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1.发明授权Method of manufacturing an AlGaInP light emitting device using auto-doping 失效使用自动掺杂的AlGaInP发光器件的制造方法公开(公告)号：US06329216B1
公开(公告)日：2001-12-11
申请号：US09597568
申请日：2000-06-20
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
摘要翻译： 半导体发光器件具有形成在衬底上并具有n型层和p型层以提供发光层的发光层形成部分。 在发光层形成部分的表面侧上形成窗口层。 窗口层由载流子浓度为5×10 18 -3×10 19 cm -3自动掺杂的AllyGal-yAs（0.6 <= y <= 0.8）形成。 所得到的半导体发光器件由于p型杂质掺杂而不会降低结晶度，从而提供高的发光效率和亮度，而不会遇到器件劣化或损坏。
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2.发明授权Double heterojunction light emitting device possessing a dopant gradient across the N-type layer 失效双异质结发光器件在N型层上具有掺杂剂梯度
公开(公告)号：US6163037A
公开(公告)日：2000-12-19
申请号：US79262
申请日：1998-05-15
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
CPC分类号： H01L33/02 , H01L33/025 , H01L33/30
摘要： An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5.times.10.sup.17 cm.sup.-3 on a side thereof close to the active layer, and a carrier concentration of 7.times.10.sup.17 -7.times.10.sup.18 cm .sup.-3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.
摘要翻译： 有源层被夹在n型覆层和p型覆层之间，形成发光层形成部分。 n型包层在其接近有源层的一侧上具有非掺杂或小于5×10 17 cm -3的载流子浓度，并且其远离活性物质的一侧的载流子浓度为7×10 17 -7×10 18 cm -3 层。 利用这种结构，可以最大限度地抑制有源层和n型包层之间以及活性层中的界面处的结晶度的劣化。 从而提供高亮度的半导体发光器件。
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公开(公告)号：US06426518B1
公开(公告)日：2002-07-30
申请号：US09477830
申请日：2000-01-05
申请人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
发明人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
IPC分类号： H01L2715
CPC分类号： H01L33/30 , H01L33/14 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion (9), a p-side electrode (7) is provided on a portion of a surface of the current dispersion layer (5) through a contact layer (6) comprising p-type GaAs, and an n-side electrode (8) is provided on a back. surface of the GaAs substrate (1). Vickers' hardness of the current dispersion layer (5) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.
摘要翻译： 在n型GaAs衬底（1）上沉积包括InGaAlP基化合物半导体并形成发光层的发光层形成部分（9），包括AlGaAs基化合物半导体的p型电流分散层（5） 在发光层形成部分（9）的表面上，通过包括p型GaAs的接触层（6）在电流分散层（5）的表面的一部分上设置p侧电极（7） 并且在背面设置有n侧电极（8）。 GaAs衬底（1）的表面。 包含AlGaAs的电流色散层（5）的维氏硬度为700以上。 结果，在处理安装或引线接合时，在LED芯片中不产生断裂或裂纹，并且可以提高组装步骤的产量。
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4.发明授权Semiconductor light emitting device using an AlGaInP group or AlGaAs group material 有权使用AlGaInP组或AlGaAs族材料的半导体发光器件公开(公告)号：US06236067B1
公开(公告)日：2001-05-22
申请号：US09203405
申请日：1998-12-02
申请人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
发明人： Yukio Shakuda , Yukio Matsumoto , Shunji Nakata
IPC分类号： H01L3300
摘要： A semiconductor light emitting device is disclosed. An emitting layer forming portion for forming an emitting layer made of a compound semiconductor of AlGaInP group or AlGaAs group including a n-type layer, an active layer and a p-type layer laid one on another is formed on a GaAs substrate. Further, a current diffusion layer of GaP is formed on the front surface of the emitting layer forming portion. The p-type layer between the active layer and the current diffusion layer is formed to the thickness of not less than about 2 &mgr;m, or the current diffusion layer is formed to the thickness of about 3 to 7 &mgr;m. As a result, the semiconductor light emitting device of a high luminance is thus realized, in which the distortion due to the lattice mismatch has no effect on the emitting layer.
摘要翻译： 公开了一种半导体发光器件。 在GaAs衬底上形成用于形成由AlGaInP基的化合物半导体形成的发光层的发光层形成部或包含n型层，有源层和p型层的AlGaAs基。 此外，在发光层形成部分的前表面上形成GaP的电流扩散层。 活性层与电流扩散层之间的p型层形成为不小于2μm的厚度，或者电流扩散层形成为约3〜7μm的厚度。 结果，因此实现了由于晶格失配引起的失真对发光层没有影响的高亮度的半导体发光器件。
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5.发明授权Semiconductor light emitting device having a structure which relieves lattice mismatch 失效具有减轻晶格失配的结构的半导体发光器件
公开(公告)号：US6107648A
公开(公告)日：2000-08-22
申请号：US41694
申请日：1998-03-13
申请人： Yukio Shakuda , Shunji Nakata , Yukio Matsumoto
发明人： Yukio Shakuda , Shunji Nakata , Yukio Matsumoto
摘要： A light emitting layer forming portion is formed of an AlGaInP-based compound semiconductor and having an n-type layer and a p-type layer to form a light emitting layer on the substrate. A large bandgap energy semiconductor layer is provided on a surface of the light emitting layer forming portion to constitute a window layer. A buffer layer is interposed between the light emitting layer forming portion and the large bandgap energy semiconductor layer to relieve lattice mismatch of between the light emitting layer forming portion and the large bandgap energy semiconductor layer. The interposition of this buffer layer provides a light emitting device that is high in light emitting efficiency and excellent in electrical characteristics without degrading the film property of the window layer.
