Abstract:
The semiconductor device comprises a substrate, a channel layer formed on the substrate, a first barrier layer formed on the channel layer, being an indirect transition semiconductor layer containing Al and P and being not lattice-matched with the substrate, and an electrode formed above the first barrier layer. The first barrier layer having a wide band gap and having a high barrier to electrons is formed below the electrodes, whereby a high gate turn-on voltage can be available.
Abstract:
In a distributed database system including a plurality of database systems each having a database, wherein a database possessed by one of the database systems serves as an original database, and databases of the remaining database systems are produced by replicating the original database, the presence or absence of update contention of the same data in two database systems is detected. When data susceptible to detection of update contention is updated, an update serial number is produced for the data. The update serial number includes a system identifier for identifying a database system in which the data is updated and an update frequency related to the number of times of updates. The update serial number is accumulatively stored in an update serial number history associated with the data each time the data is updated. When the updated data and the update serial number history associated therewith are transferred to a receiving database system, the contents of the update serial number history associated with the received data is compared with the contents of an update serial number history associated with data corresponding to the received data (target data) in a database of the receiving database system, and a contending state of the received data with the target data is determined based on the result of the comparison in the receiving database system.
Abstract:
An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.
Abstract:
A light intercepting mechanism of a zoom lens barrel includes a movable lens frame which holds a frontmost lens group, and a drive ring which is fitted on an outer peripheral surface of the movable lens frame to relatively rotate, so that when the relative rotation of the drive ring occurs, the movable lens frame is moved in the optical axis direction. The movable lens frame has a dual-cylinder structure having a closed front end and an open rear end. The drive ring has a dual-cylinder structure having a closed rear end and an open front end. The movable lens frame having the dual-cylinder structure and the drive ring having the dual-cylinder structure are fitted one inside the each other.
Abstract:
A push-pull type output circuit is used in the differential amplifier of a voltage converter circuit. The threshold voltage of the driving transistor is set lower than the voltages of the transistors of the other circuits to operate the differential amplifier at a voltage higher than the power supply voltage. By using the push-pull type output circuit, the amplitude increases and it is possible to raise the capacity of the driving transistor. Moreover, by setting the threshold voltage of the driving transistor of the buffering circuit lower than the threshold voltages of the transistors of the other circuits, it is possible to further raise the driving capacity. Increase of the sub-threshold current due to lowering of the threshold voltage can be prevented by operating the differential amplifier at a voltage higher than the power supply voltage.
Abstract:
A memory system is provided which is capable of eliminating deterioration in a processing rate due to possible signal delays between an input/output circuit and memory blocks. Complication of design is also reduced, especially when the scale and chip area of the memory system increase. A memory chip includes a plurality of memory array blocks each including an address buffer and an address counter, and operates on the basis of a local clock cycle. A control circuit is synchronous with a clock of an external device, and synchronous data-transfer circuitry includes a buffer which modulates the transfer rate of serial data which arrives from a memory array block at a local clock cycle so as to be synchronous with the clock of the control circuit. External clock signal lines are not distributed to the memory array blocks.
Abstract:
Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.
Abstract:
In a semiconductor memory, switch circuits are provided so as to inhibit voltage and signal supplies to each of the normal memory blocks when so required. On the other hand, a ROM is provided on the chip so as to store the address of a defective memory block which consumes an excessively large stand-by current when the semiconductor memory is in the stand-by mode. The switch circuits are controlled by the output of the ROM so as to inhibit the voltage and signal supply to the defective memory block. Then, a spare memory block which is substituted for the defective normal memory block receives the voltage and signal supply.
Abstract:
A spatial frequency filter used in a pattern defect detection device, including a pattern which includes a black spot having a diameter expanded by a controlled amount in comparison with the diameter of a black spot on a photosensitive plate obtained by exposure by diffracted light from a pattern on a model specimen.
Abstract:
A light intercepting apparatus of a lens barrel is provided in which at least two lens assemblies, provided in the lens barrel, are adjustable in an optical axis direction. The apparatus includes a cylindrical light intercepting member which isolates a light path, defined between the lens assemblies, from outside light, wherein the light intercepting member is expandable and contractable in accordance with the relative movement of the lens assemblies. The apparatus further includes a holding member which holds an end of the light intercepting member so that the light intercepting member may be expanded or contracted.