ELECTROPHORETIC DISPLAY DEVICE
    34.
    发明申请
    ELECTROPHORETIC DISPLAY DEVICE 有权
    电子显示装置

    公开(公告)号:US20120087003A1

    公开(公告)日:2012-04-12

    申请号:US13252536

    申请日:2011-10-04

    IPC分类号: G02F1/167

    CPC分类号: G02F1/167 G02F2001/1676

    摘要: A pixel is formed by sealing an insulating liquid and floating particles in an area defined by a first substrate, a second substrate and partitions. The width of the partition has to be reduced in order to improve the pixel brightness by enlarging a flat electrode. In this case, the height of the partition has to be reduced for retaining the mechanical strength. If the height of the partition is reduced, an area of the partition electrode becomes small, thus failing to retain the memory effect. The planar surface of the partition is then formed into a zigzag shape so as to increase the area of the partition electrode.

    摘要翻译: 通过在由第一基板,第二基板和隔板限定的区域中密封绝缘液体和浮动颗粒来形成像素。 必须减小分隔件的宽度,以便通过放大扁平电极来提高像素的亮度。 在这种情况下,为了保持机械强度,必须减小隔板的高度。 如果隔板的高度减小,则分隔电极的面积变小,因此不能保持记忆效果。 然后将隔板的平面形成为锯齿形,以增加分隔电极的面积。

    MANUFACTURING METHOD OF DISPLAY DEVICE
    35.
    发明申请
    MANUFACTURING METHOD OF DISPLAY DEVICE 有权
    显示装置的制造方法

    公开(公告)号:US20120082941A1

    公开(公告)日:2012-04-05

    申请号:US13251353

    申请日:2011-10-03

    IPC分类号: G03F7/20

    CPC分类号: G03F7/0392 G03F7/40

    摘要: An organic passivation film having a high transmittance and capable of setting a taper angle of a through hole within a predetermined range in a liquid crystal display device. A pixel electrode and a source electrode of a TFT are connected by way of a through hole formed in an organic passivation film. The organic passivation film having high productivity, high transmittance, and a predetermined taper angle θ of a through hole can be formed by using a chemical amplification photosensitive resin composition comprising, as a base material, an acrylic resin having a molecular weight of 4,000 to 20,000 and containing 1 to 6 wt % of a photoacid generator as the material for the organic passivation film, performing exposure and development for forming a through hole, and then performing post exposure, prebaking, and baking under appropriate conditions.

    摘要翻译: 一种具有高透射率并且能够将通孔的锥角设定在液晶显示装置内的预定范围内的有机钝化膜。 TFT的像素电极和源电极通过形成在有机钝化膜中的通孔连接。 有机钝化膜具有高生产率,高透射率和预定的锥角度; 可以通过使用化学增幅感光性树脂组合物形成化学增幅感光性树脂组合物,其包含作为基材的分子量为4,000〜20,000的丙烯酸树脂,含有1〜6重量%的光酸产生剂作为有机物质 钝化膜,进行曝光和显影以形成通孔,然后在合适的条件下进行后曝光,预烘烤和烘烤。

    Liquid crystal display device and dielectric film usable in the liquid crystal display device
    36.
    发明授权
    Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
    可用于液晶显示装置的液晶显示装置和电介质膜

    公开(公告)号:US07586554B2

    公开(公告)日:2009-09-08

    申请号:US11583882

    申请日:2006-10-20

    IPC分类号: G02F1/136

    摘要: The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

    摘要翻译: 本发明提供一种低功耗的高图像可见度的液晶显示装置,通过使用具有低介电常数,高耐热性,高透光率,高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量(Ni含量/ Si含量)的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

    Display device and fabrication method thereof
    37.
    发明授权
    Display device and fabrication method thereof 有权
    显示装置及其制造方法

    公开(公告)号:US07535024B2

    公开(公告)日:2009-05-19

    申请号:US11600164

    申请日:2006-11-16

    IPC分类号: H01L29/04

    摘要: The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.

    摘要翻译: 本发明提供了一种旨在减少制造工时的显示装置的制造方法。 在具有薄膜晶体管的显示装置的制造方法中,其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极 第一栅电极的尺寸,半导体层包括与第二栅电极重叠的沟道区,与第一栅电极重叠并形成在第二栅电极外的第一杂质区,第二杂质区, 形成在栅极电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域,第一杂质区域,第二杂质区域和第三杂质区域分别由相同的导电类型形成,杂质 第一杂质区域的浓度低于第三杂质区域的杂质浓度 第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度,将杂质共同地注入到第一和第二杂质区域中,使得杂质通过第一栅电极注入第一杂质区域 并且将杂质注入到第二杂质区域中,使得深度方向上的杂质浓度的峰值位置位于半导体层的下方,从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。

    Display device having contact holes' taper angle larger in display region than in terminal region
    38.
    发明授权
    Display device having contact holes' taper angle larger in display region than in terminal region 有权
    显示装置的显示区域的接触孔的锥角比端子区域大

    公开(公告)号:US07466389B2

    公开(公告)日:2008-12-16

    申请号:US11054315

    申请日:2005-02-10

    IPC分类号: G02F1/1345 G02F1/1333

    摘要: A display device is provided with a first contact hole formed in a display region and a second contact hole formed in a terminal region, and a first insulating layer and a second insulating layer formed in that order. The taper angle of the first insulating layer at the first contact hole is larger than the taper angle of the first insulating layer at the second contact hole, and the taper angle of the second insulating layer at the first contact hole is larger than the taper angle of the second insulating layer around the second contact hole.

    摘要翻译: 显示装置设置有形成在显示区域中的第一接触孔和形成在端子区域中的第二接触孔,以及依次形成的第一绝缘层和第二绝缘层。 第一接触孔处的第一绝缘层的锥角大于第二接触孔处的第一绝缘层的锥角,第一接触孔处的第二绝缘层的锥角大于锥角 在第二接触孔周围的第二绝缘层。

    Liquid Crystal Display
    40.
    发明申请
    Liquid Crystal Display 审中-公开
    液晶显示器

    公开(公告)号:US20070182905A1

    公开(公告)日:2007-08-09

    申请号:US11735790

    申请日:2007-04-16

    IPC分类号: G02F1/1343

    摘要: An interconnecting structure and a pixel structure suited to large-sized screens are formed. A counter line/electrode is formed on a TFT substrate, and the counter line/electrode is made of a stacked structure film in which a layer made of aluminum or an alloy essentially containing aluminum is covered with a high-melting point metal film, and a transparent conductive film which covers the stacked structure film.

    摘要翻译: 形成适合于大尺寸屏幕的互连结构和像素结构。 反向线/电极形成在TFT基板上,对向线/电极由叠层结构膜制成,其中由铝或基本上含有铝的合金构成的层被高熔点金属膜覆盖,并且 覆盖层叠结构膜的透明导电膜。