Magnetic recording media
    31.
    发明授权
    Magnetic recording media 失效
    磁记录媒体

    公开(公告)号:US4640863A

    公开(公告)日:1987-02-03

    申请号:US605673

    申请日:1984-04-27

    摘要: A magnetic recording medium comprising a flexible support and a magnetic layer formed on the flexible support. The flexible support is made of a resin composition which comprises thermoplastic resins and particles of titanium monoxide or dititanium trioxide. The particles are dispersed in the thermoplastic resin in an amount of 0.03 to 10 wt % of the composition and have an average size below 2.5 .mu.m.

    摘要翻译: 一种磁记录介质,包括柔性支撑件和形成在柔性支撑件上的磁性层。 柔性载体由包含热塑性树脂和一氧化钛或三氧化钛的颗粒的树脂组合物制成。 颗粒以组合物的0.03至10重量%的量分散在热塑性树脂中,并且具有小于2.5μm的平均尺寸。

    LIGHT-EMITTING DISPLAY APPARATUS
    32.
    发明申请
    LIGHT-EMITTING DISPLAY APPARATUS 审中-公开
    发光显示装置

    公开(公告)号:US20120032201A1

    公开(公告)日:2012-02-09

    申请号:US13262887

    申请日:2010-04-15

    IPC分类号: H01L27/32

    摘要: To provide a light-emitting display apparatus having a curved display face which can be manufactured with ease and high yield. The light-emitting display apparatus includes a curved and light-transmitting substrate 1 and a flat light-emitting display panel 2. The light-emitting display panel 2 is placed and fixed onto a curved face 1b of the substrate 1. A plurality of the light-emitting display panels 2 are arranged side by side on the curved face 1b. An outer peripheral portion of the light-emitting display panel 2 on the side of a display face is bonded to the curved face 1b through an adhering member 3. The adhering member 3 is a light-shielding member.

    摘要翻译: 提供一种具有弯曲显示面的发光显示装置,其可以容易且高产率地制造。 发光显示装置包括弯曲透光基板1和平面发光显示面板2.发光显示面板2被放置并固定在基板1的弯曲面1b上。多个 发光显示面板2并列配置在曲面1b上。 发光显示面板2的显示面侧的外周部通过粘接部件3与弯曲面1b接合。粘接部件3为遮光部件。

    Disk holding apparatus, and disk apparatus
    33.
    发明授权
    Disk holding apparatus, and disk apparatus 失效
    磁盘保持装置和磁盘装置

    公开(公告)号:US07231648B2

    公开(公告)日:2007-06-12

    申请号:US10433481

    申请日:2001-12-06

    IPC分类号: G11B33/04 G11B17/03 A47B81/06

    摘要: To provide a disk supporting apparatus, a disk holding apparatus and a disk apparatus whose planar dimension is minimized, and which can be manufactured simply and inexpensively.A plurality of supporting portions 44 inclines with respect to a top portion 46 as a vertex. A tray 26 is formed into a substantially triangular pyramid (three-dimensional) configuration, and a planar dimension of the tray 26 can be smaller than that of a conventional turntable. Accordingly, a plurality of disks can be mounted on the tray 26. The supporting portion 44 of the tray 26 can be placed in parallel to a door leaf without a slide mechanism that has conventionally been used for sliding a tray. Accordingly, a desired disk can be attached/detached merely by rotating and driving the tray 26, and a mechanism disposed at a stereo apparatus is made compact and manufactured inexpensively.

    摘要翻译: 为了提供平面尺寸最小化的盘支撑装置,盘保持装置和盘装置,并且可以简单且廉价地制造。 多个支撑部分44相对于作为顶点的顶部46倾斜。 托盘26形成为大致三角锥(三维)构造,并且托盘26的平面尺寸可以小于常规转盘的平面尺寸。 因此,多个盘可以安装在托盘26上。 托盘26的支撑部分44可以平行于门扇放置,而不需要通常用于滑动托盘的滑动机构。 因此,通过旋转和驱动托盘26,可以仅安装/拆卸所需的盘,并且将设置在立体声装置上的机构制造成小型化并且廉价地制造。

    Semiconductor light emitting device
    34.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US06855962B2

    公开(公告)日:2005-02-15

    申请号:US10616223

    申请日:2003-07-10

    CPC分类号: H01L33/38 H01L33/42

    摘要: A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.

