公开(公告)号：US07718542B2

公开(公告)日：2010-05-18

申请号：US11510309

申请日：2006-08-25

申请人： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

发明人： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

摘要翻译： 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

公开(公告)号：US08500951B2

公开(公告)日：2013-08-06

申请号：US12730146

申请日：2010-03-23

申请人： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

发明人： Yunsang Kim ,  Andrew Bailey, III ,  Jack Chen

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

摘要翻译： 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体 。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

公开(公告)号：US08137501B2

公开(公告)日：2012-03-20

申请号：US11672922

申请日：2007-02-08

申请人： Yunsang Kim ,  Andrew Bailey, III ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

发明人： Yunsang Kim ,  Andrew Bailey, III ,  Greg Sexton ,  Keechan Kim ,  Andras Kuthi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/02087

摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.

摘要翻译： 提供了用于在晶片的斜面上去除材料的设备。 提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。 中心盖与晶片支撑件间隔开。 第一导电环位于晶片的第一侧并与晶片间隔开。 第二导电环与晶片间隔开。 导电衬套围绕晶片的外边缘。 开关在衬垫和接地之间，允许衬管从接地切换到浮动。

公开(公告)号：US20080185105A1

公开(公告)日：2008-08-07

申请号：US11701854

申请日：2007-02-02

申请人： Andrew D. Bailey ,  Jack Chen ,  Yunsang Kim ,  Gregory S. Sexton

发明人： Andrew D. Bailey ,  Jack Chen ,  Yunsang Kim ,  Gregory S. Sexton

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32568 ,  H01L21/68721

摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.

摘要翻译： 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片，并且电极具有第二表面。 线性驱动器安装在基座上，连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。

公开(公告)号：US20080050923A1

公开(公告)日：2008-02-28

申请号：US11510309

申请日：2006-08-25

申请人： Yunsang Kim ,  Andrew Bailey ,  Jack Chen

发明人： Yunsang Kim ,  Andrew Bailey ,  Jack Chen

IPC分类号： H01L21/461 ,  H01L21/302 ,  C03C25/68

CPC分类号： H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

摘要翻译： 提供了蚀刻基板的斜边缘的方法。 在蚀刻层上形成图案化的光致抗蚀剂掩模。 所述斜边缘被清洁，包括提供清洁气体，所述清洁气体包括CO 2，CO，C，H，H，H， > 2，NH 3，C x H，Y z和它们的组合，形成 来自清洁气体的清洁等离子体，并将斜面边缘暴露于清洁等离子体。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

公开(公告)号：US20140007901A1

公开(公告)日：2014-01-09

申请号：US13543028

申请日：2012-07-06

申请人： Jack Chen ,  Gregory Sexton ,  Yunsang Kim

发明人： Jack Chen ,  Gregory Sexton ,  Yunsang Kim

IPC分类号： B08B7/00 ,  B32B1/04

CPC分类号： H01L21/67028 ,  H01L21/67051 ,  Y10T428/218

摘要： Methods and apparatus for more efficiently cleaning a substrate having a notch in a plasma processing chamber configured for bevel edge cleaning. A notched plasma exclusion ring an inner periphery and an outer periphery is provided. The notched plasma exclusion ring has a ring notch formed at its outer periphery. The notched plasma exclusion ring has a notch apex dimension that is at least as large as a notch apex dimension of the substrate notch and a notch opening dimension that is at least as large as a notch opening dimension of the substrate notch. Methods for obtaining misalignment data and for subsequently rotate substrates to more efficiently clean the substrate notch are also disclosed.

摘要翻译： 用于更有效地清洁在等离子体处理室中具有凹口的衬底的方法和装置，其被配置用于斜面边缘清洁。 提供了一个内周边和外围的缺口等离子体排除环。 缺口等离子体排除环在其外周形成有环形凹口。 缺口等离子体排除环具有至少与基板切口的切口顶点尺寸一样大的切口顶点尺寸和至少与基板切口的切口开口尺寸一样大的切口开口尺寸。 还公开了用于获得未对准数据并随后旋转衬底以更有效地清洁衬底凹口的方法。

公开(公告)号：US20080156772A1

公开(公告)日：2008-07-03

申请号：US11618572

申请日：2006-12-29

申请人： Yunsang Kim ,  Jack Chen ,  Grace Fang ,  Andrew Bailey

发明人： Yunsang Kim ,  Jack Chen ,  Grace Fang ,  Andrew Bailey

IPC分类号： H01L21/306 ,  C23F1/02

CPC分类号： H01J37/32706 ,  H01J37/32532 ,  H01J37/32623 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67069

摘要： Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.

摘要翻译： 在等离子体斜面蚀刻期间用于补救对基板的电弧相关损伤的方法和装置。 等离子体屏蔽设置在衬底之上，以防止在两个环形接地板之间产生的等离子体到达衬底上暴露的金属化。 另外或替代地，可以采用无碳氟化处理源气体和/或在等离子体产生期间逐渐斜升RF偏置功率以减轻斜面蚀刻期间的电弧相关损伤。 另外或替代地，可以将氦和/或氢加入到工艺源气体中以减轻斜面蚀刻期间的电弧相关损伤。

公开(公告)号：US08562750B2

公开(公告)日：2013-10-22

申请号：US12640926

申请日：2009-12-17

申请人： Jack Chen ,  Yunsang Kim

发明人： Jack Chen ,  Yunsang Kim

IPC分类号： B08B7/04

CPC分类号： H01L21/02274 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/509 ,  H01L21/02087 ,  H01L21/02115 ,  H01L21/3083 ,  H01L21/31144

摘要： A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.

摘要翻译： 提供了一种用于处理斜边的方法和装置。 将衬底放置在斜面处理室中，并且使用限制在斜面处理室的周边区域中的钝化等离子体在衬底的仅一个斜面区域周围形成钝化层。 衬底可以经历随后的半导体工艺，在此期间衬底的斜边缘区域被钝化层保护。 或者，可以使用在处理室的外围区域中形成的图案化等离子体对钝化层进行图案化，通过增加等离子体限制来限制图形化等离子体。 去除斜面区域的外边缘部分上的钝化层，同时保持斜面区域的内部部分上的钝化层。 可以使用图案化的钝化层作为保护掩模来清洁基底的斜边缘。

公开(公告)号：US07575638B2

公开(公告)日：2009-08-18

申请号：US11701854

申请日：2007-02-02

申请人： Andrew D. Bailey, III ,  Jack Chen ,  Yunsang Kim ,  Gregory S. Sexton

发明人： Andrew D. Bailey, III ,  Jack Chen ,  Yunsang Kim ,  Gregory S. Sexton

IPC分类号： B05B5/025 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32568 ,  H01L21/68721

摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.

摘要翻译： 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片，并且电极具有第二表面。 线性驱动器安装在基座上，连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。

公开(公告)号：US08430970B2

公开(公告)日：2013-04-30

申请号：US12852673

申请日：2010-08-09

申请人： Ganapathy Swami ,  Peter Loewenhardt ,  Yunsang Kim

发明人： Ganapathy Swami ,  Peter Loewenhardt ,  Yunsang Kim

IPC分类号： B08B7/00 ,  B08B3/00 ,  B08B7/04

CPC分类号： C23C16/4404

摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.

摘要翻译： 根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分由环境酸性水解引起的腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。 该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。