公开(公告)号：US20070092661A1

公开(公告)日：2007-04-26

申请号：US11583882

申请日：2006-10-20

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： C09K19/00

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US07969520B2

公开(公告)日：2011-06-28

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间绝缘膜增厚引起的开裂的限制膜厚设定为1.5μm以上。

公开(公告)号：US20090273751A1

公开(公告)日：2009-11-05

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/1333 ,  H01L27/12

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US07586554B2

公开(公告)日：2009-09-08

申请号：US11583882

申请日：2006-10-20

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US07630043B2

公开(公告)日：2009-12-08

申请号：US11777853

申请日：2007-07-13

申请人： Takashi Hattori ,  Daisuke Sonoda ,  Daisuke Ryuzaki ,  Kazuyoshi Torii

发明人： Takashi Hattori ,  Daisuke Sonoda ,  Daisuke Ryuzaki ,  Kazuyoshi Torii

IPC分类号： G02F1/1333

CPC分类号： G02F1/136213 ,  G02F1/134363 ,  G02F2001/133357 ,  G02F2202/38 ,  G02F2202/42

摘要： A liquid crystal display improved with the opening ratio and increased for the storage capacitance, in which a gate insulating film, a gate electrode, an interlayer insulating film, an image line and a source electrode are stacked in this order formed in the layer above an active device formed to a first substrate, the interlayer insulating film is formed with a coatable transparent insulating film having a specific dielectric constant of 4.0 or higher at least containing high dielectric fine particle or sol-gel, a first through hole is formed in the gate insulating film, a second through hole is formed to the interlayer insulating film in the inside of the first through hole, the source electrode is electrically connected with the active device by way of the second through hole, and the storage capacitance is constituted by the gate electrode, the image line, the source electrode, and the interlayer insulating film.

摘要翻译： 液晶显示器的开口率提高，并且对于其中栅极绝缘膜，栅极电极，层间绝缘膜，图像线和源极电极以此顺序堆叠形成在上面的层中的存储电容而增加 有源器件形成于第一衬底上，层间绝缘膜由至少包含高电介质微粒或溶胶 - 凝胶的比介电常数为4.0以上的可涂覆透明绝缘膜形成，在栅极中形成第一通孔 绝缘膜，在第一通孔的内部形成有层间绝缘膜的第二贯通孔，源电极通过第二通孔与有源器件电连接，保持电容由栅极构成 电极，图像线，源电极和层间绝缘膜。

公开(公告)号：US08158981B2

公开(公告)日：2012-04-17

申请号：US12442789

申请日：2007-09-19

申请人： Kouichi Abe ,  Kei Kasuya ,  Tetsushi Maruyama ,  Yousuke Aoki ,  Kyouko Kojima ,  Daisuke Ryuzaki

发明人： Kouichi Abe ,  Kei Kasuya ,  Tetsushi Maruyama ,  Yousuke Aoki ,  Kyouko Kojima ,  Daisuke Ryuzaki

IPC分类号： H01L33/00 ,  H01L29/92 ,  G03C1/00 ,  G03F7/00 ,  B32B3/10

CPC分类号： G03F7/022 ,  G03F7/0233 ,  G03F7/0757 ,  Y10T428/24802

摘要： The present invention provides a photosensitive resin composition comprising a component (a): a siloxane resin obtained by hydrolyzing and condensing a silane compound comprising a compound represented by the general formula (1) shown below, a component (b): a solvent dissolving the component (a) therein, and a component (c): a quinonediazide sulfonic acid ester. wherein R1 represents an organic group; A represents a divalent organic group; and X represents a hydrolyzable group, wherein plural X groups in one molecule may be the same or different.

