公开(公告)号：US20150091088A1

公开(公告)日：2015-04-02

申请号：US14043971

申请日：2013-10-02

Applicant: Infineon Technologies AG

Inventor： Martin Vielemeyer ,  Andreas Meiser ,  Till Schloesser ,  Franz Hirler ,  Martin Poelzl

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1083 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/2822 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7816 ,  H01L29/7825

Abstract: An integrated circuit includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, a gate electrode, and a gate dielectric adjacent to the gate electrode. The gate electrode is disposed adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the main surface between the source region and the drain region. The gate dielectric has a thickness that varies at different positions of the gate electrode.

Abstract translation: 集成电路包括具有主表面的半导体衬底中的晶体管。 晶体管包括源极区，漏极区，沟道区，漂移区，栅电极和与栅电极相邻的栅极电介质。 栅电极设置成与沟道区域的至少两侧相邻。 沟道区域和漂移区域沿着平行于源极区域和漏极区域之间的主表面的第一方向设置。 栅极电介质具有在栅电极的不同位置处变化的厚度。

公开(公告)号：US20140151758A1

公开(公告)日：2014-06-05

申请号：US13692397

申请日：2012-12-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/66666 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7825 ,  H01L29/785

Abstract: A semiconductor device includes a transistor, formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode being adjacent to the channel region, the gate electrode configured to control a conductivity of a channel formed in the channel region. The channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a ridge extending along the first direction and the drift zone including a superjunction layer stack.

Abstract translation: 半导体器件包括形成在具有第一主表面的半导体衬底中的晶体管。 所述晶体管包括源极区，漏极区，沟道区，漂移区以及与所述沟道区相邻的栅极，所述栅电极被配置为控制在所述沟道区中形成的沟道的导电性。 沟道区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于第一主表面。 沟道区具有沿着第一方向延伸的脊的形状，并且漂移区包括超结层层叠。

公开(公告)号：US20240210467A1

公开(公告)日：2024-06-27

申请号：US18394821

申请日：2023-12-22

Applicant: Infineon Technologies AG

Inventor： Till Schloesser ,  Axel Reithofer ,  Jens Berrenscheen

IPC: G01R31/28

CPC classification number: G01R31/2884 ,  G01R31/2834 ,  H01L29/402

Abstract: One exemplary embodiment relates to a circuit which is integrated into a semiconductor substrate and which comprises a lateral field effect transistor having a drift region and a field plate electrode, which is isolated from the drift region by an isolation zone. The integrated circuit further comprises a first terminal, which is coupled to the field plate electrode, for applying a test voltage to the field plate electrode in a test operating mode. An electronic switch is configured to connect the field plate electrode to a circuit node that is at a reference voltage in a normal operating mode of the integrated circuit. The integrated circuit further comprises a second terminal, which is connected to a control terminal of the electronic switch and is configured to receive a control signal for switching on or off the electronic switch.

公开(公告)号：US10700061B2

公开(公告)日：2020-06-30

申请号：US15351816

申请日：2016-11-15

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Dirk Ahlers ,  Till Schloesser

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H03K17/687

Abstract: A semiconductor device includes a first transistor and a second transistor in a semiconductor substrate. The first transistor includes a first drain contact electrically connected to a first drain region, the first drain contact including a first drain contact portion and a second drain contact portion. The first drain contact portion includes a drain conductive material in direct contact with the first drain region. The second transistor includes a second source contact electrically connected to a second source region. The second source contact includes a first source contact portion and a second source contact portion. The first source contact portion includes a source conductive material in direct contact with the second source region.

公开(公告)号：US10582580B2

公开(公告)日：2020-03-03

申请号：US15139800

申请日：2016-04-27

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H02M3/156 ,  H05B33/08 ,  H01L27/088 ,  H02M1/088

Abstract: A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction. The body region is adjacent to the source region and the drain region. The switch further comprises a source contact and a body contact portion, the source contact being electrically connected to a source terminal. The body contact portion is in contact with the source contact and is electrically connected to the body region.

公开(公告)号：US20200027969A1

公开(公告)日：2020-01-23

申请号：US16514292

申请日：2019-07-17

Applicant: Infineon Technologies AG

Inventor： Till Schloesser ,  Christian Kampen ,  Andreas Meiser

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06

Abstract: A method for producing a semiconductor component includes: providing a semiconductor body having a first dopant of a first conductivity type; forming a first trench in the semiconductor body starting from a first side; filling the first trench with a semiconductor filler material; forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant; forming a second trench in the semiconductor body starting from the first side; and forming a trench structure in the second trench.

公开(公告)号：US10109734B2

公开(公告)日：2018-10-23

申请号：US15095615

申请日：2016-04-11

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417

Abstract: A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first conductivity type, a drain region, a body region of a second conductivity type, different from the first conductivity type, and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface. The source region, the body region and the drain region are arranged along the first direction. The body region comprises first ridges extending along the first direction, the first ridges being disposed between adjacent gate trenches in the semiconductor body. The body region further comprises a second ridge. A width of the second ridge is larger than a width of the first ridges, the widths being measured in a second direction perpendicular to the first direction.

公开(公告)号：US20170358650A1

公开(公告)日：2017-12-14

申请号：US15614651

申请日：2017-06-06

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Franz Hirler ,  Till Schloesser

IPC: H01L29/40 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/404 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/7825

Abstract: A semiconductor device includes a transistor in a semiconductor substrate. The transistor includes a drift zone of a first conductivity type adjacent to a drain region, and a first field plate and a second field plate adjacent to the drift zone. The second field plate is arranged between the first field plate and the drain region. The second field plate is electrically connected to a contact portion arranged in the drift zone. The transistor further includes an intermediate portion of the first conductivity type at a lower doping concentration than the drift zone. A distance between the intermediate portion and the drain region is smaller than the distance between the contact portion and the drain region.

公开(公告)号：US09620637B2

公开(公告)日：2017-04-11

申请号：US13902151

申请日：2013-05-24

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser ,  Franz Hirler

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/113 ,  H01L27/115 ,  H01L21/28 ,  H01L23/48 ,  H01L29/88 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L29/7813 ,  H01L29/66204 ,  H01L29/66734 ,  H01L29/7391

Abstract: A semiconductor device formed in a semiconductor substrate includes a source region, a drain region, a gate electrode, and a body region disposed between the source region and the drain region. The gate electrode is disposed adjacent at least two sides of the body region, and the source region and the gate electrode are coupled to a source terminal. A width of the body region between the two sides of the body region is selected so that the body region is configured to be fully depleted.

公开(公告)号：US20160322347A1

公开(公告)日：2016-11-03

申请号：US15139800

申请日：2016-04-27

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Till Schloesser

IPC: H01L27/06 ,  H05B37/02 ,  H05B33/08 ,  H02M3/155 ,  H05B1/02

Abstract: A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction. The body region is adjacent to the source region and the drain region. The switch further comprises a source contact and a body contact portion, the source contact being electrically connected to a source terminal. The body contact portion is in contact with the source contact and is electrically connected to the body region.

Abstract translation: 开关包括具有第一主表面的半导体衬底中的场效应晶体管。 场效应晶体管包括源区域，漏极区域，体区域和在体区域处的栅电极，栅电极被配置为控制在体区域中形成的沟道的导电性。 栅电极设置在栅极沟槽中。 主体区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于第一主表面。 身体区域具有沿着第一方向延伸的脊的形状。 体区域与源极区域和漏极区域相邻。 该开关还包括源极接触部和主体接触部，该源极接触部电连接到源极端子。 身体接触部分与源极接触部分接触并且与身体区域电连接。