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    TOUCH DISPLAY DEVICE
    33.
    发明申请
    TOUCH DISPLAY DEVICE 审中-公开

    公开(公告)号：US20180190720A1

    公开(公告)日：2018-07-05

    申请号：US15609156

    申请日：2017-05-31

    Applicant: InnoLux Corporation

    Inventor： Jui-Jen YUEH ,  Kuan-Feng LEE

    IPC: H01L27/32 ,  H03K17/96 ,  G06F3/041

    CPC classification number: H01L27/323 ,  G06F3/0412 ,  G06F3/0416 ,  G09G3/3225

    Abstract: A touch display device is provided. The touch display device includes a substrate; a driving structure layer disposed on the substrate, wherein the driving structure layer including a first switch and a second switch; a display structure layer disposed on the driving structure layer; an insulating layer disposed on the display structure layer; and a touch structure layer disposed on the insulating layer, wherein the touch structure layer is electrically connected to the first switch, and the first switch is electrically connected to the second switch.

    DISPLAY DEVICE
    34.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20180145094A1

    公开(公告)日：2018-05-24

    申请号：US15876383

    申请日：2018-01-22

    Applicant: InnoLux Corporation

    Inventor： Tzu-Min YAN ,  Ming-Chang LIN ,  Kuan-Feng LEE

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1251 ,  G02F1/133345 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78696

    Abstract: A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.

    DISPLAY DEVICE
    37.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20160315201A1

    公开(公告)日：2016-10-27

    申请号：US15067557

    申请日：2016-03-11

    Applicant: InnoLux Corporation

    Inventor： Kuan-Feng LEE ,  Kuo-Chang CHIANG

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

    CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

    Abstract: A display device is provided. A thin film transistor structure of the display device includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate and the gate electrode, a channel layer on the gate insulation layer and corresponding to the gate electrode, and a source electrode and a drain electrode contacting two sides of the channel layer, respectively, and extending onto the gate insulation layer. The channel layer includes a first metal oxide semiconductor layer, which includes (1) tin and (2) at least one of gallium, hafnium, and aluminum.

    Abstract translation: 提供显示装置。 显示装置的薄膜晶体管结构包括基板，设置在基板上的栅极电极，设置在基板上的栅极绝缘层和栅电极，栅极绝缘层上的对应于栅电极的沟道层，以及 源极电极和漏极电极分别与沟道层的两侧接触并延伸到栅极绝缘层上。 沟道层包括第一金属氧化物半导体层，其包括（1）锡和（2）镓，铪和铝中的至少一种。

    DISPLAY PANEL AND DISPLAY DEVICE
    38.
    发明申请
    DISPLAY PANEL AND DISPLAY DEVICE 有权
    显示面板和显示设备

    公开(公告)号：US20160093645A1

    公开(公告)日：2016-03-31

    申请号：US14750674

    申请日：2015-06-25

    Applicant: InnoLux Corporation

    Inventor： Kuan-Feng LEE ,  Jung-Fang CHANG

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1248 ,  G02F1/1339 ,  G02F2001/133388 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/78606 ,  H01L29/7869 ,  H01L51/5237 ,  H01L51/5246

    Abstract: A display panel and a display are disclosed. A display panel has an active area and a peripheral area disposed adjacent to the active area and comprises a first substrate, a second substrate, a first insulating layer, a second insulating layer and an organic layer. The second substrate is disposed opposite the first substrate. The first insulating layer is disposed on the side of the first substrate facing the second substrate. The organic layer covers the first insulating layer. The second insulating layer covers the organic layer and includes at least a first opening which is disposed in the peripheral area and exposes the organic layer.

    Abstract translation: 公开了显示面板和显示器。 显示面板具有与有源区域相邻设置的有源区域和周边区域，并且包括第一衬底，第二衬底，第一绝缘层，第二绝缘层和有机层。 第二基板与第一基板相对设置。 第一绝缘层设置在第一基板的面向第二基板的一侧。 有机层覆盖第一绝缘层。 第二绝缘层覆盖有机层，并且至少包括设置在周边区域中并露出有机层的第一开口。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY
    39.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY 有权
    薄膜晶体管基板和显示器

    公开(公告)号：US20150084034A1

    公开(公告)日：2015-03-26

    申请号：US14560570

    申请日：2014-12-04

    Applicant: INNOLUX CORPORATION

    Inventor： Kuan-Feng LEE

    IPC: H01L27/32 ,  H01L29/417 ,  H01L21/02 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L21/02362 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

    Abstract: An embodiment of the invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate electrode disposed on the substrate; a first diffusion barrier layer disposed on the substrate and covering an upper surface and a ring sidewall of the gate electrode; a gate insulating layer disposed on the first diffusion barrier layer; an active layer disposed on the gate insulating layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the active layer; a drain electrode disposed on the substrate and electrically connected to the active layer; and a protective layer covering the source electrode and the drain electrode.

    Abstract translation: 本发明的实施例提供了一种薄膜晶体管衬底，包括：衬底; 以及多个晶体管，其中每个所述晶体管包括设置在所述衬底上的栅电极; 第一扩散阻挡层，设置在所述基板上并覆盖所述栅电极的上表面和环侧壁; 设置在所述第一扩散阻挡层上的栅绝缘层; 设置在所述栅极绝缘层上并在所述栅电极上方的有源层; 源电极，其设置在所述基板上并电连接到所述有源层; 漏电极，设置在所述基板上并电连接到所述有源层; 以及覆盖源电极和漏电极的保护层。

    THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND DISPLAY
    40.
    发明申请
    THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND DISPLAY 有权
    薄膜晶体管及其制造方法及显示

    公开(公告)号：US20130207103A1

    公开(公告)日：2013-08-15

    申请号：US13764382

    申请日：2013-02-11

    Applicant: INNOCOM TECHNOLOGY(SHENZHEN) CO., LTD ,  CHIMEI INNOLUX CORPORATION

    Inventor： Kuan-Feng LEE

    IPC: H01L29/66 ,  H01L29/786

    CPC classification number: H01L29/66742 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

    Abstract: An embodiment of the invention provides a manufacturing method of a thin-film transistor includes: providing a substrate; sequentially forming a gate electrode, a gate insulating layer, and an active layer on the substrate; forming an insulating metal oxide layer covering the active layer, wherein the insulating metal oxide layer including a metal oxide of a first metal; forming a metal layer covering the active layer, wherein the metal layer includes a second metal; forming a source electrode and a drain electrode on the metal layer with a trench separating therebetween; removing the metal layer exposed by the trench; and performing an annealing process to the metal layer and the insulating metal oxide layer, such that the metal layer reacts with the insulating metal oxide layer overlapping the metal layer to form a conducting composite metal oxide layer including the first metal and the second metal.

    Abstract translation: 本发明的实施例提供一种薄膜晶体管的制造方法，包括：提供衬底; 在基板上依次形成栅电极，栅极绝缘层和有源层; 形成覆盖有源层的绝缘金属氧化物层，其中所述绝缘金属氧化物层包括第一金属的金属氧化物; 形成覆盖有源层的金属层，其中所述金属层包括第二金属; 在所述金属层上形成源电极和漏电极，其间分开沟槽; 去除由沟槽暴露的金属层; 对所述金属层和所述绝缘金属氧化物层进行退火处理，使得所述金属层与与所述金属层重叠的所述绝缘金属氧化物层反应，形成包含所述第一金属和所述第二金属的导电复合金属氧化物层。

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