公开(公告)号：US11594673B2

公开(公告)日：2023-02-28

申请号：US16367129

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Noriyuki Sato ,  Angeline Smith ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Benjamin Buford ,  Tofizur Rahman ,  Rohan Patil ,  Nafees Kabir ,  Michael Christenson ,  Ian Young ,  Hui Jae Yoo ,  Christopher Wiegand

IPC: H01F10/32 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01F41/34

Abstract: A memory device includes a first electrode including a spin-orbit material, a magnetic junction on a portion of the first electrode and a first structure including a dielectric on a portion of the first electrode. The first structure has a first sidewall and a second sidewall opposite to the first sidewall. The memory device further includes a second structure on a portion of the first electrode, where the second structure has a sidewall adjacent to the second sidewall of the first structure. The memory device further includes a first conductive interconnect above and coupled with each of the magnetic junction and the second structure and a second conductive interconnect below and coupled with the first electrode, where the second conductive interconnect is laterally distant from the magnetic junction and the second structure.

公开(公告)号：US11476412B2

公开(公告)日：2022-10-18

申请号：US16012672

申请日：2018-06-19

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Noriyuki Sato ,  Kevin O'Brien ,  Benjamin Buford ,  Christopher Wiegand ,  Angeline Smith ,  Tofizur Rahman ,  Ian Young

IPC: H01L43/04 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  G11C11/18 ,  H01F10/32 ,  B82Y25/00

Abstract: An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.

公开(公告)号：US11411173B2

公开(公告)日：2022-08-09

申请号：US16009776

申请日：2018-06-15

Applicant: Intel Corporation

Inventor： Angeline Smith ,  Justin Brockman ,  Tofizur Rahman ,  Daniel Ouellette ,  Andrew Smith ,  Juan Alzate Vinasco ,  James ODonnell ,  Christopher Wiegand ,  Oleg Golonzka

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.

公开(公告)号：US11411047B2

公开(公告)日：2022-08-09

申请号：US16128422

申请日：2018-09-11

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Christopher Wiegand ,  Tanay Gosavi ,  Ian Young

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L27/12

Abstract: An apparatus is provided which comprises: a magnetic junction (e.g., a magnetic tunneling junction or spin valve). The apparatus further includes a structure (e.g., an interconnect) comprising spin orbit material, the structure adjacent to the magnetic junction; first and second transistors. The first transistor is coupled to a bit-line and a first word-line, wherein the first transistor is adjacent to the magnetic junction. The second transistor is coupled to a first select-line and a second word-line, wherein the second transistor is adjacent to the structure, wherein the interconnect is coupled to a second select-line, and wherein the magnetic junction is between the first and second transistors.

公开(公告)号：US11367749B2

公开(公告)日：2022-06-21

申请号：US16022564

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Noriyuki Sato ,  Angeline Smith ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Tofizur Rahman ,  Gary Allen ,  Atm G. Sarwar ,  Ian Young ,  Hui Jae Yoo ,  Christopher Wiegand ,  Benjamin Buford

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12 ,  H01F41/34

Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.

公开(公告)号：US11264558B2

公开(公告)日：2022-03-01

申请号：US16128426

申请日：2018-09-11

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Kaan Oguz ,  Chia-Ching Lin ,  Christopher Wiegand ,  Tanay Gosavi ,  Ian Young

IPC: H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

Abstract: An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

公开(公告)号：US11062752B2

公开(公告)日：2021-07-13

申请号：US16246358

申请日：2019-01-11

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  James Pellegren ,  Angeline Smith ,  Christopher Wiegand ,  Noriyuki Sato ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Benjamin Buford ,  Ian Young

IPC: G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

公开(公告)号：US20200227104A1

公开(公告)日：2020-07-16

申请号：US16246358

申请日：2019-01-11

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  James Pellegren ,  Angeline Smith ,  Christopher Wiegand ,  Noriyuki Sato ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Benjamin Buford ,  Ian Young

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/12

Abstract: A perpendicular spin orbit torque memory device includes a first electrode having tungsten and at least one of nitrogen or oxygen and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first magnet, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

公开(公告)号：US20200083286A1

公开(公告)日：2020-03-12

申请号：US16128422

申请日：2018-09-11

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Christopher Wiegand ,  Tanay Gosavi ,  Ian Young

IPC: H01L27/22 ,  H01L27/12 ,  H01L43/02 ,  H01L43/10

Abstract: An apparatus is provided which comprises: a magnetic junction (e.g., a magnetic tunneling junction or spin valve). The apparatus further includes a structure (e.g., an interconnect) comprising spin orbit material, the structure adjacent to the magnetic junction; first and second transistors. The first transistor is coupled to a bit-line and a first word-line, wherein the first transistor is adjacent to the magnetic junction. The second transistor is coupled to a first select-line and a second word-line, wherein the second transistor is adjacent to the structure, wherein the interconnect is coupled to a second select-line, and wherein the magnetic junction is between the first and second transistors.

公开(公告)号：US20150188033A1

公开(公告)日：2015-07-02

申请号：US14140758

申请日：2013-12-26

Applicant: INTEL CORPORATION

Inventor： Daniel R. LAMBORN ,  Oleg Golonzka ,  Christopher Wiegand

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.

Abstract translation: 描述形成存储器件结构的方法。 这些方法可以包括在磁性隧道结结构的顶部电极上形成非导电间隔物材料，然后在蚀刻磁性体的底部电极之前在磁性隧道结的非导电间隔物材料上形成高选择性材料 隧道交界处。