摘要翻译： 本发明提供一种感光性树脂组合物，其含有成分（a）：将下述通式（1）表示的化合物的硅烷化合物水解缩合得到的硅氧烷树脂，成分（b）：溶解 组分（a）和组分（c）：醌二叠氮磺酸酯。 其中R1表示有机基团; A表示二价有机基团; X表示可水解基团，其中一个分子中的多个X基团可以相同或不同。

公开(公告)号：US06903445B2

公开(公告)日：2005-06-07

申请号：US10896885

申请日：2004-07-23

申请人： Daisuke Ryuzaki ,  Takeshi Furusawa

发明人： Daisuke Ryuzaki ,  Takeshi Furusawa

IPC分类号： H01L23/522 ,  H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L31/0328

CPC分类号： H01L21/76826 ,  C23C16/0272 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3143 ,  H01L21/3148 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76822 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684

摘要： Disclosed is a semiconductor device having a dielectric film of a stacked structure, comprising a low dielectric constant film containing silicon, oxygen and carbon a modified layer for the low dielectric constant film containing silicon, oxygen, carbon and fluorine and a dielectric protection film formed successively on a semiconductor substrate, the semiconductor device being manufactured by applying a plasma treatment using a fluorine-containing gas to the surface of an organic siloxane film to form a modified layer and then forming a dielectric protection film, which can improve the adhesivity with the dielectric protection film without increasing the dielectric constant of the organic siloxane film to prevent delamination.

摘要翻译： 公开了具有叠层结构的电介质膜的半导体器件，包括含有硅，氧和碳的低介电常数膜，用于含有硅，氧，碳和氟的低介电常数膜的改性层和相继形成的介电保护膜 在半导体衬底上，半导体器件是通过使用含氟气体的等离子体处理施加到有机硅氧烷膜的表面上以形成改性层，然后形成电介质保护膜来制造的，这可以改善与电介质的粘附性 保护膜不增加有机硅氧烷膜的介电常数，防止分层。

公开(公告)号：US08728341B2

公开(公告)日：2014-05-20

申请号：US13388169

申请日：2010-09-14

申请人： Daisuke Ryuzaki ,  Takenori Narita ,  Yousuke Hoshi ,  Tomohiro Iwano

发明人： Daisuke Ryuzaki ,  Takenori Narita ,  Yousuke Hoshi ,  Tomohiro Iwano

IPC分类号： C09K13/00 ,  H01L21/00 ,  C09K3/14 ,  C09G1/02 ,  B24B1/00 ,  H01L21/3105

CPC分类号： C09K3/1463 ,  B24B1/00 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/31053

摘要： A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1, by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.

摘要翻译： 本发明的研磨剂包括四价金属氢氧化物颗粒，阳离子化聚乙烯醇，至少一种选自氨基糖，氨基糖衍生物，含有氨基糖的多糖和衍生物的糖类 多糖和水。 抛光本发明的基板的方法包括通过相对移动硅基板2和抛光台板来研磨形成在具有氧化硅膜1的硅基板2上的氧化硅膜1（待抛光膜）的步骤 在氧化硅膜1与抛光垫之间提供本发明的抛光剂的同时，将氧化硅膜1压在研磨台板上的抛光垫上。

公开(公告)号：US08617275B2

公开(公告)日：2013-12-31

申请号：US12988898

申请日：2009-04-22

申请人： Yousuke Hoshi ,  Daisuke Ryuzaki ,  Naoyuki Koyama ,  Shigeru Nobe

发明人： Yousuke Hoshi ,  Daisuke Ryuzaki ,  Naoyuki Koyama ,  Shigeru Nobe

IPC分类号： H01L21/31053 ,  H01L21/3213

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/76224

摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

公开(公告)号：US20120322346A1

公开(公告)日：2012-12-20

申请号：US13575078

申请日：2011-01-20

申请人： Tomohiro Iwano ,  Hirotaka Akimoto ,  Takenori Narita ,  Tadahiro Kimura ,  Daisuke Ryuzaki

发明人： Tomohiro Iwano ,  Hirotaka Akimoto ,  Takenori Narita ,  Tadahiro Kimura ,  Daisuke Ryuzaki

IPC分类号： C09K3/14 ,  B24B1/00

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053

摘要： The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

摘要翻译： 本发明的浆料包括磨粒和水，其中磨粒包括四价氢氧化铈颗粒，并且在水分散体中产生具有至少50％/ cm的波长为500nm的光的透光率，其中磨料颗粒的含量 调整为1.0质量％。 本发明的研磨液包括磨粒，添加剂和水，其中磨粒包括四价氢氧化铈颗粒，并且在水分散体中产生波长为500nm的光的至少50％/ cm 3的透光率，其含量 的磨粒调整为1.0质量％。