor layer is formed above the current confinement structure, and a pair of trenches are formed on both sides of the opening along the predetermined stripe region so as to extend from the semiconductor layer through the current stopping layer to at least the active layer. Further, an insulation film is formed on the semiconductor layer except that an area of the semiconductor layer located right above the predetermined stripe region is not covered by the insulation film, and an electrode is formed on the area of the semiconductor layer.
Abstract translation: 在半导体激光器件中，通过在有源层上形成的p型和n型层实现电流限制结构，其中p型和n型层包括具有用于允许电流注入的开口的电流停止层 仅进入有源层的预定条带区域。 此外，半导体层形成在电流限制结构的上方，并且沿着预定条带区域在开口的两侧形成一对沟槽，以便从半导体层延伸通过电流停止层至少为活性 层。 此外，在半导体层上形成绝缘膜，除了位于预定条带区正上方的半导体层的区域不被绝缘膜覆盖，并且在半导体层的区域上形成电极。
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公开(公告)号：US06356046B1
公开(公告)日：2002-03-12
申请号：US09689772
申请日：2000-10-13
Applicant: Takashi Koumura , Hideki Asano
Inventor： Takashi Koumura , Hideki Asano
IPC: G01R120
Abstract: An instrument panel for use in an automobile includes a speedometer, an engine rotational speed meter and other indicators. A pointer of each meter is driven by a stepping motor via a reduction gear train made of synthetic resin. Terminals of the stepping motor field coils are soldered on a circuit board. After the heat of the soldering is dissipated, the heat-sensitive gear train is assembled to the circuit board. Thus, the resin gears are protected from being damaged by the soldering heat. The soldering is performed under an automatic refolw-soldering or flow-soldering process. As long as the soldering is performed before assembling the resin gears, all the components of the stepping motor and the reduction gear train may be contained in a casing.
Abstract translation: 用于汽车的仪表板包括速度计，发动机转速计等指示器。 每个仪表的指针由步进电机通过由合成树脂制成的减速齿轮系驱动。 步进电机励磁线圈的端子焊接在电路板上。 在焊接热量消散之后，热敏齿轮系组装到电路板上。 因此，保护树脂齿轮不被焊接热损坏。 焊接在自动反焊或流焊工艺下进行。 只要在组装树脂齿轮之前进行焊接，步进电机和减速齿轮系的所有部件都可以包含在壳体中。
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35.发明授权Method of making semiconductor laser with inverted mesa shaped ridge with cervical surface 失效制造具有倒置的台面形状的具有子宫颈表面的脊状半导体激光器的方法
公开(公告)号：US5963786A
公开(公告)日：1999-10-05
申请号：US9726
申请日：1998-01-21
Applicant: Hideki Asano
Inventor： Hideki Asano
CPC classification number: H01S5/2231 , H01S5/209
Abstract: A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second conduction type clad layer and a first conduction type current stopping layer is formed on each side of the ridge. Each side of the inverted mesa-shaped ridge is curved into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.
Abstract translation: 半导体激光器依次形成在第一导电型半导体衬底上的第一导电型覆盖层，有源层和第二导电型覆盖层。 在第二导电型覆盖层的一部分上形成倒置的台面形状的脊，并且在脊的每一侧上形成第一导电型电流停止层。 倒立的台面形状的脊的每一侧在垂直于脊的纵向方向的平面中弯曲成凹面。
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Patent Agency Ranking
公开(公告)号：US4366516A
公开(公告)日：1982-12-28
申请号：US153007
申请日：1980-05-27
Applicant: Masatsugu Ogata , Hideki Asano , Tsuneo Narusawa , Toshikazu Narahara
Inventor： Masatsugu Ogata , Hideki Asano , Tsuneo Narusawa , Toshikazu Narahara
CPC classification number: G11B33/10 , C08L67/06 , G11B15/61 , G11B25/063
Abstract: Precision machinerycomponents such as a cylinder in a magnetic tape scanning apparatus, a cylinder base and/or a sub-chassis in a video tape recorder, etc. made of cured thermosetting resin composition comprising (A) a resin component comprising, particularly preferably, a terephthalic acid series unsaturated polyester resin, styrene and a saturated polyester resin, (B) an inorganic filler, and (C) short fibrous material such as carbon short fibers, have excellent dimensional accuracy and dimensional stability. When these precision machinery components are used, for example, in a video tape recorder, the same clear VTR picture as in the case of using those made of metal can be obtained.