    摘要翻译: 在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。 电流阻挡层部分地形成在其表面上。 在其整个表面上形成电流扩散电极。 在其上形成接合电极。 半导体层叠部分和电流扩散电极被分离成发光单元部分A,电极焊盘部分B和用于连接电极焊盘部分B和发光单元部分A之间或两个发光单元部分A之间的连接部分C 通过蚀刻去除发光单元部分A之间的半导体层叠部分,以除了连接部分C之外的间隙。接合电极形成在电极焊盘部分B上。

    Semiconductor light emitting device and method for manufacturing the same
    35.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 失效
    半导体发光器件及其制造方法

    公开(公告)号:US06730938B2

    公开(公告)日:2004-05-04

    申请号:US10134485

    申请日:2002-04-30

    IPC分类号: H01L2906

    CPC分类号: H01L33/145

    摘要: On a semiconductor substrate (1), there are laminated a light emitting layer forming portion (11) having at least an n-type layer (3) and a p-type layer (5) and a window layer (6), and a semiconductor laminating portion (12) is formed. On a surface thereof, a step free current blocking layer (10) is partially provided, so that a surface of the current blocking layer and the surface of the semiconductor laminating portion are flat. An upper electrode (8) is formed thereon in an area larger than that of the current blocking layer (10), and a lower electrode (9) is provided on a back surface of the semiconductor substrate (1). As a result, there can be provided a semiconductor light emitting device with structure such that there is no need to place an etching process in the middle of an epitaxial growth process, and the reliability of electrode can be improved without a step being produced at a portion at which the upper electrode is formed and a method thereof.

    摘要翻译: 在半导体基板(1)上层叠有至少具有n型层(3)和p型层(5)和窗口层(6)的发光层形成部分(11),并且 形成半导体层叠部(12)。 在其表面上,部分地设置有阶梯自由电流阻挡层(10),使得电流阻挡层的表面和半导体层叠部分的表面是平坦的。 在电流阻挡层(10)的面积上形成有上部电极(8),在半导体基板(1)的背面设置有下部电极(9)。 结果,可以提供一种半导体发光器件,其结构使得不需要在外延生长工艺的中间进行蚀刻工艺,并且可以提高电极的可靠性,而不会在 形成上电极的部分及其方法。

    Method of manufacturing an AlGaInP light emitting device using auto-doping
    37.
    发明授权
    Method of manufacturing an AlGaInP light emitting device using auto-doping 失效
    使用自动掺杂的AlGaInP发光器件的制造方法

    公开(公告)号:US06329216B1

    公开(公告)日:2001-12-11

    申请号:US09597568

    申请日:2000-06-20

    IPC分类号: H01L2100

    摘要: A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.

    摘要翻译: 半导体发光器件具有形成在衬底上并具有n型层和p型层以提供发光层的发光层形成部分。 在发光层形成部分的表面侧上形成窗口层。 窗口层由载流子浓度为5×10 18 -3×10 19 cm -3自动掺杂的AllyGal-yAs(0.6 <= y <= 0.8)形成。 所得到的半导体发光器件由于p型杂质掺杂而不会降低结晶度,从而提供高的发光效率和亮度,而不会遇到器件劣化或损坏。

    Double heterojunction light emitting device possessing a dopant gradient
across the N-type layer
    38.
    发明授权
    Double heterojunction light emitting device possessing a dopant gradient across the N-type layer 失效
    双异质结发光器件在N型层上具有掺杂剂梯度

    公开(公告)号:US6163037A

    公开(公告)日:2000-12-19

    申请号:US79262

    申请日:1998-05-15

    摘要: An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5.times.10.sup.17 cm.sup.-3 on a side thereof close to the active layer, and a carrier concentration of 7.times.10.sup.17 -7.times.10.sup.18 cm .sup.-3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.

    摘要翻译: 有源层被夹在n型覆层和p型覆层之间,形成发光层形成部分。 n型包层在其接近有源层的一侧上具有非掺杂或小于5×10 17 cm -3的载流子浓度,并且其远离活性物质的一侧的载流子浓度为7×10 17 -7×10 18 cm -3 层。 利用这种结构,可以最大限度地抑制有源层和n型包层之间以及活性层中的界面处的结晶度的劣化。 从而提供高亮度的半导体发光器件。

    Prepolymer composition utilizing polyol combination for production of
coatings and films
    40.
    发明授权
    Prepolymer composition utilizing polyol combination for production of coatings and films 失效
    利用多元醇组合制备涂料和薄膜的预聚物组合物

    公开(公告)号:US5049638A

    公开(公告)日:1991-09-17

    申请号:US372890

    申请日:1989-06-29

    摘要: A coating composition for forming a substantially non-porous moisture-permeable coating layer or film of a hydrophilic polyurethane resin, which comprises a polyol combination and a poloyisocyanate compound, or a prepolymer or polyurethane resin obtained by reacting them, said polyol combination comprising:(a) from about 50 to about 98% by weight of a polyoxyethylene polyol having an oxyethylene group content of from about 50 to about 90% by weight, a hydroxyl value of from about 15 to about 60 and at least 3 hydroxyl groups; and(b) from about 2 to about 50% by weight of a diol having a molecular weight of from about 62 to about 2,000 which may contain oxyethylene groups;provided that the molar equivalent ratio of the component (b) to the component (a) is from about 0.2 to about 5, and the total oxyethylene group content in the components (a) and (b) is at least about 70% by weight.