公开(公告)号：US08562750B2

公开(公告)日：2013-10-22

申请号：US12640926

申请日：2009-12-17

Applicant: Jack Chen ,  Yunsang Kim

Inventor： Jack Chen ,  Yunsang Kim

IPC: B08B7/04

CPC classification number: H01L21/02274 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/509 ,  H01L21/02087 ,  H01L21/02115 ,  H01L21/3083 ,  H01L21/31144

Abstract: A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.

Abstract translation: 提供了一种用于处理斜边的方法和装置。 将衬底放置在斜面处理室中，并且使用限制在斜面处理室的周边区域中的钝化等离子体在衬底的仅一个斜面区域周围形成钝化层。 衬底可以经历随后的半导体工艺，在此期间衬底的斜边缘区域被钝化层保护。 或者，可以使用在处理室的外围区域中形成的图案化等离子体对钝化层进行图案化，通过增加等离子体限制来限制图形化等离子体。 去除斜面区域的外边缘部分上的钝化层，同时保持斜面区域的内部部分上的钝化层。 可以使用图案化的钝化层作为保护掩模来清洁基底的斜边缘。

公开(公告)号：US08500951B2

公开(公告)日：2013-08-06

申请号：US12730146

申请日：2010-03-23

Applicant: Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

Inventor： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

Abstract: A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

Abstract translation: 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

公开(公告)号：US20130166777A1

公开(公告)日：2013-06-27

申请号：US13410410

申请日：2012-03-02

Applicant: Jack Chen ,  Rupen Chanda

Inventor： Jack Chen ,  Rupen Chanda

IPC: G06F15/16 ,  G06F3/00

CPC classification number: H04M1/72522 ,  H04L67/303 ,  H04M1/72525 ,  H04N21/25825 ,  H04N21/41407 ,  H04W4/18 ,  H04W8/24 ,  H04W28/06 ,  H04W28/18

Abstract: Systems and methods, including computer software implementations, involve identifying a first set of device capabilities associated with an electronic device. The first set of device capabilities include one or more device capabilities. A description of the first set of device capabilities is provided to a remote source, and a first device profile identifier is received from the remote source. The first device profile identifier is associated with the first set of device capabilities. The first device profile identifier is stored on the electronic device, and the received first device profile identifier is included in a communication to the remote source.

Abstract translation: 包括计算机软件实现的系统和方法涉及识别与电子设备相关联的第一组设备能力。 第一套设备功能包括一个或多个设备功能。 将第一组设备能力的描述提供给远程源，并且从远程源接收第一设备配置文件标识符。 第一设备配置文件标识符与第一组设备能力相关联。 第一设备配置文件标识符存储在电子设备上，并且所接收的第一设备配置文件标识符被包括在与远程源的通信中。

公开(公告)号：US08384222B2

公开(公告)日：2013-02-26

申请号：US13030887

申请日：2011-02-18

Applicant: Chia-Lun Tsai ,  Ching-Yu Ni ,  Jack Chen ,  Wen-Cheng Chien

Inventor： Chia-Lun Tsai ,  Ching-Yu Ni ,  Jack Chen ,  Wen-Cheng Chien

IPC: H01L23/48

CPC classification number: H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A semiconductor device and manufacturing method thereof are disclosed. The device comprises a semiconductor die, a passivation layer, a wiring redistribution layer (RDL), an Ni/Au layer, and a solder mask. The semiconductor die comprises a top metal exposed in an active surface thereof. The passivation layer overlies the active surface of the semiconductor die, and comprises a through passivation opening overlying the top metal. The wiring RDL, comprising an Al layer, overlies the passivation layer, and electrically connects to the top metal via the passivation opening. The solder mask overlies the passivation layer and the wiring RDL, exposing a terminal of the wiring RDL.

