公开(公告)号：US20210013310A1

公开(公告)日：2021-01-14

申请号：US16926695

申请日：2020-07-11

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Romain Esteve ,  Moriz Jelinek ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/16 ,  H01L29/06

Abstract: First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.

公开(公告)号：US20200098911A1

公开(公告)日：2020-03-26

申请号：US16578990

申请日：2019-09-23

Applicant: Infineon Technologies AG

Inventor： Hans Peter Felsl ,  Moriz Jelinek ,  Volodymyr Komarnitskyy ,  Konrad Schraml ,  Hans-Joachim Schulze

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/739

Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.

公开(公告)号：US10529838B2

公开(公告)日：2020-01-07

申请号：US15831247

申请日：2017-12-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Moriz Jelinek ,  Johannes Laven ,  Helmut Oefner ,  Werner Schustereder

IPC: H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/324 ,  H01L21/263 ,  H01L21/66

Abstract: A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.

公开(公告)号：US10128328B2

公开(公告)日：2018-11-13

申请号：US15793530

申请日：2017-10-25

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Hans Weber ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Werner Schustereder

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/36 ,  H01L29/167 ,  H01L29/32 ,  H01L21/225 ,  H01L29/10 ,  H01L29/08 ,  H01L29/872 ,  H01L21/66 ,  H01L21/78 ,  H01L21/265 ,  H01L21/30 ,  H01L29/78 ,  H01L29/739 ,  H01L21/324

Abstract: Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. Based on the information about the cumulative dopant concentration and a dissociation rate of the hydrogen-related donors, a main temperature profile is determined for dissociating a defined portion of the hydrogen-related donors. The semiconductor substrate is subjected to a main heat treatment applying the main temperature profile to obtain, in the surface portion, a final total dopant concentration deviating from a target dopant concentration by not more than 15%.

公开(公告)号：US09972704B2

公开(公告)日：2018-05-15

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/00 ,  H01L29/739 ,  H01L21/263 ,  H01L21/324 ,  H01L29/10 ,  H01L29/36 ,  H01L21/66

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

公开(公告)号：US20180019306A1

公开(公告)日：2018-01-18

申请号：US15718189

申请日：2017-09-28

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Michael Stadtmueller

IPC: H01L29/06 ,  H01L29/739 ,  H01L21/324 ,  H01L21/8234 ,  H01L21/66

CPC classification number: H01L29/0692 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/8234 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7802 ,  H01L29/8611

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

公开(公告)号：US09825131B2

公开(公告)日：2017-11-21

申请号：US15146459

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Michael Stadtmueller

IPC: H01L21/00 ,  H01L29/06 ,  H01L21/324 ,  H01L21/8234 ,  H01L29/739

CPC classification number: H01L29/0692 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/8234 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/8611

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

公开(公告)号：US12224317B2

公开(公告)日：2025-02-11

申请号：US18220989

申请日：2023-07-12

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Jaeger ,  Moriz Jelinek ,  Daniel Schloegl ,  Benedikt Stoib

IPC: H01L29/08 ,  H01L21/265 ,  H01L21/322 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739

Abstract: A method of manufacturing a vertical power semiconductor device includes forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms, and forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks, wherein a first impurity peak of the plurality of impurity peaks is set a larger concentration than a second impurity peak of the plurality of impurity peaks, wherein the first impurity peak includes hydrogen and the second impurity peak includes helium.

公开(公告)号：US20230317456A1

公开(公告)日：2023-10-05

申请号：US18127732

申请日：2023-03-29

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Daniel Schlögl ,  Francisco Javier Santos Rodriguez

IPC: H01L21/265 ,  H01L21/04 ,  H01L21/268 ,  H01L29/20 ,  H01L21/78 ,  H01L21/768

CPC classification number: H01L21/265 ,  H01L21/046 ,  H01L21/268 ,  H01L29/20 ,  H01L21/78 ,  H01L21/76838

Abstract: A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. Semiconductor device elements are formed in the semiconductor body by processing the semiconductor body at the first surface. A wiring area is formed over the first surface of the semiconductor body. The semiconductor body is attached to a carrier via the wiring area. Thereafter, ions are implanted through the second surface into the semiconductor body. The ions are ions of a doping element, or ions, which induce doping by complex formation, or ions of a heavy metal. A surface region of the semiconductor body at the second surface is irradiated with a plurality of laser pulses. Thereafter, the carrier is removed from the semiconductor body.

公开(公告)号：US11569392B2

公开(公告)日：2023-01-31

申请号：US17466342

申请日：2021-09-03

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Jaeger ,  Moriz Jelinek ,  Daniel Schloegl ,  Benedikt Stoib

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L29/08 ,  H01L29/36

Abstract: A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.