中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.031 seconds)

    Transistor, method of manufacturing transistor, and method of operating transistor
    31.
    发明申请
    Transistor, method of manufacturing transistor, and method of operating transistor 失效
    晶体管，晶体管的制造方法以及晶体管的工作方法

    公开(公告)号：US20090186444A1

    公开(公告)日：2009-07-23

    申请号：US12216742

    申请日：2008-07-10

    Applicant: Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    Inventor： Choong-Rae Cho ,  In-Kyeong Yoo ,  Myoung-Jae Lee

    IPC: H01L21/20

    CPC classification number: H01L29/685

    Abstract: A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.

    Abstract translation: 提供其通道的物理特性根据施加的电压而改变的晶体管，并且提供其制造和操作方法。 晶体管可以包括基板上的第一导电层，相继层叠在第一导电层上的相变层和第二导电层，形成在第二导电层上的第一电流方向限制单元和第二电流方向限制单元 通过在空间内分离，分别形成在第一电流方向限制单元和第二电流方向限制单元上的第三导电层和第四导电层，连接到第三导电层的字线，连接到第三导电层的位线 第四导电层和连接到字线的降压单元。

    Semiconductor memory device having metal-insulator transition film resistor
    34.
    发明申请
    Semiconductor memory device having metal-insulator transition film resistor 有权
    具有金属 - 绝缘体转移膜电阻器的半导体存储器件

    公开(公告)号：US20070085122A1

    公开(公告)日：2007-04-19

    申请号：US11485340

    申请日：2006-07-13

    Applicant: Jae-Woong Hyun ,  In-Kyeong Yoo ,  Yoon-Dong Park ,  Choong-Rae Cho ,  Sung-Il Cho

    Inventor： Jae-Woong Hyun ,  In-Kyeong Yoo ,  Yoon-Dong Park ,  Choong-Rae Cho ,  Sung-Il Cho

    IPC: H01L29/94

    CPC classification number: H01L27/108 ,  H01L27/101 ,  H01L27/2436 ,  H01L45/146

    Abstract: A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.

    Abstract translation: 半导体存储器件可以具有较低的漏电流和/或更高的可靠性，例如较长的保留时间和/或更短的刷新时间。 该装置可以包括开关装置和电容器。 开关器件的源极可以连接到金属 - 绝缘体转变膜电阻器的第一端，并且电容器的至少一个电极可以连接到金属 - 绝缘体转变膜电阻器的第二端。 金属 - 绝缘体转变膜电阻器可以根据提供给其第一和第二端的电压在绝缘体和导体之间转变。

    Memory device having a transistor and one resistant element as a storing means and method for driving the memory device
    38.
    发明申请
    Memory device having a transistor and one resistant element as a storing means and method for driving the memory device 有权
    具有晶体管和一个电阻元件作为存储装置的存储装置和用于驱动存储装置的方法

    公开(公告)号：US20050095775A1

    公开(公告)日：2005-05-05

    申请号：US10995116

    申请日：2004-11-24

    Applicant: In-Kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    Inventor： In-Kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    IPC: H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

    CPC classification number: H01L27/11206 ,  G11C16/0475 ,  H01L27/112

    Abstract: A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

    Abstract translation: 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

    Method for preventing polarization loss in ferroelectric capacitors by controlling imprint
    39.
    发明授权
    Method for preventing polarization loss in ferroelectric capacitors by controlling imprint 失效
    通过控制印记防止铁电电容器偏振损耗的方法

    公开(公告)号：US5740100A

    公开(公告)日：1998-04-14

    申请号：US539469

    申请日：1995-10-05

    Applicant: In-Kyeong Yoo

    Inventor： In-Kyeong Yoo

    IPC: G11C11/22

    CPC classification number: G11C11/22

    Abstract: Polarization loss in ferroelectric capacitors can be prevented by consecutively applying partial switching pulses to an imprinted ferroelectric capacitor, which is able to achieve a certain polarization state and the zero polarization state simultaneously, under the condition of utilizing the bistable polarization states as memory logic. This effects an improvement in both the fatigue properties and life expectancy of ferroelectric capacitors.

    Abstract translation: 通过在利用双稳态极化状态作为存储器逻辑的条件下，能够将部分切换脉冲连续施加到能够实现一定极化状态和零极化状态的压印铁电电容器，可以防止铁电电容器的极化损失。 这样可以提高铁电电容器的疲劳性能和寿命。

Patent Agency Ranking