Abstract translation: 公开了一种半导体器件及其制造方法。 该器件包括半导体管芯，钝化层，布线再分布层（RDL），Ni / Au层和焊料掩模。 半导体管芯包括在其活性表面中暴露的顶部金属。 钝化层覆盖半导体管芯的有源表面，并且包括覆盖顶部金属的贯通钝化开口。 包括Al层的布线RDL覆盖钝化层，并通过钝化开口电连接到顶部金属。 焊接掩模覆盖钝化层和布线RDL，露出布线RDL的端子。

公开(公告)号：US08368508B2

公开(公告)日：2013-02-05

申请号：US11493116

申请日：2006-07-26

Applicant: Jack Chen

Inventor： Jack Chen

IPC: G05B19/02

CPC classification number: G08C19/00 ,  G05B19/0421 ,  G05B2219/2208 ,  G05B2219/25106 ,  G05B2219/25205 ,  G05B2219/2637

Abstract: To key an identification code of a controlling member to a code reader of a function controller for controlling a function, each controlling member is fitted with a card reader and is configured to adopt the code on the card as the identification code to be attached as the identification portion of any message imparted into a signal line. In similar fashion, each of the function controllers includes a card reader for reading a card bearing a code and the function controller is configured to adopt the code read from the card as being the identification code sought by the function controller as identifying a message as originating from its associated controlling member.

Abstract translation: 为了将控制构件的识别码键入用于控制功能的功能控制器的代码阅读器，每个控制构件都装有读卡器，并且被配置为采用卡上的代码作为要附加的识别码作为 给信号线中的任何信息的识别部分。 以类似的方式，每个功能控制器包括用于读取承载代码的卡的读卡器，并且功能控制器被配置为采用从卡读取的代码作为功能控制器寻求的识别代码来识别作为始发的消息 从其相关的控制构件。

公开(公告)号：US08131875B1

公开(公告)日：2012-03-06

申请号：US11945233

申请日：2007-11-26

Applicant: Jack Chen ,  Rupen Chanda

Inventor： Jack Chen ,  Rupen Chanda

IPC: G06F15/16 ,  G06F3/00

CPC classification number: H04M1/72522 ,  H04L67/303 ,  H04M1/72525 ,  H04N21/25825 ,  H04N21/41407 ,  H04W4/18 ,  H04W8/24 ,  H04W28/06 ,  H04W28/18

Abstract: Systems and methods, including computer software implementations, involve identifying a first set of device capabilities associated with an electronic device. The first set of device capabilities include one or more device capabilities. A description of the first set of device capabilities is provided to a remote source, and a first device profile identifier is received from the remote source. The first device profile identifier is associated with the first set of device capabilities. The first device profile identifier is stored on the electronic device, and the received first device profile identifier is included in a communication to the remote source.

Abstract translation: 包括计算机软件实现的系统和方法涉及识别与电子设备相关联的第一组设备能力。 第一套设备功能包括一个或多个设备功能。 将第一组设备能力的描述提供给远程源，并且从远程源接收第一设备配置文件标识符。 第一设备配置文件标识符与第一组设备能力相关联。 第一设备配置文件标识符存储在电子设备上，并且所接收的第一设备配置文件标识符被包括在与远程源的通信中。

公开(公告)号：US20110287323A1

公开(公告)日：2011-11-24

申请号：US12783738

申请日：2010-05-20

Applicant: Jack Chen

Inventor： Jack Chen

IPC: H01M2/18

CPC classification number: H01M10/0413 ,  H01M2/18 ,  H01M4/70 ,  H01M10/0431 ,  H01M10/045 ,  H01M10/0459 ,  H01M2004/025

Abstract: A battery core is made from a strip of insulating material folded longitudinally to form parallel panels. In one embodiment there are four panels and in another five panels. A positive electrode strip has an exposed foil center strip and positive electrode material along both edges. The positive electrode is folded around one fold of the insulator with the strip of foil exposed at the fold. A negative electrode strip has an exposed center strip and negative electrode material along both edges. The negative electrode is folded around a different fold of the insulator with the strip of foil exposed.