Abstract translation: 精密机械部件，如磁带扫描装置中的气缸，磁带录像机中的气缸底座和/或底盘，等等，其由固化的热固性树脂组合物制成，其包含（A）树脂组分，其特别优选地包括 对苯二甲酸系不饱和聚酯树脂，苯乙烯和饱和聚酯树脂，（B）无机填料和（C）短纤维材料如碳短纤维，具有优异的尺寸精度和尺寸稳定性。 当使用这些精密机械部件时，例如在录像机中，可以获得与使用由金属制成的情况相同的清晰VTR图像。
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公开(公告)号：US09103954B2
公开(公告)日：2015-08-11
申请号：US14128638
申请日：2012-05-24
Applicant: Hideki Asano , Masanori Wada
Inventor： Hideki Asano , Masanori Wada
CPC classification number: G02B7/006 , C03B23/245 , C09K11/883 , F21V9/30
Abstract: The present invention can further increase the efficiency of light extraction from the light exit surface of a light-emitting device. A cell (10) for a light-emitting device includes: a first main wall (10a) and a second main wall (10b) which are disposed facing each other with a distance therebetween; and a sidewall (10c). The sidewall (10c) connects the first main wall (10a) and the second main wall (10b). The sidewall (10c) defines, together with the first and second main walls (10a, 10b), an internal space (10A) into which a luminescent substance is to be encapsulated. A portion of the sidewall (10c) located laterally of the internal space (10A) is white.
Abstract translation: 本发明可以进一步提高从发光装置的光出射面的光提取效率。 用于发光装置的电池（10）包括：第一主壁（10a）和第二主壁（10b），它们彼此面对地设置; 和侧壁（10c）。 侧壁（10c）连接第一主壁（10a）和第二主壁（10b）。 侧壁（10c）与第一和第二主壁（10a，10b）一起限定要封装发光物质的内部空间（10A）。 位于内部空间（10A）侧面的侧壁（10c）的一部分是白色的。
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公开(公告)号：US08746209B2
公开(公告)日：2014-06-10
申请号：US13111152
申请日：2011-05-19
Applicant: Hiroki Shimada , Atsushi Tanaka , Hideki Asano
Inventor： Hiroki Shimada , Atsushi Tanaka , Hideki Asano
CPC classification number: F02D11/10 , F02D9/1035 , F02D9/1065 , F02D2009/0277 , F02D2009/0298
Abstract: A full close position limiting member is adapted to be engaged with a valve gear when a valve is driven in a valve closing direction and reaches a full close position of the valve. An intermediate position limiting member is adapted to be engaged with a return spring when the valve is placed on a side of a predetermined intermediate position where a full close position of the valve is located. The intermediate position limiting member receives an intermediate reaction force from the return spring through engagement with the return spring, and the full close position limiting member receives a full close side engaging force from the valve gear. The full close side engaging force and the intermediate reaction force are generally directed in a predetermined direction.
Abstract translation: 当阀在关闭方向上被驱动并达到阀的完全关闭位置时，完全关闭位置限制构件适于与阀齿轮接合。 当阀被放置在阀的完全关闭位置的预定中间位置的一侧时，中间位置限制构件适于与复位弹簧接合。 中间位置限制构件通过与复位弹簧接合而接收来自复位弹簧的中间反作用力，并且全闭合位置限制构件接收来自阀齿轮的完全近侧接合力。 整个近侧接合力和中间反作用力通常指向预定的方向。
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39.发明授权公开(公告)号：US07944567B2
公开(公告)日：2011-05-17
申请号：US11633473
申请日：2006-12-05
Applicant: Hideki Asano
Inventor： Hideki Asano
CPC classification number: H01S5/06255 , H01L27/15 , H01L33/0045 , H01L33/20 , H01S3/105 , H01S5/106 , H01S5/141 , H01S5/2272
Abstract: A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.
Abstract translation: 半导体发光元件配备有包括有源层的层状结构，以及在其上表面和下表面处的电极层。 上电极层和下电极层中的至少一个被分成至少两个在光的波导方向上分离的电极。 有源层被构造为沿着波导方向具有不同的增益波长，以从对应于至少两个电极中的每一个的每个区域发射具有不同光谱的光。 输出光的光谱分布能够通过单独地改变由至少两个分割电极中的每一个注入的电流来改变。
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40.发明申请公开(公告)号：US20100259758A1
公开(公告)日：2010-10-14
申请号：US11633473
申请日：2006-12-05
Applicant: Hideki Asano
Inventor： Hideki Asano
CPC classification number: H01S5/06255 , H01L27/15 , H01L33/0045 , H01L33/20 , H01S3/105 , H01S5/106 , H01S5/141 , H01S5/2272
Abstract: A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes.
Abstract translation: 半导体发光元件配备有包括有源层的层状结构，以及在其上表面和下表面处的电极层。 上电极层和下电极层中的至少一个被分成至少两个在光的波导方向上分离的电极。 有源层被构造为沿着波导方向具有不同的增益波长，以从对应于至少两个电极中的每一个的每个区域发射具有不同光谱的光。 输出光的光谱分布能够通过单独地改变由至少两个分割电极中的每一个注入的电流来改变。
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