摘要:
A manufacturing method of a vertical DMOSFET having a concave channel structure, which does not permit the introduction of defects or contaminant into the channel part and which can make the shape of the groove uniform, is disclosed. On a surface of a (100)-oriented n.sup.- -on-n.sup.+ epitaxial wafer is formed an initial groove by chemical dry etching. The grooved surface is then oxidized by LOCOS technique to form a LOCOS oxide film, whereby the concave structure is formed on the epitaxial wafer. The concave width is set to be at least twice the concave depth, and the sidewall angle is set to be approximately 50.degree. to make the sidewall plane (111) of high channel mobility plane. Following this process, p-type and n-type impurities are diffused from the main surface using the LOCOS oxide film as a double diffusion mask to form a body region and a source region.
摘要:
A photodetector has a semiconductor substrate which produces light-induced charge upon the absorption of incident light. A first electrode and a second electrode are attached to the surface of the semiconductor substrate so as to form metal-semiconductor junctions. When control voltage V.sub.B, which is variable in a positive range through a negative range, is applied to the first electrode, a photocurrent flows through the second electrode and depletion layers are formed in the surface of the semiconductor substrate. The control voltage V.sub.B applied to the first electrode increases the expanse of one of the depletion layers relative to that of the other to cause the light-induced charge to drift toward one of the depletion layers or the other. Consequently, a positive or negative current is delivered through the second electrode. Thus, the photosensitivity of the photodetector can be controlled by the control voltage V.sub.B.
摘要:
A control apparatus for a dazzle-free reflection mirror of a vehicle is disclosed. The control apparatus is provided with a rear light sensor and a circuit for driving the reflection mirror into a dazzle-free operation in accordance with the intensity of the rear light detected by the rear light sensor when a light switch is turned on. The control apparatus is further provided with a mirror adjusting device for adjusting the reflection angle of the reflection mirror and a detecting circuit for detecting the adjusting operation of the mirror adjusting device. When the detecting circuit detects the adjusting operation, the dazzle-free operation of the reflection mirror is disabled even if intensive light is incident to the reflection mirror from the rear of the vehicle.
摘要:
In a vehicle having an interior room mirror and a pair of exterior right and left side mirrors, a single photo sensor is provided for detecting an intensity of light incident from the rear of the vehicle. A driving circuit drives both the room mirror and the side mirrors into a dazzle-free condition in common when the photo diode detects the intensive rear light. Alternatively two photo sensors are provided for detecting not only the intensity of the rear light but also direction of the rear light and both the room mirror and one of the right and left side mirrors are driven into the dazzle-free condition in accordance with both the intensity and direction of the rear light.
摘要:
A reflection mirror using a liquid crystal cell is disclosed. A first thin film consisting of one of magnesium difluoride, silicon dioxide, silicon monoxide or titanium dioxide is formed on a glass substrate supporting the liquid crystal cell and a thin aluminum film is formed on the first thin film as a reflection mirror layer. Adhesiveness of the thin aluminum film to the glass substrate is strengthened by the first thin film. A second thin film is formed on the thin aluminum film to protect the same from being hurt. The reflection mirror may be used as a dazzle-free reflection mirror of an automotive vehicle.
摘要:
The invention discloses an apparatus for thermal diffusion of semiconductor devices, wherein a plurality of wafer boats each made of a refractory material and adapted to carry a predetermined number of wafers to be processed are sequentially fed into a furnace tube containing a high temperature, diffusion gas atmosphere and continuously transported at a predetermined speed through the furnace tube so that each wafer may have substantially the same thermal treatment and high productivity may be attained.
摘要:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
摘要:
An imaging unit includes a mount unit, an imaging element unit, a plurality of elastic members, a plurality of adjusting screws, and at least one restricting member. The mount unit is configured to support the interchangeable lens unit. The imaging element unit is disposed apart from the mount unit and is configured to produce image data for the subject by opto-electrical conversion. The plurality of elastic members is disposed in a compressed state between the mount unit and the imaging element unit. The plurality of adjusting screws is mounted to the mount unit and/or the imaging element unit to adjust the distance between the mount unit and the imaging element unit. The restricting member is mounted to the mount unit and/or the imaging element unit and configured to restrict the imaging element unit from moving close to the mount unit against the elastic force of the elastic members.
摘要:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
摘要:
A solid-state imaging device according to an aspect of the present invention includes: an imaging unit which includes pixel units arranged in rows and columns; a row select unit which selects at least one row of the pixel units; column signal lines respectively provided for the columns, and transmit pixel signals from the selected at least one row of the pixel units; amplifier circuits respectively provided for the columns, and each includes an input terminal connected to a corresponding column signal line and an output terminal through which the amplifier circuit outputs an amplified pixel signal; switch circuits respectively provided for the columns, and each switches ON and OFF of a corresponding amplifier circuit; and bypass circuits respectively provided for the columns, and each allows a pixel signal to bypass from the input terminal to the output terminal of a corresponding amplifier circuit when the corresponding amplifier circuit is OFF.