Abstract translation: 电池芯由纵向折叠的绝缘材料条制成以形成平行面板。 在一个实施例中，有四个面板和另外五个面板。 正极条具有沿着两个边缘的暴露的箔中心条和正电极材料。 正电极折叠在绝缘体的一倍之上，箔条暴露在折叠处。 负极带沿着两个边缘具有暴露的中心带和负极材料。 负极围绕绝缘体的不同折叠折叠，箔条暴露。

公开(公告)号：US08053885B2

公开(公告)日：2011-11-08

申请号：US12318876

申请日：2009-01-12

Applicant: Bily Wang ,  Sung-Yi Hsiao ,  Jack Chen

Inventor： Bily Wang ,  Sung-Yi Hsiao ,  Jack Chen

IPC: H01L23/485

CPC classification number: H01L29/0657 ,  H01L21/6836 ,  H01L23/31 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/96 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/0107 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A wafer level vertical diode package structure includes a first semiconductor layer, a second semiconductor layer, an insulative unit, a first conductive structure, and a second conductive structure. The second semiconductor layer is connected with one surface of the first semiconductor layer. The insulative unit is disposed around a lateral side of the first semiconductor layer and a lateral side of the second semiconductor layer. The first conductive structure is formed on a top surface of the first semiconductor layer and on one lateral side of the insulative layer. The second conductive structure is formed on a top surface of the second semiconductor layer and on another opposite lateral side of the insulative layer.

Abstract translation: 晶圆级垂直二极管封装结构包括第一半导体层，第二半导体层，绝缘单元，第一导电结构和第二导电结构。 第二半导体层与第一半导体层的一个表面连接。 绝缘单元围绕第一半导体层的侧面和第二半导体层的横向侧设置。 第一导电结构形成在第一半导体层的顶表面和绝缘层的一个侧面上。 第二导电结构形成在第二半导体层的顶表面上，在绝缘层的另一个相对的侧面上。

公开(公告)号：US07768376B2

公开(公告)日：2010-08-03

申请号：US11924016

申请日：2007-10-25

Applicant: Chang Liu ,  Nannan Chen ,  Jonathan Engel ,  Jack Chen ,  Zhifang Fan

Inventor： Chang Liu ,  Nannan Chen ,  Jonathan Engel ,  Jack Chen ,  Zhifang Fan

IPC: H01C7/10

CPC classification number: G01K7/22 ,  G01K7/226 ,  G01K2213/00

Abstract: This invention provides thermal sensors and imagers that are flexible and capable of conforming to curved surfaces and corresponding methods of making and methods of thermal sensing. The thermal sensors contain an array of thermal resistors patterned in a row and column configuration, with each thermal resistor electrically isolated from other thermal resistors within the sensor. Thermal information is obtained from a region by measuring the resistance of each thermal resistor and calculating a thermal resistance for each entry of the array.

Abstract translation: 本发明提供了柔性且能够符合弯曲表面的热传感器和成像器，以及相应的制造方法和热感测方法。 热传感器包含以行和列配置图案化的热电阻阵列，每个热敏电阻器与传感器内的其他热电阻器电隔离。 通过测量每个热敏电阻的电阻并计算阵列的每个入口的热阻，从区域获得热信息。

公开(公告)号：US20100176502A1

公开(公告)日：2010-07-15

申请号：US12318876

申请日：2009-01-12

Applicant: Bily Wang ,  Sung-Yi Hsiao ,  Jack Chen

Inventor： Bily Wang ,  Sung-Yi Hsiao ,  Jack Chen

IPC: H01L23/498 ,  H01L21/82

CPC classification number: H01L29/0657 ,  H01L21/6836 ,  H01L23/31 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/96 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/0107 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A wafer level vertical diode package structure includes a first semiconductor layer, a second semiconductor layer, an insulative unit, a first conductive structure, and a second conductive structure. The second semiconductor layer is connected with one surface of the first semiconductor layer. The insulative unit is disposed around a lateral side of the first semiconductor layer and a lateral side of the second semiconductor layer. The first conductive structure is formed on a top surface of the first semiconductor layer and on one lateral side of the insulative layer. The second conductive structure is formed on a top surface of the second semiconductor layer and on another opposite lateral side of the insulative layer.

Abstract translation: 晶圆级垂直二极管封装结构包括第一半导体层，第二半导体层，绝缘单元，第一导电结构和第二导电结构。 第二半导体层与第一半导体层的一个表面连接。 绝缘单元围绕第一半导体层的侧面和第二半导体层的横向侧设置。 第一导电结构形成在第一半导体层的顶表面和绝缘层的一个侧面上。 第二导电结构形成在第二半导体层的顶表面上，在绝缘层的另一个相对的侧面上。