摘要翻译： 发光层形成部分由AlGaInP基化合物半导体形成，并具有n型层和p型层，以在衬底上形成发光层。 在发光层形成部分的表面上提供大的带隙能量半导体层以构成窗口层。 在发光层形成部分和大带隙能量半导体层之间插入缓冲层，以缓解发光层形成部分和大带隙能量半导体层之间的晶格失配。 该缓冲层的插入提供了发光效率高，电特性优异的发光器件，而不降低窗口层的膜特性。
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公开(公告)号：US6107647A
公开(公告)日：2000-08-22
申请号：US79260
申请日：1998-05-15
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal-yAs (0.6.ltoreq.y.ltoreq.0.8) auto-doped in a carrier concentration of 5.times.10.sup.18 -3.times.10.sup.19 cm.sup.-3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
摘要翻译： 半导体发光器件具有形成在衬底上并具有n型层和p型层以提供发光层的发光层形成部分。 在发光层形成部分的表面侧上形成窗口层。 窗口层由载体浓度为5×1018-3×1019cm-3自动掺杂的AllyGal-yAs（0.6≤y≤0.8）形成。 所得到的半导体发光器件由于p型杂质掺杂而不会降低结晶度，从而提供高的发光效率和亮度，而不会遇到器件劣化或损坏。
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公开(公告)号：US06258619B1
公开(公告)日：2001-07-10
申请号：US09337396
申请日：1999-06-22
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers are constituted by the n-type layer and the p-type layer on the substrate. A light emitting layer is formed together with the n-type and p-type layers in the semiconductor overlying layers to emit light. At least one of the n-type layer and the p-type layer is formed by three or more overlying sublayers including a sublayer of AlyGa1-yN (0
摘要翻译： 半导体发光器件包括衬底，由形成在衬底上的氮化镓基化合物半导体形成的n型层和形成在衬底上的由氮化镓基化合物半导体形成的p型层。 半导体覆盖层由衬底上的n型层和p型层构成。 在半导体覆盖层中与n型和p型层一起形成发光层以发光。 n型层和p型层中的至少一层由包括AlyGa1-yN（0
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公开(公告)号：US6156584A
公开(公告)日：2000-12-05
申请号：US48110
申请日：1998-03-26
IPC分类号： H01L21/301 , H01L27/12 , H01L33/32 , H01L33/36 , H01S5/02 , H01S5/323 , H01L21/302
CPC分类号： H01S5/0201 , H01L33/0095 , H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first conductivity type of the semiconductor layer laminate, and on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching the semiconductor layer laminate, in association with the individual chips. Then, the semiconductor layer laminate is etched at boundary portions between the chips to expose the substrate, and the substrate is broken at the exposed portions into the chips. As the semiconductor layer laminate is etched out at the boundary portions between the chips before breaking the wafer, breaking can be facilitated without damaging the light emitting portions of the semiconductor layer laminate. This helps provide high-performance semiconductor light emitting devices.
摘要翻译： 沉积在用于形成多个发光器件芯片的晶片状衬底上的是具有与衬底不同的性质的半导体层层压体。 然后，电极设置在第一导电类型的半导体层层叠体的顶部半导体层上并与之连接，并与第二导电类型的半导体层电连接，通过局部蚀刻半导体层层叠体 ，与个别芯片相关联。 然后，在芯片之间的边界部分处蚀刻半导体层层叠体，使基板露出，使基板在露出部分断裂成芯片。 由于半导体层层叠体在断裂晶片之前在芯片之间的边界部分被蚀刻掉，所以可以在不破坏半导体层叠层的发光部分的情况下进行破坏。 这有助于提供高性能半导体发光器件。
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公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译： 半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。 第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。 通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。 提供与暴露的第二导电类型电连接的第二电极。 第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。 结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。
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公开(公告)号：US06194241B1
公开(公告)日：2001-02-27
申请号：US09059388
申请日：1998-04-14
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
摘要翻译： 半导体层叠部分由覆盖在衬底上并具有n型层和p型层的氮化镓半导体形成，以形成具有pn结或双重结的发光层。 梯度层设置在半导体层叠部分的下层和上层之间的界面部分处，其中梯度层具有从所述下层的组成和上层的组成不同的组成。 利用这种结构，通过减少在衬底上形成的晶格常数不同的半导体层之间的晶格失配，提供了发光效率优异的半导体发光器件。
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